Improvement of Routine Test Process of High Voltage Power Capacitors

The capacitor test process at ABB Capacitors in Ludvika must be improved to meet future demands for high voltage products. To find a solution to how to improve the test process, an investigation was performed to establish which parts of the process are used and how they operate. Several parts which can improves the process were identified. One of them was selected to be improved in correlation with the subject, mechanical engineering. Four concepts were generated and decision matrixes were used to systematically select the best concept. By improving the process several benefits has been added to the process. More units are able to be tested and lead time is reduced. As the lead time is reduced the cost for each unit is reduced, workers will work less hours for the same amount of tested units, future work to further improve the process is also identified. The selected concept was concept 1, the sway stop concept. This concept is used to reduce the sway of the capacitors as they have entered the test facility, the box. By improving this part of the test process a time saving of 20 seconds per unit can be achieved, equivalent to 7% time reduction. This can be compared to an additional 1400 units each year.

Low actuation-voltage shift in MEMS switch using ramp dual-pulse

This paper proposes a ramp dual-pulse actuation-voltage waveform that reduces actuation-voltage shift in capacitive microelectromechanical system (MEMS) switches. The proposed waveform as well as two reported waveforms (dual pulse, and novel dual-pulse) are analyzed using equivalent-circuit and equation models. Based on the analysis outcome, the paper provides a clear understanding of trapped charge density in the dielectric. The results show that the proposed actuation-voltage waveform successfully reduces trapped charge and increases lifetime due to lowering of actuation-voltage shift. Using the proposed actuation-voltage waveform, the membrane reaches a steady state on the electrode faster.

Accurate modeling of low actuation voltage RFMEMS switches using artificial neural networks

This paper presents a fast and accurate method for extracting the scattering parameters of a RF MEMS switch by using its essential parameters. A neural network is developed for parametric modeling of the switch. The essential parameters of the switch are analyzed in terms of its return loss and isolation with variation of its geometrical component values. Simulation results show that the proposed approach can be used to accurately model the RF characteristics of RF-MEMS switches. The results show good agreement between the neural network prediction and electromagnetic simulations.

Review of low actuation voltage RF MEMS electrostatic switches based on metallic and carbon alloys

Radio frequency micro electro mechanical systems (RF MEMS) have enabled a new generation of devices that bring many advantages due to their very high performances. There are many incentives for the integration of the RF MEMS switches and electronic devices on the same chip. However, the high actuation voltage of RF MEMS switches compared to electronic devices poses a major problem. By reducing the actuation voltage of the RF MEMS switch, it is possible to integrate it into current electronic devices. Lowering the actuation voltage will have an impact on RF parameters of the RF MEMS switches. This investigation focuses on recent progress in reducing the actuation voltage with an emphasis on a modular approach that gives acceptable design parameters. A number of rules that should be considered in design and fabrication of low actuation RF MEMS switches are suggested.

Design and analysis of a low actuation voltage electrowetting-on-dielectric device

This paper presents an Electrowetting-on-Dielectric (EWOD) device with optimized insulating layers operated by low actuation voltage. The device consists of an electrode array on a silicon substrate, covered by a dielectric layer and a hydrophobic layer. To characterize the performance of the device, simulations are performed for the dielectric layer of Sio₂ and the hydrophobic layer of Sio₂, Su-8 and Parylene C at different voltages. The volume finite difference approach of the Coventorware software was used to carry out the simulations. Two different molar of di-ionized water droplet were considered in the simulations. It was observed that the device having the Sio₂ dielectric layer and the Parylene C hydrophobic layer moved the 1M KCL (potassium chloride) droplet at the actuation voltage of 25V.

Development of a low actuation voltage electrostatic RF MEMS switch

The research focused on the design, fabrication and measurement of a low actuation voltage micro electro mechanical high frequency switch. The fabricated micro switch offers outstanding radio frequency parameters for a very large frequency band, with actuation voltage and switching time less than 20 volts and 3 micro seconds, respectively.

Voltage-composition profile and synchrotron X-ray structural analysis of low and high temperature LixCoO2 host material

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Bandgap voltage reference with low susceptibility to electromagnetic interference (EMI)

In this paper, the susceptibility of a current-mode bandgap voltage reference to electromagnetic interference (EMI) superimposed to the power supply is investigated by simulation. Designed for AMS 0.35 CMOS process, the circuit provides a stable voltage reference in the temperature range of -40-150°C. When EMI disturbances are present, the circuit exhibits only 6.7 mV of offset for interfering signals in the frequency range of 150 kHz-1 GHz. © 2011 ACM.

Resonant (P+RES) controller applied to voltage source inverter with minimum DC link capacitor

Voltage source inverters use large electrolytic capacitors in order to decouple the energy between the utility and the load, keeping the DC link voltage constant. Decreasing the capacitance reduces the distortion in the inverter input current but this also affects the load with low-order harmonics and generate disturbances at the input voltage. This paper applies the P+RES controller to solve the challenge of regulating the output current by means of controlling the magnitude of the current space vector, keeping it constant thus rejecting harmonic disturbances that would otherwise propagate to the load. This work presents a discussion of the switching and control strategy. © 2011 IEEE.

A mixed-integer LP model for the optimal allocation of voltage regulators and capacitors in radial distribution systems

This paper presents a mixed-integer linear programming model to solve the problem of allocating voltage regulators and fixed or switched capacitors (VRCs) in radial distribution systems. The use of a mixed-integer linear model guarantees convergence to optimality using existing optimization software. In the proposed model, the steady-state operation of the radial distribution system is modeled through linear expressions. The results of one test system and one real distribution system are presented in order to show the accuracy as well as the efficiency of the proposed solution technique. An heuristic to obtain the Pareto front for the multiobjective VRCs allocation problem is also presented. © 2012 Elsevier Ltd. All rights reserved.

Bancos de capacitores se corrente de Inrush

This work discusses about the effects and methods of control and elimination of the currents transients generated by switching capacitor banks, this currents are called inrush currents. Capacitor banks are widely used to compensate a low power factor generated by the widespread use of inductive loads. Currently many of these banks are automatic and therefore the capacitive cells are connected and disconnected according to the inductive loads on the network. However when connecting a capacitor bank to a bus can generate currents transients generated by electromagnetic transients. Aspects of the network, for example, the existence of a bank already connected to the bus, can influence the intensity of this phenomenon. This paper discusses some characteristics of the capacitors and the network to justify and explain the appearance of these transients and discusses its effects on the network and to other equipment. It is concluded that the main cause of this phenomenon is the voltage difference between the capacitor to be connected to the network and the bus, the results of the study were the bases to discuss the traditional methods to mitigate these currents and therefore its negative effects. Although in this paper is yet developed a method of electronic switching that can greatly reduce these transients

Thermal inkjet printing of copper tetrasulfonated phthalocyanine (CuTsPc) as a semiconducting layer on flexible MIS capacitors

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)