High-mobility Ga-polarity GaN achieved by NH3-MBE

GaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface examination. By using a RF-MBE grown GaN layer as template to deposit GaN epilayer by NH3-MBE method, we found that not only Ga-polarity GaN films were repeatedly obtained, but also the electron mobility of these Ga-polarity films was significantly improved with a best value of 290 cm(2)/V.s at room temperature. Experimental results show it is an easy and stable way for growth of high quality Ga-polarity GaN films.

Architecture research and hardware implementation on simplified neural computing system for face identification

This paper describes a special-purpose neural computing system for face identification. The system architecture and hardware implementation are introduced in detail. An algorithm based on biomimetic pattern recognition has been embedded. For the total 1200 tests for face identification, the false rejection rate is 3.7% and the false acceptance rate is 0.7%.

A method of Biomimetic Pattern Recognition for face recognition

A new method of face recognition, based on Biomimetic Pattern Recognition and Multi-Weights Neuron Network, had been proposed. A model for face recognition that is based on Biomimetic Pattern Recognition had been discussed, and a new method of facial feature extraction also had been introduced. The results of experiments with BPR and K-Nearest Neighbor Rules showed that the method based on BPR can eliminate the error recognition of the samples of the types that not be trained, the correct rate is also enhanced.

Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing

The quantum well intermixing of Ga(In)NAs/GaAs simple quantum well (SQW) using SiO2 encapsulation and rapid thermal annealing has been studied. Obvious enhanced intermixing of GaInNAs/GaAs SQW was observed due to the localized SiO2 capping layer and RTA at temperature between 650degreesC and 900degreesC. The selective intermixing strongly depends on N composition and In composition. An obvious selective intermixing had been found in the samples with small N composition and/or high In composition.

Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy

1.3 mum wavelength In(Ga)As/GaAs nanometer scale islands grown by molecular beam epitaxy (MBE) were characterized by photoluminescence (PL) and atomic force microscopy (AFM) measurements. It is shown that inhomogeneous broadening of optical emission due to fluctuation of the In0.5Ga0.5As islands both in size and in compositions can be effectively suppressed by introducing a AlAs layer and a strain reduction In0.2Ga0.8As layer overgrown on top of the islands, 1.3mum emission wavelength with narrower line-width less than 20meV at room temperature was obtained.

High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers

Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting from three dimensional quantum confinements. QD lasers can only be realized till significant improvements in uniformity of QDs with free of defects and increasing QD density as well in recent years. In this paper, we first briefly give a review on the techniques for preparing QDs, and emphasis on strain induced self-organized quantum dot growth. Secondly, self-organized In(Ga)As/GaAs, InAlAs/GaAlAs and InAs/InAlAs Qds grown on both GaAs and InP substrates with different orientations by using MBE and the Stranski-Krastanow (SK) growth mode at our labs are presented. Under optimizing the growth conditions such as growth temperature, V/III ratio, the amount of InAs, InxGa1-xAs, InxAl1-xAs coverage, the composition x etc., controlling the thickness of the strained layers, for example, just slightly larger than the critical thickness and choosing the substrate orientation or patterned substrates as well, the sheet density of ODs can reach as high as 10(11) cm(-2), and the dot size distribution is controlled to be less than 10% (see Fig. 1). Those are very important to obtain the lower threshold current density (J(th)) of the QD Laser. How to improve the dot lateral ordering and the dot vertical alignment for realizing lasing from the ground states of the QDs and further reducing the Jth Of the QD lasers are also described in detail. Thirdly based on the optimization of the band engineering design for QD laser and the structure geometry and growth conditions of QDs, a 1W continuous-wave (cw) laser operation of a single composite sheet or vertically coupled In(Ga)As quantum dots in a GaAs matrix (see Fig. 2) and a larger than 10W semiconductor laser module consisted nineteen QD laser diodes are demonstrated. The lifetime of the QD laser with an emitting wavelength around 960nm and 0.613W cw operation at room temperature is over than 3000 hrs, at this point the output power was only reduced to 0.83db. This is the best result as we know at moment. Finally the future trends and perspectives of the QD laser are also discussed.

Influence of open-tube Ga diffusion on the characteristics for thyristor

Open-tube Ga diffusion into a SiO2/Si structure was used for fabrication of the high speed thyristor. The advantages of open-tube Ga diffusion are as follows; it is easier to operate and easier to control the profile of the Ga concentration during processing, a clean surface, which is free from alloy spots can be obtained, this technique ensures to improve the on-state characteristics and dynamic characteristics.

Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC

Homoepitaxial growth of SiC on a Si-face (0 0 0 1) GH-SIC substrate has been performed in a modified gas-source molecular beam epitaxy system with Si2H6 and C2H4 at temperatures ranging 1000 1450 degreesC while keeping a constant SiC ratio (0.7) in the gas phase. X-ray diffraction patterns, Raman scattering measurements. and low-temperature photoluminescence spectra showed single-crystalline SiC. Mesa-type SiC p-n junctions were obtained on these epitaxial layers, and their I-V characteristics are presented. (C) 2001 Elsevier Science B.V. All rights reserved.

Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer

Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.

Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates

In this paper, we investigated the self-assembled quantum dots formed on (100) and (N11)B (N = 2, 3, 4, 5) InP substrates by molecular beam epitaxy (MBE). Two kinds of ternary QDs (In0.9Ga0.1As and In0.9Al0.1As QDs) are grown on the above substrates; Transmission electron microscopy (TEM) and photoluminescence (PL) results confirm QDs formation for all samples. The PL spectra reveal obvious differences in integral luminescence, peak position, full-width at half-maximum and peak shape between different oriented surfaces. Highest PL integral intensity is observed from QDs on (411)B surfaces, which shows a potential for improving the optical properties of QDs by using high-index surface. (C) 2000 Elsevier Science B.V. All rights reserved.

FACE稻田中与C、N转化相关土壤微生物的响应

利用江都市小记镇的稻-麦轮作FACE平台，在水稻生长季研究了不同施肥（施常规氮量和低氮量）、不同秸秆还田（秸秆全还田、秸秆半还田、秸秆不还田）处理土壤中的硝化、反硝化、产甲烷和甲烷氧化菌数量变化，借助气相色谱测定了土壤的反硝化潜力、产甲烷潜力和甲烷氧化潜力。并对水稻土中的硝酸还原酶、脲酶、蔗糖酶和过氧化氢酶活性及有效C、N含量也进行了研究，目的是评估FACE稻田土壤反硝化活性和甲烷产生能力。 结果表明：与对照相比，FACE稻田土中的有效N含量呈降低趋势；土壤反硝化潜势明显受到抑制；水稻生长各时期土壤反硝化菌群数量也趋于减少，这种现象在常规氮肥施用及秸秆不还田情形下表现最为显著（P<0.01）；在水稻的大多数生育期土壤中的硝酸还原酶和脲酶活性也受到抑制；总体表现为FACE稻田土壤反硝化活性受到抑制。FACE既促进土壤的甲烷产生潜力，也促进甲烷氧化能力；对产甲烷菌在分蘖期具有促进作用，而在抽穗与收获期具有抑制作用，这种作用在低氮条件下达到显著水平（P<0.05）。同样，在低氮条件下，FACE促进了水稻生长前3个时期土壤甲烷氧化菌群数量增长，仅在收获期表现为抑制作用，因而，FACE稻田甲烷产生是产甲烷和氧化综合作用的结果。

FACE对农田土壤微生物及VA菌根的影响

大气CO_2浓度升高对整个陆地生态系统产生巨大影响。微生物是土壤中重要而又活跃的组成部分，是自然界物质循环不可缺少的成员，行使着许多对陆地生命至关重要的功能。因此，了解土壤中微生物的变化，是了解整个陆地生态系统对大气CO_2浓度升高响应的关键。木文利用在江苏省无锡市建立的稻一麦轮作FACE系统研究平台，研究了CO_2浓度升高对农田土壤微生物及VA菌根的影响。结果发现在FACE条件下，土壤细菌、真菌和放线菌的数量都随着小麦和水稻的生长而发生变化，分别在小麦返青期和水稻拔节期偏大，随后均有所下降，与对照相比，CO_2浓度升高增加土壤细菌、真菌和放线菌的数量；小麦根区土壤中议菌根真菌的抱子以球囊霉属（Glomus）为优势属，以摩西球囊霉（Glomus mosseae）为优势种；在小麦拔节期和孕穗期观察到VA菌根真菌侵染，侵染率在拔节期偏高，后逐渐降低，CO_2浓度升高使小麦VA菌根侵染率增加，而在水稻根系没有观察到VA菌根真菌侵染；根系活力分别在小麦拔节期和水稻抽穗期偏高，到成熟期均降低，CO_2浓度升高使根系活力增强；小麦VA菌根侵染率与根系活力存在正相关关系。总之，大气CO_2浓度升高对农田土壤细菌、真菌和放线菌的数量、VA菌根侵染率及根系活力都表现出一定的促进作用。