970 resultados para electron beam evaporation
Resumo:
We report an experimental observation suggesting plasma channel formation by focusing a relativistic laser pulse into a long-scale-length preformed plasma. The channel direction coincides with the laser axis. Laser light transmittance measurement indicates laser channeling into the high-density plasma with relativistic self-focusing. A three-dimensional particle-in-cell simulation reproduces the plasma channel and reveals that the collimated hot-electron beam is generated along the laser axis in the laser channeling. These findings hold the promising possibility of fast heating a dense fuel plasma with a relativistic laser pulse.
Resumo:
This work is concerned with a general analysis of wave interactions in periodic structures and particularly periodic thin film dielectric waveguides.
The electromagnetic wave propagation in an asymmetric dielectric waveguide with a periodically perturbed surface is analyzed in terms of a Floquet mode solution. First order approximate analytical expressions for the space harmonics are obtained. The solution is used to analyze various applications: (1) phase matched second harmonic generation in periodically perturbed optical waveguides; (2) grating couplers and thin film filters; (3) Bragg reflection devices; (4) the calculation of the traveling wave interaction impedance for solid state and vacuum tube optical traveling wave amplifiers which utilize periodic dielectric waveguides. Some of these applications are of interest in the field of integrated optics.
A special emphasis is put on the analysis of traveling wave interaction between electrons and electromagnetic waves in various operation regimes. Interactions with a finite temperature electron beam at the collision-dominated, collisionless, and quantum regimes are analyzed in detail assuming a one-dimensional model and longitudinal coupling.
The analysis is used to examine the possibility of solid state traveling wave devices (amplifiers, modulators), and some monolithic structures of these devices are suggested, designed to operate at the submillimeter-far infrared frequency regime. The estimates of attainable traveling wave interaction gain are quite low (on the order of a few inverse centimeters). However, the possibility of attaining net gain with different materials, structures and operation condition is not ruled out.
The developed model is used to discuss the possibility and the theoretical limitations of high frequency (optical) operation of vacuum electron beam tube; and the relation to other electron-electromagnetic wave interaction effects (Smith-Purcell and Cerenkov radiation and the free electron laser) are pointed out. Finally, the case where the periodic structure is the natural crystal lattice is briefly discussed. The longitudinal component of optical space harmonics in the crystal is calculated and found to be of the order of magnitude of the macroscopic wave, and some comments are made on the possibility of coherent bremsstrahlung and distributed feedback lasers in single crystals.
Resumo:
报道了在20 TW皮秒激光器上完成的p偏振激光与等离子体相互作用过程中产生的快电子的角分布和能谱测量结果.实验得到:当激光功率密度小于1017 W/cm^2时,电子发射没有明显定向性,在激光入射面内多峰发射;当激光功率密度大于1017 W/cm^2,小于1018 W/cm^2时,电子主要沿靶面法线方向发射;当激光功率密度达到相对论强度时,电子主要沿激光传播方向发射;激光功率密度未达到相对论强度时,靶后表面法线方向快电子能谱拟合平均温度符合共振吸收温度定标率;激光功率密度达相对论强度以上时,靶后表面法线方向
Resumo:
The real and imaginary parts of third-order susceptibility of amorphous GeSe2 film were measured by the method of the femtosecond optical heterodyne detection of optical Kerr effect at 805 nm with the 80 fs ultra fast pulses. The results indicated that the values of real and imaginary parts were 8.8 x 10(-12) esu and -3.0 x 10(-12) esu, respectively. An amorphous GeSe2 film also showed a very fast response within 200 fs. The ultra fast response and large third-order non-linearity are attributed to the ultra fast distortion of the electron orbits surrounding the average positions of the nucleus of Ge and Se atoms. (c) 2005 Elsevier B.V. All rights reserved.
Resumo:
The full retarded electromagnetic force experienced by swift electrons moving parallel to planar boundaries is revisited, for both metallic and dielectric targets, with special emphasis on the consequences in electron microscopy experiments. The focus is placed on the sign of the transverse force experienced by the electron beam as a function of the impact parameter. For point probes, the force is found to be always attractive. The contribution of the induced magnetic field and the causality requirements of the target dielectric response, given by the Kramers-Kronig (K-K) relations, prove to be crucial issues at small impact parameters. For spatially extended probes, repulsive forces are predicted for close trajectories, in agreement with previous works. The force experienced by the target is also explored, with the finding that in insulators, the momentum associated to Cherenkov radiation (CR) is relevant at large impact parameters.
Resumo:
用脉冲电子束激发测量了不同Yb^3+掺杂浓度的Yb:YAG晶体的红外(IR)闪烁发光性能。Yb:YAG晶体的IR闪烁发光具有高的光产额和长的衰减时间,但存在浓度猝灭效应和温度依赖关系。Yb:YAG晶体的IR闪烁性能还与晶体品质有关,相同掺杂浓度的Yb:YAG晶体,品质优异的会获得更高的光产额。这一初步的研究成果表明,部分掺Yb^3+晶体有可能用于医学成像装置。
Resumo:
Laser conditioning effects of the HfO2/SiO2 antireflective (AR) coatings at 1064 nm and the accumulation effects of multishot laser radiation were investigated. The HfO2/SiO2 AR coatings were prepared by E-beam evaporation (EBE). The singleshot and multi-shot laser induced damage threshold was detected following ISO standard 11254-1.2, and the laser conditioning was conducted by three-step raster scanning method. It was found that the single-shot LIDT and multi-shot LIDT was almost the same. The damage mostly > 80% occurred in the first shot under multi-shot laser radiation, and after that the damage occurring probability plummeted to < 5%. There was no obvious enhancement of the laser damage resistance for both the single-shot and multi-shot laser radiation of the AR coatings after laser conditioning. A Nomarski microscope was employed to map the damage morphology, and it found that the damage behavior is defect-initiated for both unconditioned and conditioned samples. © 2004 Elsevier B.V. All rights reserved.
Resumo:
利用电子束热蒸发方法在K9玻璃基底上沉积氧化锆薄膜,并对其中一些样品用低能O2^+进行了后处理.采用表面热透镜技术测量薄膜样品表面弱吸收,采用显微镜观察样品离子后处理前后的显微缺陷密度.测试结果表明:经离子后处理样品表面的缺陷密度从18.6/mm^2降低到6.2/mm^2,且其激光损伤阈值从15.9 J/cm^2提高到23.1 J/cm^2,样品的平均吸收率从处理前的1.147×10^-4降低到处理后的9.56×10^-5.通过对处理前后样品的表面微缺陷密度、吸收率及损伤形貌等的分析发现:离子后处理可以降
Resumo:
Laser induced damage threshold (LIDT) of multi-layer dielectric used in pulse compressor gratings (PCG) was investigated. The sample was prepared by e-beam evaporation (EBE). LIDT was detected following ISO standard 11254-1.2. It was found that LIDTs of normal and 51.2 deg. incidence (transverse electric (TE) mode) were 14.14 and 9.31 J/cm2, respectively. A Nomarski microscope was employed to map the damage morphology, and it was found that the damage behavior was pit-concave-plat structure for normal incidence, while it was pit structure for 51.2 deg. incidence with TE mode. The electric field distribution was calculated to illuminate the difference of LIDT between the two incident cases.
Resumo:
Some results of an investigation on the layer thickness uniformity of glancing angle deposition are presented. A zirconia monolayer has been deposited by glancing angle deposition to analyze the layer thickness uniformity. The experimental results indicate that the thickness variation over the substrate is less than 0. 1%, which is considered as good uniformity. It is found that the non-uniformity of experimental results is larger than that of the theoretical results. (c) 2005 Elsevier Ltd. All rights reserved.
Resumo:
用电子束热蒸发方法镀制了Al2O3材料的单层膜,对它们在空气中进行了250~400℃的高温退火。对样品的透射率光谱曲线进行了测量,计算了样品的消光系数、折射率和截止波长。通过X射线衍射仪(XRD)测量分析了薄膜的微观结构,采用表面轮廓仪测量了样品的表面均方根粗糙度。结果发现随着退火温度的提高光学损耗下降,薄膜结构在退火温度为400℃时仍然为无定形态,样品的表面粗糙度随退火温度的升高而增加。引起光学损耗下降起主导作用的是吸收而不是散射,吸收损耗的下降主要是由于退火使材料吸收空气中的氧而进一步氧化,从而使薄膜
Resumo:
The high reflection (HR) mirror composed of dielectric stacks with excellent spectrum characteristics and high damage resistant ability is critical for fabricating multilayer dielectric (MLD) grating for pulse compressor. The selection of the SiO2 material as the top layer of the HR mirror for grating fabrication is beneficial for improving the laser-induced damage threshold of MLD grating as well as minimizing the standing-wave effect in the photoresist during the exposure process. Based on an (HLL) H-9 design comprising quarter-waves of HfO2 ( H) and half-waves of SiO2 ( L), we obtain an optimal design of the HR mirror for MLD grating, the SiO2 top layer of which is optimized with a merit function including both the diffraction efficiency of the MLD grating and the electric field enhancement in the grating. Dependence of the performance of the MLD grating on the fabrication error of the dielectric mirror is analysed in detail. The HR mirror is also fabricated by E-beam evaporation, which shows good spectral characteristics at the exposure wavelength of 413 nm and at the operation wavelength of 1053 nm and an average damage threshold of 10 J cm(-2) for a 12 ns pulse.
Resumo:
Thin-film design used to fabricate multi-layer dielectric (MLD) gratings should provide high transmittance during holography exposure, high reflectance at use wavelength and sufficient manufacturing latitude of the grating design making the MLD grating achieve both high diffraction efficiency and low electric field enhancement. Based on a (HLL)H-9 design comprising of quarter-waves of high-index material and half-waves of low-index material, we obtain an optimum MLD coating meeting these requirements by inserting a matching layer being half a quarter-wave of Al2O3 between the initial design and an optimized HfO2 top layer. The optimized MLD coatings exhibits a low reflectance of 0.017% under photoresist at the exposure angle of 17.8 degrees for 413 nm light and a high reflectance of 99.61% under air at the use angle of 51.2 degrees for 1053 nm light. Numerical calculation of intensity distribution in the photoresist coated on the MLD film during exposure shows that standing-wave patterns are greatly minimized and thus simulation profile of photoresist gratings after development demonstrates smoother shapes with lower roughness. Furthermore, a MLD gratings with grooves etched into the top layer of this MLD coating provides a high diffraction efficiency of 99.5% and a low electric field enhancement ratio of 1.53. This thin-film design shows perfect performances and can be easily fabricated by e-beam evaporation. (c) 2006 Elsevier B.V. All rights reserved.
Resumo:
The mechanism of improving 1064 nm, 12 ns laser-induced damage threshold (LIDT) of TiO2/SiO2 high reflectors (HR) prepared by electronic beam evaporation from 5.1 to 13.1 J/cm(2) by thermal annealing is discussed. Through optical properties, structure and chemical composition analysis, it is found that the reduced atomic non-stoichiometric defects are the main reason of absorption decrease and LIDT rise after annealing. A remarkable increase of LIDT is found at 300 degrees C annealing. The refractive index and film inhomogeneity rise, physical thickness decrease, and film stress changes from compress stress to tensile stress due to the structure change during annealing. (c) 2007 Elsevier B.V. All rights reserved.