Electronic structure and optical signatures of semiconducting transition metal dichalcogenide nanosheets

CONSPECTUS: Two-dimensional (2D) crystals derived from transition metal dichalcogenides (TMDs) are intriguing materials that offer a unique platform to study fundamental physical phenomena as well as to explore development of novel devices. Semiconducting group 6 TMDs such as MoS2 and WSe2 are known for their large optical absorption coefficient and their potential for high efficiency photovoltaics and photodetectors. Monolayer sheets of these compounds are flexible, stretchable, and soft semiconductors with a direct band gap in contrast to their well-known bulk crystals that are rigid and hard indirect gap semiconductors. Recent intense research has been motivated by the distinct electrical, optical, and mechanical properties of these TMD crystals in the ultimate thickness regime. As a semiconductor with a band gap in the visible to near-IR frequencies, these 2D MX2 materials (M = Mo, W; X = S, Se) exhibit distinct excitonic absorption and emission features. In this Account, we discuss how optical spectroscopy of these materials allows investigation of their electronic properties and the relaxation dynamics of excitons. We first discuss the basic electronic structure of 2D TMDs highlighting the key features of the dispersion relation. With the help of theoretical calculations, we further discuss how photoluminescence energy of direct and indirect excitons provide a guide to understanding the evolution of the electronic structure as a function of the number of layers. We also highlight the behavior of the two competing conduction valleys and their role in the optical processes. Intercalation of group 6 TMDs by alkali metals results in the structural phase transformation with corresponding semiconductor-to-metal transition. Monolayer TMDs obtained by intercalation-assisted exfoliation retains the metastable metallic phase. Mild annealing, however, destabilizes the metastable phase and gradually restores the original semiconducting phase. Interestingly, the semiconducting 2H phase, metallic 1T phase, and a charge-density-wave-like 1T' phase can coexist within a single crystalline monolayer sheet. We further discuss the electronic properties of the restacked films of chemically exfoliated MoS2. Finally, we focus on the strong optical absorption and related exciton relaxation in monolayer and bilayer MX2. Monolayer MX2 absorbs as much as 30% of incident photons in the blue region of the visible light despite being atomically thin. This giant absorption is attributed to nesting of the conduction and valence bands, which leads to diversion of optical conductivity. We describe how the relaxation pathway of excitons depends strongly on the excitation energy. Excitation at the band nesting region is of unique significance because it leads to relaxation of electrons and holes with opposite momentum and spontaneous formation of indirect excitons.

Degradação fotocatalítica de petróleo e seus derivados através da utilização de nanopartículas de dióxido de titânio puro e misturado com óxido de grafeno reduzido

Dissertação de mestrado integrado em Engenharia de Materiais

Electroquímica de sustancias orgánicas, mecanismos y electrosíntesis: Producción y aplicación de electrodos modificados

En este trabajo se trata de elucidar los procesos de oxidación-reducción electroquímica de compuestos orgánico aromáticos. Interesan los productos de reacción y el manejo de las variables externas para lograr la optimización de los que sean de interés. Estos estudios se realizan en medios homogéneos y además en medios bifásicos. Así se estudian procesos de electrodos con sustancias orgánicas en sistemas bifásicos líquido-líquido. Interesan conocer los mecanismos de fotoelectroquímica de moléculas biomiméticas tales como carotenos y porfirinas, principalmente en lo referente a la producción de fotocorriente. También se estudian procesos relacionados a la preparación y obtención de electrodos modificados por sustancias orgánicas poliméricas y electrodos sensores como los de metal-óxido y polímero orgánico-metal polidisperso. Objetivos generales y específicos: Los estudios electroquímicos con sustancias orgánicas comprenden una amplia gama de posibilidades. En este proyecto se estudian procesos de electrodo de diversas sustancias orgánicas donde se trata de dilucidar los mecanismos de los procesos redox en general. En lo particular se estudia el comportamiento electroquímico y fotoelectroquímico de sustancias biomiméticas como son los compuestos carotenoides y porfirinas. Interesa fundamentalmente la producción de fotocorriente obtenidas a través de la fotoexcitación. Se propone analizar la sensibilización de semiconductores (SnO2) por medio de moléculas biomiméticas. Estas últimas actúan como aceptor primario de energía radiante y transfieren un hueco o un electrón desde el estado excitado a las bandas de energía del semiconductor base. También se estudian procesos relacionados con la preparación y obtención de electrodos modificados por sustancias orgánicas poliméricas. En este laboratorio ya se han obtenido varios tipos de polímeros y en este proyecto se propone someterlos a condiciones extremas de potencial y a medios agresivos a fin de determinar este tipo de propiedades. Una de las aplicaciones inmediatas de estos electrodos es utilizarlos como sensores electroquímicos para diversas sustancias orgánicas. Por otro lado se estudian procesos electroquímicos en interfaces líquido/ líquido, pseudofaces (micelas) además de medios homogéneos. Como reacción modelo se utiliza nitración de naftaleno.

MOVPE growth and characterisation of ZnO properties for optoelectronic applications

ZnO, Epitaxy, Metal organic vapor phase epitaxy, MOCVD, CVD, Semiconductor, Optoelectronics, X-ray diffraction, Cathodoluminescence, Microelectronics

Model analític de les característiques DC de transistors de doble porta

En aquest treball s’implementa un model analític de les característiques DC del MOSFET de doble porta (DG-MOSFET), basat en la solució de l’equació de Poisson i en la teoria de deriva-difussió[1]. El MOSFET de doble porta asimètric presenta una gran flexibilitat en el disseny de la tensió llindar i del corrent OFF. El model analític reprodueix les característiques DC del DG-MOSFET de canal llarg i és la base per construir models circuitals tipus SPICE.

Métodos de extracción de parámetros de un circuito equivalente de pequeña señal para transistores LDMOS de potencia para aplicaciones de RF

En la actualidad, la gran cantidad de aplicaciones que surgen dentro del ámbito de la radiofrecuencia hacen que el desarrollo de dispositivos dentro de este campo sea constante. Estos dispositivos cada vez requieren mayor potencia para frecuencias de trabajo elevadas, lo que sugiere abrir vías de investigación sobre dispositivos de potencia que ofrezcan los resultados deseados para altas frecuencias de operación (GHz). Dentro de este ámbito, el objetivo principal de este proyecto es el de realizar un estudio sobre este tipo de dispositivos, siendo el transistor LDMOS el candidato elegido para tal efecto, debido a su buen comportamiento en frecuencia para tensiones elevadas de funcionamiento.

Control de instrumentos mediante el bus GPIB programado con MATLAB

El proyecto que se expone a continuación está dedicado al control de instrumentos mediante el bus de instrumentación GPIB programado con el software Matlab. Está dividido en dos partes. La primera, será llevada a cabo en el laboratorio de docencia y el objetivo será controlar el osciloscopio y el generador de funciones. Como ejemplo del control realizado se desarrollará una aplicación que permitirá obtener el diagrama de Bode de módulo de cualquier sistema electrónico. La segunda parte será llevada a cabo en el laboratorio de investigación y el objetivo será controlar el analizador de semiconductores. En este caso, la aplicación desarrollada permitirá la realización de medidas para la caracterización de transistores. Las aplicaciones de ambas partes estarán realizadas mediante una interfaz gráfica de usuario diseñada con la herramienta GUIDE de Matlab.

Studying nanotoxic effects of CdTe quantum dots in Trypanosoma cruzi

Semiconductor nanoparticles, such as quantum dots (QDs), were used to carry out experiments in vivo and ex vivo with Trypanosoma cruzi. However, questions have been raised regarding the nanotoxicity of QDs in living cells, microorganisms, tissues and whole animals. The objective of this paper was to conduct a QD nanotoxicity study on living T. cruzi protozoa using analytical methods. This was accomplished using in vitro experiments to test the interference of the QDs on parasite development, morphology and viability. Our results show that after 72 h, a 200 μM cadmium telluride (CdTe) QD solution induced important morphological alterations in T. cruzi, such as DNA damage, plasma membrane blebbing and mitochondrial swelling. Flow cytometry assays showed no damage to the plasma membrane when incubated with 200 μM CdTe QDs for up to 72 h (propidium iodide cells), giving no evidence of classical necrosis. Parasites incubated with 2 μM CdTe QDs still proliferated after seven days. In summary, a low concentration of CdTe QDs (2 μM) is optimal for bioimaging, whereas a high concentration (200 μM CdTe) could be toxic to cells. Taken together, our data indicate that 2 μM QD can be used for the successful long-term study of the parasite-vector interaction in real time.

The joint R&D project: The case of the first Brazilian microcontroller chip

ABSTRACT The interorganizational cooperation, through joint efforts with various actors, allows the high-tech companies to complement resources, especially in R&D projects. Collaborative projects have been identified in many studies as an important strategy to produce complex products and services in uncertain and competitive environments. Thus, this research aims at deepening the understanding of how the development dynamics of a collaborative R&D project in an industry of high technology occur. In order to achieve the proposed objective, the R&D project of the first microcontroller in the Brazilian semiconductor industry was defined as the object of analysis. The empirical choice is justified by the uniqueness of the case, besides bringing a diversity of actors and a level of complementarity of resources that were significant to the success of the project. Given the motivation to know who the actors were and what the main forms of interorganizational coordination were used in this project, interviews were carried out and a questionnaire was also made, besides other documents related to the project. The results presented show a network of nine actors and their roles in the interorganizational collaboration process, as well as the forms of social and temporal overlapping, used in the coordination of collective efforts. Focusing on the mechanisms of temporal and social integration highlighted throughout the study, the inclusion of R&D projects in the typology for interorganizational projects is proposed in this paper, which was also proposed by Jones and Lichtenstein (2008).

Acoustic transport of charge and spins in GaAs-based heterostructures

Report for the scientific sojourn carried out at the Paul Drude Institut für Festkörperelektronik of the Stanford University, USA, from 2010 to 2012. The objective of this project is the transport and control of electronic charge and spin along GaAs-based semiconductor heterostructures. The electronic transport has been achieved by taking advantage of the piezolectric field induced by surface acoustic waves in non-centrosymmetric materials like GaAs. This piezolectric field separates photogenerated electrons and holes at different positions along the acoustic wave, where they acummulate and are transported at the same velocity as the wave. Two different kinds of structures have been studied: quantum wells grown along the (110) direction, both intrinsic and n-doped, as well as GaAs nanowires. The analysis of the charge acoustic transport was performed by micro-photoluminescence, whereas the detection of the spin transport was done either by analyzing the polarization state of the emitted photoluminescence or by Kerr reflectometry. Our results in GaAs quantum wells show that charge and spin transport is clearly observed at the non-doped structures,obtaining spin lifetimes of the order of several nanoseconds, whereas no acoutically induced spin transport was detected for the n-doped quantum wells. In the GaAs nanowires, we were able of transporting successfully both electrons and holes along the nanowire axis, but no conservation of the spin polarization has been observed until now. The photoluminescence emitted by these structures after acoustic transport, however, shows anti-bunching characteristics, making this system a very good candidate for its use as single photon emitters.

Análise do Desempenho de Amplificadores Ópticos Semiconductores Reflectivos em Redes Ópticas de Acesso da Próxima Geração

O constante crescimento de aplicações Internet têm vindo a contribuir para a necessidade do aumento de largura de banda na rede de acesso, o que fomenta a procura de novas soluções para redes de acesso de fibra óptica. Nesse contexto, soluções conhecidas como transmissores independentes do comprimento de onda (WIT wavelengthindependent transmitters) isto é, soluções para emissores que possam operar numa ampla gama de comprimentos de onda, poderão ser muito úteis. Sendo uma das mais promissoras o amplificador óptico semiconductor reflectivo (RSOA). Nesta dissertação foi implementado um modelo simplificado do RSOA que permite eficientemente determinar as suas características estáticas e dinâmicas. Foi também implementado um modelo de simulação, em Matlab, que permita estudar o desempenho de um sistema de comunicação por fibra óptica que utiliza RSOA e técnicas de modulação digital por desvio de fase com M estados (M-PSK M-ary Phase Shift Keying). Com o modelo de simulação foi avaliada qual a taxa de transmissão máxima atingível. A avaliação do desempenho foi feita através do cálculo da magnitude do vector erro (EVM Error Vector Magnitude), considerando os vários blocos implementados. Foi determinado o ponto óptimo de funcionamento do RSOA, sendo também avaliado do desempenho de sistema de transmissão, usando diferentes parâmetros do sinal M-PSK (M=4,16,64) com taxa de transmissão de 1Gbits/s e 10 Gbits/s considerando vários comprimentos de fibra óptica.

Surface states in template synthesized tin oxide nanoparticles

Tin-oxide nanoparticles with controlled narrow size distributions are synthesized while physically encapsulated inside silica mesoporous templates. By means of ultraviolet-visible spectroscopy, a redshift of the optical absorbance edge is observed. Photoluminescence measurements corroborate the existence of an optical transition at 3.2 eV. The associated band of states in the semiconductor gap is present even on template-synthesized nanopowders calcined at 800°C, which contrasts with the evolution of the gap states measured on materials obtained by other methods. The gap states are thus considered to be surface localized, disappearing with surface faceting or being hidden by the surface-to-bulk ratio decrease.

Shot-noise suppression in Schottky barrier diodes

We give a theoretical interpretation of the noise properties of Schottky barrier diodes based on the role played by the long range Coulomb interaction. We show that at low bias Schottky diodes display shot noise because the presence of the depletion layer makes the effects of the Coulomb interaction negligible on the current fluctuations. When the device passes from barrier to flat band conditions, the Coulomb interaction becomes active, thus introducing correlation between different current fluctuations. Therefore, the crossover between shot and thermal noise represents the suppression due to long range Coulomb interaction of the otherwise full shot noise. Similar ideas can be used to interpret the noise properties of other semiconductor devices.