Shot-noise suppression in Schottky barrier diodes


Autoria(s): Gomila Lluch, Gabriel; Reggiani, L. (Lino), 1941-; Rubí Capaceti, José Miguel
Contribuinte(s)

Universitat de Barcelona

Data(s)

03/05/2012

Resumo

We give a theoretical interpretation of the noise properties of Schottky barrier diodes based on the role played by the long range Coulomb interaction. We show that at low bias Schottky diodes display shot noise because the presence of the depletion layer makes the effects of the Coulomb interaction negligible on the current fluctuations. When the device passes from barrier to flat band conditions, the Coulomb interaction becomes active, thus introducing correlation between different current fluctuations. Therefore, the crossover between shot and thermal noise represents the suppression due to long range Coulomb interaction of the otherwise full shot noise. Similar ideas can be used to interpret the noise properties of other semiconductor devices.

Identificador

http://hdl.handle.net/2445/24825

Idioma(s)

eng

Publicador

American Institute of Physics

Direitos

(c) American Institute of Physics, 2000

info:eu-repo/semantics/openAccess

Palavras-Chave #Microelectrònica #Matèria condensada #Microelectronics #Condensed matter
Tipo

info:eu-repo/semantics/article