Dielectric thermal analysis as a tool for quantitative-evaluation of the viscosity and the kinetics of epoxy resin cure

Dielectric thermal analysis has been proved as a valuable tool for monitoring the epoxy curing process and the related rheological properties in the fabrication of polymer-matrix composite materials. This technique also has the potential to be applied in the monitoring of magnet impregnation processes as well as in quality control. In this work we present the quantitative evaluation of the viscosity changing and the curing kinetics for a commercial Stycast epoxy resin system at different temperatures through the impedance analysis. The results showed correlation between the real component of the complex impedance and the isothermal reaction extent. Comparing the dielectric analysis result with the viscosity measured by rotational rheometer we observed a similar behavior reported for dynamic mechanic analysis. The results comparison have shown that the kinetics parameters obtained from DSC and DETA analysis showed different sensitivities related to the characteristics of curing stages. We concluded that the dielectric thermal analysis should be applied in quantitative evaluation of cure kinetics.

Plasma polymerized hexamethyldisiloxane: Discharge and film studies

Films were grown in hexamethyldisiloxane (HMDS)-argon mixtures in a diode sputtering system with a gold cathode. Quantitative optical emission spectroscopy (OES)-actinometry revealed that the electron density or mean electron energy (or both) increased with increasing Ar concentrations in the gas feed. Increasing concentrations of Ar produced greater sputtering of the cathode and hence greater plasma A u concentrations. Fragmentation of the HMDS molecule resulted in species such as CH, Fl, and Si which were detected by OES. Film deposition rate, as determined by optical interferometry, was found to be increased by the inclusion of Ar in the gas feed. Transmission electron microscopy revealed particles, probably of Au, embedded in the polymer films. Actinometric measurements of Au in the discharge and electron probe microscopy of the deposited material showed that film Au concentrations increase with increasing concentrations of Au in the plasma. A relatively low fragmentation of HMDS molecules in the de plasma was revealed by the very small Si-HIR absorption band which is usually prominent in spectra of plasma polymerized HMDS films.

Electrochemical impedance spectroscopy characterization of passive film formed on implant Ti-6Al-7Nb alloy in Hank's solution

The influence of potential on electrochemical behavior of Ti-6Al-7Nb alloy under simulate physiological conditions was investigated by electrochemical impedance spectroscopy (EIS). The experimental results were compared with those obtained by potentiodynamic polarization curves. All measurements were carried out in Hank's aerated solution at 25degreesC, at pH 7.8 and at different potentials (corrosion potential, 0 mV(SCE), 1000 mV(SCE), and 2000 mV(SCE)). The EIS spectra exhibited a two-step or a two-time constant system, suggesting the formation of a two-layer oxide film on the metal surface. The high corrosion resistance, displayed by this alloy in electrochemical polarization tests, is due to the dense inner layer, while its osseointegration ability can be ascribed to the presence of the outer porous layer. (C) 2004 Kluwer Academic Publishers.

Anodic oxidation of formaldehyde on Pt-modified SnO2 thin film electrodes prepared by a sol-gel method

Pt-modified SnO2 electrodes were prepared onto titanium substrates in the form of thin films of similar to2 mum at different temperatures in the range from 200 to 400degreesC. Surface morphology was examined by scanning electron microscopy (SEM). It was found that Pt-SnO2 sol-gel layers are significantly rough and have a low porosity. X-ray diffraction (XRD) studies showed that the films consist of Pt nanoparticles with average size varying from about 5 to 10 nm, depending on the preparation temperature, and amorphous tin oxide. X-ray photoelectron spectroscopy (XPS) was employed to determine the superficial composition of the electrodes and demonstrated the presence of Sn4+ in all the samples. XPS spectra of the Pt 4f electrons showed the presence of Pt in the zero-valence state as well as in ionic forms. The general electrochemical behavior was characterized by cyclic voltammetry in 1 mol l(-1) HClO4 and the electrocatalytic activity towards the oxidation of formaldehyde was investigated by potential sweeps and chronoamperometry. The results obtained show that the Pt-SnO2/Ti system exhibits a significant catalytic activity for the oxidation of formaldehyde, with an onset potential below 0.1 V. (C) 2004 Elsevier Ltd. All rights reserved.

Separation of dielectric and space charge polarizations in CaCu3Ti4O12/CaTiO3 composite polycrystalline systems

The complex analysis of dielectric/capacitance is a very useful approach to separate different polarization contributions existing in polycrystalline ceramics. In this letter, the authors use this type of spectroscopic analysis to separate the bulk's dielectric dipolar relaxation contributions from the polarization contribution due to space charge in the grain boundaries of a CaCu3Ti4O12/CaTiO3 polycrystalline composite system. The bulk dielectric dipolar relaxation was attributed to the self-intertwined domain structures from the CaCu3Ti4O12 phase coupled to the dipole relaxation from the CaTiO3 phase, while the space charge relaxation was attributed to the Schottky-type potential barrier responsible for the highly non-Ohmic properties observed in this composite polycrystalline system.

Microstructure and electrical properties of perovskite (Pb, La)TiO3 thin film deposited at low temperature by the polymeric precursor method

High-quality (Pb, La)TiO3 ferroelectric thin films were successfully prepared on a Pt(111)/Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. The X-ray diffraction patterns show that the films are polycrystalline in nature. This method allows for low temperature (500 degrees C) synthesis, a high quality microstructure and superior dielectric properties. The effects on the microstructure and electrical properties were studied by changing the La content. The films annealed at 500 degreesC have a single perovskite phase with only a tetragonal or pseudocubic structure. As the La content is increased, the dielectric constant of PLT thin films increases from 570 up to 1138 at room temperature. The C-V and P-E characteristics of perovskite thin films prepared at a low temperature show normal ferroelectric behavior, representing the ferroelectric switching property. The remanent polarization and coercive field of the films deposited decreased due to the transformation from the ferroelectric to the paraelectric phase with an increased La content. (C) 2001 Kluwer Academic Publishers.

Dielectric and fatigue properties of Pb(Zr0.53Ti0.47)O-3 thin films prepared from oxide precursors method

Fatigue is an important problem to be considered if a ferroelectric film is used for non-volatile memory devices. In this phenomena, the remanent polarization and coercive field properties degrades in cycles which increase in hysteresis loops. The reasons have been attributed to different mechanisms such as a large voltage applied on ferroelectric film in every reading process in Ferroelectric Random Access Memory (FeRAM) or memories for digital storage in computer, grain size effects and others. The aim of this work is to investigate the influence of the crystallization kinetics on dielectric and ferroelectric properties of the Pb(Zr0.53Ti0.47)O-3 thin films prepared by an alternative chemical method. Films were crystallized in air on Pt/Ti/SiO2/Si substrates at 700 degrees C for 1 hour, in conventional thermal annealing (CTA), and at 700 degrees C for 1 min and 700 degrees C 5 min, using a rapid thermal annealing (RTA) process. Final films were crack free and presented an average of 750 nm in thickness. Dielectric properties were studied in the frequency range of 100 Hz - 1 MHz. All films showed a dielectric dispersion at low frequency. Ferroelectric properties were measured from hysteresis loops at 10 kHz. The obtained remanent polarization (P-r) and coercive field (E-c) were 3.7 mu C/cm(2) and 71.9 kV/cm respectively for film crystallized by CTA while in films crystallized by RTA these parameters were essentially the same. In the fatigue process, the P, value decreased to 14% from the initial value after 1.3 x 10(9) switching cycles, for film by CTA, while for film crystallized by RTA for 5 min, P, decreased to 47% from initial value after 1.7 x 10(9) switching cycles.

Photoexpansion and photobleaching effects in oxysulfide thin films of the GeS2+Ga2O3 system

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Solid-state reactions of mercury with pure noble metals - Part 2. Mercury-iridium system

Thermogravimetry, cyclic voltammetry and other analytical techniques were used to study the reactions of mercury with pure iridium. The results allowed to suggest when subjected to heat or anodic stripping voltammetry an electrodeposited mercury film reacts with Ir substrate and at least three mass loss steps and three peaks appear in the mercury desorption process. The first two were attributed to Hg(0) species removal like a mercury bulk and a mercury monolayer. The last can be ascribed to the mercury removal from a solid solution with iridium.

Crystallographic, dielectric and optical properties of SrBi2Ta2O9 thin films prepared by the polymeric precursor method

Strontium bismuth tantalate thin films were prepared on several substrates (platinized silicon (PvTi/SiO2/Si), n-type (100)-oriented and p-type (111)-oriented silicon wafers, and fused silica) by the solution deposition method. The resin was obtained by the polymeric precursor method, based on the Pechini process, using strontium carbonate, bismuth oxide, and tantalum ethoxide as starting reagents. Characterizations by XRD and SEM were performed for structural and microstructural evaluations. The electrical measurements, carried on the MFM configuration, showed P-r values of 6.24 muC/cm(2) and 31.5 kV/cm for the film annealed at 800 degreesC. The film deposited onto fused silica and treated at 700 degreesC presented around 80 % of transmittance.

Dielectric properties of pure and lanthanum modified bismuth titanate thin films

We investigated the dielectric properties of pure and lanthanum modified bismuth titanate thin films obtained by the polymeric precursor method. X-ray diffraction of the film annealed at 300 degrees C for 2h indicates a disordered structure. Lanthanum addition increases gradually the dielectric permittivity of films, keeping unchanged their loss tangent. From C-V curve we can see no hysteresis behavior indicating the absence of domain structure. The decrease in the conductivity for the heavily doped Bi4Ti3O12 (BIT) must be associated to the unidentified crystal defects. For comparison, dielectric properties of crystalline BIT film were also investigated. (C) 2007 Published by Elsevier B.V.

Dielectric properties of soft chemical method derived CaCu3Ti4O12 thin films onto Pt/TiO2/Si(100) substrates

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Structural, dielectric and ferroelectric properties of Nb-doped PZT thin films produced by oxide precursor method

Recently, was proposed a chemical method for preparation of ferroelectric thin films based on oxide precursors. In this work, PZT thin films were prepared to attest the viability of this method for cation-substitution. In this study, a small concentration of Nb (5 mol%) was selected as substitute of B-site in ABO 3 structure of PZT. Dielectric and ferroelectric properties of PZT films were studied as a function of cation-substitution. Results for Nb-PZT were compared with PZT films undoped. The values of dielectric constant, at typical 100 kHz frequency, were 358 and 137, for PZT and Nb-PZT films respectively. Remanent polarizations of these films were respectively 7.33 μ C/cm 2 and 13.3 μ C/cm 2 , while the measured coercive fields were 101 kV/cm and 93 kV/cm. As a result, changes on observed dielectric and ferroelectric values confirm the Nb substitution in PZT thin film produced by oxide precursor method. © 2002 Taylor & Francis.

Crystallographic, dielectric and optical properties of SrBi 2Ta2O9 thin films prepared by the polymeric precursor method

Strontium bismuth tantalate thin films were prepared on several substrates (platinized silicon (Pt/Ti/SiO 2 /Si), n -type (100)-oriented and p -type (111)-oriented silicon wafers, and fused silica) by the solution deposition method. The resin was obtained by the polymeric precursor method, based on the Pechini process, using strontium carbonate, bismuth oxide, and tantalum ethoxide as starting reagents. Characterizations by XRD and SEM were performed for structural and microstructural evaluations. The electrical measurements, carried on the MFM configuration, showed P r values of 6.24 μC/cm 2 and 31.5 kV/cm for the film annealed at 800 C. The film deposited onto fused silica and treated at 700 C presented around 80% of transmittance. © 2002 Taylor & Francis.

The influence of the sintering system on PMN properties

PMN powder samples with PbO excess of 0, 1,2 and 3% were submitted to the pressing and sintering at 1200°C for 4h with a heating rate of 3°C/min. A new sintering system, developed at our laboratories, was used. It allows obtaining more information on the sintering process. The sintered samples in the new system were compared to sintered samples in the C system. The microstructure, dielectric properties and the effect of the PbO excess in different sintering systems were compared. The N system permitted to obtain a ceramic with better properties, such density, dielectric constant and very homogeneous microstructure.