Metal-organic chemical vapor-deposited cobalt oxide films as negative electrodes for thin film Li-ion battery

In this study, thin films of cobalt oxide (Co3O4) have been grown by the metal-organic chemical vapor deposition (MOCVD) technique on stainless steel substrate at two preferred temperatures (450 degrees C and 500 degrees C), using cobalt acetylacetonate dihydrate as precursor. Spherical as well as columnar microstructures of Co3O4 have been observed under controlled growth conditions. Further investigations reveal these films are phase-pure, well crystallized and carbon-free. High-resolution TEM analysis confirms that each columnar structure is a continuous stack of minute crystals. Comparative study between these Co3O4 films grown at 450 degrees C and 500 degrees C has been carried out for their application as negative electrodes in Li-ion batteries. Our method of electrode fabrication leads to a coating of active material directly on current collector without any use of external additives. A high specific capacity of 1168 micro Ah cm(-2) mu m(-1) has been measured reproducibly for the film deposited at 500 degrees C with columnar morphology. Further, high rate capability is observed when cycled at different current densities. The Co3O4 electrode with columnar structure has a specific capacity 38% higher than the electrode with spherical microstructure (grown at 450 degrees C). Impedance measurements on the Co3O4 electrode grown at 500 degrees C also carried out to study the kinetics of the electrode process. (C) 2014 Published by Elsevier B.V.

Solution combustion synthesis, structure and luminescence of Y3Al5O12 : Tb3+ phosphors

The synthesis and optical properties of Y3Al5O12:Tb3+ phosphors are reported in this paper. Y3Al5O12:Tb3+ phosphors were synthesized by a facile solution combustion method. Citric acid traps the constituent cations and also acts as a fuel. Y3Al5O12 (YAG) phase can crystallize through sintering at 900 degrees C for 2 h, and there were no intermediate phases such as YAlO3 (YAP) and Y4Al2O9 (YAM) in the sintering process. The excitation spectra of crystalline Y3Al5O12:Tb3+ are different from that of amorphous one due to the crystal field effect. The emission spectra mainly show D-5(4) -> F-7(6) transition under UV excitation. The higher concentration quenching in Y3Al5O12:Tb3+ nanophosphors may be due to the confinement effect on resonant energy transfer of nanocrystalline. It is also indicated that the solution combustion synthesis method provides a good distribution of Tb3+ activators in Y3Al5O12 host. (c) 2005 Published by Elsevier B.V.

Smart chemical sensor application of ZnO nanowires grown on CMOS compatible SOI microheater platform

Smart chemical sensor based on CMOS(complementary metal-oxide- semiconductor) compatible SOI(silicon on insulator) microheater platform was realized by facilitating ZnO nanowires growth on the small membrane at the relatively low temperature. Our SOI microheater platform can be operated at the very low power consumption with novel metal oxide sensing materials, like ZnO or SnO2 nanostructured materials which demand relatively high sensing temperature. In addition, our sol-gel growth method of ZnO nanowires on the SOI membrane was found to be very effective compared with ink-jetting or CVD growth techniques. These combined techniques give us the possibility of smart chemical sensor technology easily merged into the conventional semiconductor IC application. The physical properties of ZnO nanowire network grown by the solution-based method and its chemical sensing property also were reported in this paper.

A simple combinatorial method aiding research on single-walled carbon nanotube growth on substrates

Establishing fabrication methods of carbon nanotubes (CNTs) is essential to realize many applications expected for CNTs. Catalytic growth of CNTs on substrates by chemical vapor deposition (CVD) is promising for direct fabrication of CNT devices, and catalyst nanoparticles play a crucial role in such growth. We have developed a simple method called "combinatorial masked deposition (CMD)", in which catalyst particles of a given series of sizes and compositions are formed on a single substrate by annealing gradient catalyst layers formed by sputtering through a mask. CMD enables preparation of hundreds of catalysts on a wafer, growth of single-walled CNTs (SWCNTs), and evaluation of SWCNT diameter distributions by automated Raman mapping in a single day. CMD helps determinations of the CVD and catalyst windows realizing millimeter-tall SWCNT forest growth in 10 min, and of growth curves for a series of catalysts in a single measurement when combined with realtime monitoring. A catalyst library prepared using CMD yields various CNTs, ranging from individuals, networks, spikes, and to forests of both SWCNTs and multi-walled CNTs, and thus can be used to efficiently evaluate self-organized CNT field emitters, for example. The CMD method is simple yet effective for research of CNT growth methods. © 2010 The Japan Society of Applied Physics.

Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure

The results of conductivity, photoconductivity and constant photocurrent method absorption measurements by DC and AC methods in hydrogenated silicon films with mixed amorphous-nanocrystalline structure are presented. A series of diphasic silicon films was deposited by very high frequency plasma enhanced chemical vapor deposition technique, using different hydrogen dilution ratios of silane. The increase of hydrogen dilution ratio results in five orders of magnitude increase of conductivity and a sharp increase of grain volume fraction. The comparison of the absorption spectra obtained by DC and AC methods showed that they are similar for silicon films with the predominantly amorphous structure and films with high grain volume fraction. However we found a dramatic discrepancy between the absorption spectra obtained by DC and AC constant photocurrent methods in silicon films deposited in the regime of the structure transition from amorphous to nanocrystalline state. AC constant photocurrent method gives higher absorption coefficient than DC constant photocurrent method in the photon energy range of 1.2-1.7 eV. This result indicates the possibility of crystalline grains contribution to absorption spectra measured by AC constant photocurrent method in silicon films with intermediate crystalline grain volume fraction. (c) 2008 Published by Elsevier B.V.

Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method

Passivation and low temperature method was carried out to grow InGaN/GaN quantum dots (QDs). Atomic force microscope observations were performed to investigate the evolution of the surface morphology of the InGaN QDs superlattices with increasing the superlattices layer number. The result shows that the size of the QDs increases with increasing superlattices layer number. The QDs height and diameter increase from 18 and 50 run for the monolayer InGaN QDs to 37 and 80 urn for the four-stacked InGaN QDs layers, respectively. This result is considered to be due to the stress field from the sub-layer dots. (C) 2003 Elsevier Science B.V. All rights reserved.

The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method

Multi-sheet InGaN/GaN quantum dots (QDs) were grown successfully by surface passivation processing and low-temperature growth in metalorganic chemical vapor deposition. This method based on the principle of increasing the energy barrier of adatom hopping by surface passivation and low-temperature growth, is quite different from present methods. The InGaN quantum dots in the first layer of about 40-nm-wide and 15-nm-high grown by this method were revealed by atomic force microscopy. The InGaN QDs in upper layer grew bigger. To our knowledge, the current-voltage characteristics of multi-sheet InGaN/GaN QDs were measured for the fist time. Two kinds of resonance-tunneling-current features were observed which were attributed to the low-dimensional localization effect. Some current peaks only appeared in positive voltage for sample due to the non-uniformity of the QDs in the structure. (C) 2002 Elsevier Science B.V. All rights reserved.

Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method - art. no. 60202F

In AlGaInP/GaInP multi-quantum well (MQW) lasers, the electron leakage current is a much more serious problem than that in laser diodes with longer wavelength. To further improve the output performance, the leakage current should be analyzed. In this letter, the temperature dependence of electrical derivative characteristics in AlGaInP/GaInP multi-quantum well lasers was measured, and the potential barrier for electron leakage was obtained. With the help of secondary ion mass spectroscopy (SIMS) measurement, theoretical analysis of the potential barrier was presented and compared with the measurement result. The influence of p-cladding doping level and doping profile on the potential barrier was discussed, and this can be helpful in metalorganic chemical vapor deposition (MOCVD) growth.

Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film

The influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition (PECVD) silicon nitride thin film is studied. The deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of SiN_x:H by HF solution. A low etch rate was achieved by increasing the SiH_4 gas flow rate or annealing temperature, or decreasing the NH_3 and N_2 gas flow rate. Concen-trated, buffered, and dilute hydrofluoric acid were utilized as etchants for SiO_2 and SiN_x:H. A high etching selectivity of SiO_2 over SiN_x:H was obtained using highly concentrated buffered HF.

High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method

High performance uncooled 1.55 mu m InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were reported in this paper. Whole MOCVD over growth method were applied in this work. The threshold currents of 5mA and the highest lasing temperature of 122 degrees C were obtained.

One step to detect the latent fingermarks with gold nanoparticles

A simple and environment friendly chemical route for detecting latent fingermarks by one-step single-metal nanoparticles deposition method (SND) was achieved successfully on several non-porous items. Gold nanoparticles (AuNPs) synthesized using sodium borohydride as reducing agent in the presence of glucose, were used as working solution for latent fingermarks detection. The SND technique just needs one step to obtain clear ridge details in a wide pH range (2.5-5.0), whereas the standard multi-metal deposition (MMD) technique requires six baths in a narrow pH range (2.5-2.8). The SND is very convenient to detect latent fingermarks in forensic scene or laboratory for forensic operators. The SND technique provided sharp and clear development of latent fingermarks, without background staining, dramatically diminished the bath steps.

Solution-phase synthesis of Au@ZnO core-shell composites

A novel solution-phase method for the preparation of Au@ZnO core-shell composites was described. With this method, the composites were grown without heating that is usually needed in other solution methods. Atomic force microscopy (AFM) results show that the diameter of Au@ZnO core-shell composites is about 10.5 nm. X-ray photoelectron spectroscopy (XPS) was applied to characterize Au@ZnO core-shell composites. The optical properties of Au@ZnO core-shell composites, including UV-vis absorption and photo luminescence (PL), were observed at room temperature.

Multi-scale modelling of atomic layer deposition

High-permittivity ("high-k") dielectric materials are used in the transistor gate stack in integrated circuits. As the thickness of silicon oxide dielectric reduces below 2 nm with continued downscaling, the leakage current because of tunnelling increases, leading to high power consumption and reduced device reliability. Hence, research concentrates on finding materials with high dielectric constant that can be easily integrated into a manufacturing process and show the desired properties as a thin film. Atomic layer deposition (ALD) is used practically to deposit high-k materials like HfO2, ZrO2, and Al2O3 as gate oxides. ALD is a technique for producing conformal layers of material with nanometer-scale thickness, used commercially in non-planar electronics and increasingly in other areas of science and technology. ALD is a type of chemical vapor deposition that depends on self-limiting surface chemistry. In ALD, gaseous precursors are allowed individually into the reactor chamber in alternating pulses. Between each pulse, inert gas is admitted to prevent gas phase reactions. This thesis provides a profound understanding of the ALD of oxides such as HfO2, showing how the chemistry affects the properties of the deposited film. Using multi-scale modelling of ALD, the kinetics of reactions at the growing surface is connected to experimental data. In this thesis, we use density functional theory (DFT) method to simulate more realistic models for the growth of HfO2 from Hf(N(CH3)2)4/H2O and HfCl4/H2O and for Al2O3 from Al(CH3)3/H2O.Three major breakthroughs are discovered. First, a new reaction pathway, ’multiple proton diffusion’, is proposed for the growth of HfO2 from Hf(N(CH3)2)4/H2O.1 As a second major breakthrough, a ’cooperative’ action between adsorbed precursors is shown to play an important role in ALD. By this we mean that previously-inert fragments can become reactive once sufficient molecules adsorb in their neighbourhood during either precursor pulse. As a third breakthrough, the ALD of HfO2 from Hf(N(CH3)2)4 and H2O is implemented for the first time into 3D on-lattice kinetic Monte-Carlo (KMC).2 In this integrated approach (DFT+KMC), retaining the accuracy of the atomistic model in the higher-scale model leads to remarkable breakthroughs in our understanding. The resulting atomistic model allows direct comparison with experimental techniques such as X-ray photoelectron spectroscopy and quartz crystal microbalance.

Investigation of the effect of the preparation method on the activity and stability of Au/CeZrO4 catalysts for the low temperature water gas shift reaction

The impact of the preparation method on the activity and stability of gold supported on ceria-zirconia low temperature water-gas shift (WGS) catalysts have been investigated. The influence of the gold deposition method, nature of the gold precursor, nature of the washing solution, drying method, Ce: Zr ratio of the support and sulfation of the support have been evaluated. The highest activity catalysts were obtained using a support with a Ce: Zr mole ratio 1: 1, HAuCl4 as the gold precursor deposited via deposition precipitation using sodium carbonate as the precipitation agent and the catalyst washed with water or 0.1 M NH4OH solution. In addition, the drying used was found to be critical with drying under vacuum at room temperature found to be most effective.

Bottom up strategies for the morphology control of BaTiO3 particulates

As propriedades funcionais dos materiais ferroeléctricos tais como a polarização reversível, piroelectricidade, piezoelectricidade, elevada actividade óptica não linear e comportamento dieléctrico não linear são fundamentais para a sua aplicação em sensores, microactuadores, detectores de infravermelhos, filtros de fase de microondas e memórias não-voláteis. Nos últimos anos, motivado pelas necessidades industriais de redução do tamanho dos dispositivos microelectrónicos, aumentando a eficiência volumétrica, tem sido feito um grande esforço ao nível da investigação para desenvolver estruturas ferroeléctricas à escala micro- e nano- métrica. É sabido que a redução de tamanho em materiais ferroeléctricos afecta significamente as suas propriedades. Neste sentido e considerando que foi previsto teoreticamente por cálculos ab initio que estruturas do tipo nanocilindros e nanodiscos apresentariam um novo tipo de ordem ferroeléctrica e, na expectativa de alcançar conhecimento para o desenvolvimento de uma nova geração de dispositivos microelectróncos, existe um grande interesse em desenvolver métodos de fabrico de nanoestruturas ferroeléctricas unidimensionais (1D) tais como nanocilindros e nanotubos. As estratégias de fabrico de nanoestruturas 1D até agora descritas na literatura indicam claramente as dificuldades inerentes à sua preparação. Existem duas grandes vias de síntese destas nanoestruturas: i) o método “topdown” que consiste na redução de tamanho de um dado material até à obtenção duma estrutura 1D; e ii) o método “bottom-up” em que átomos, iões e moléculas são agrupados para formar um material 1D. O método “top down” envolve em geral técnicas de desgaste, como o uso do feixe de electrões, que apesar de permitirem elevada precisão no posicionamento e no controlo do tamanho, falham em termos de resolução, exigem muito tempo e causam facilmente defeitos que deterioram as propriedades físicas destes materiais. Na metodologia “bottom up” a utilização de moléculas ou estruturas “molde” tem sido a mais explorada. As estructuras 1D podem também ser preparadas sem recorrer a “moldes”. Neste caso a agregação orientada é promovida pelo recurso a aditivos que controlam o crescimento dos cristais em direcções preferenciais. Neste contexto, neste trabalho utilizaram-se duas estratégias “bottom up” de baixo custo para a preparação de nanopartículas de titanato de bário (BaTiO3) com morfologia controlada: 1) síntese química (em solução e em fase vapor) com utilização de nanotubos de titanato TiNTs) como “moldes” e precursores de titânio 2) síntese química em solução com presença de aditivos. Os nanotubos de titanato de sódio foram preparados por síntese hidrotermal. Como existiam muitas dúvidas acerca da natureza estrutural e do mecanismo de formação dos NTs, a parte inicial do trabalho foi dedicada à realização de um estudo sistemático dos parâmetros intervenientes na síntese e à caracterização da sua estrutura e microestrutura. Foi demonstrado que os NTs têm a fórmula geral A2Ti2O5 (A = H+ or Na+), e não TiO2 (anátase) com defendido por vários autores na literatura, e podem ser preparados por método hidrotermal em meio fortemente alcalino usando como fonte de titânio TiO2 comercial na forma de anátase ou rútilo. A menor reactividade do rútilo exige temperaturas de síntese superiores ou tempos de reacção mais longos. A forma tubular resulta do tratamento hidrotermal e não de processos de lavagem e neutralização subsequentes. Se os NTs forem tratados após a síntese hidrotérmica em água a 200 ºC, transformam-se em nanocilindros. Uma das partes principais desta tese consistiu na investigação do papel dos NTs de titanato no crescimento anisotrópico de BaTiO3. O potencial funcionamento dos NTs como “moldes” para além de precursores foi testado em reacção com hidróxido de bário em síntese em solução e por reacção com um precursor orgânico de bário em fase vapor. Tendo por base os estudos cinéticos realizados, bem como as alterações estruturais e morfológicas das amostras, é possível concluir que a formação do BaTiO3 a partir de NTs de titanato de sódio, ocorre por dois mecanismos dependendo da temperatura e tempo de reacção. Assim, a baixa temperatura e curto tempo de reacção verifica-se que se formam partículas dendríticas de BaTiO3 cuja superfície é bastante irregular (“wild”) e que apresentam estrutura pseudo-cúbica. Estas partículas formam-se por reacção topotáctica na fronteira dos nanotubos de titanato de sódio. A temperaturas mais altas e/ou reacções mais longas, a reacção é controlada por um mecanismo de dissolução e precipitação com formação de dendrites de BaTiO3 tetragonais com superfície mais regular (“seaweed”). A microscopia de força piezoeléctrica mostrou que as dendrites “seaweeds“ possuem actividade piezoeléctrica superior à das dendrites “wild”, o que confirma o papel desempenhado pela estrutura e pela concentração de defeitos na rede na coerência e ordem ferroeléctrica de nanoestruturas. Os nossos resultados confirmam que os NTs de titanato não actuam facilmente como “moldes” na síntese em solução de BaTiO3 já que a velocidade de dissolução dos NTs em condições alcalinas é superior à velocidade de formação do BaTiO3. Assumindo que a velocidade de reacção dos NTs com o precursor de bário é superior em fase vapor, efectuou-se a deposição de um precursor orgânico de bário por deposição química de vapor sobre um filme de NTs de titnato de sódio depositados por deposição electroforética. Estudou-se a estabilidade dos NTs nas diferentes condições do reactor. Quando os NTs são tratados a temperaturas superiores a 700 ºC, ocorre a transformação dos NTs em nanocilindros de anatase por um mecanismo de agregação orientada. Quando se faz a deposição do precursor de bário, seguida de calcinação a 700 ºC em atmosfera oxidante de O2, verifica-se que a superficie dos NTs fica coberta com nanocristais de BaTiO3 independentemente da concentração de bário. O papel dos NTs de titanato no crescimento anisotrópico de BaTiO3 em fase vapor é assim descrito pela primeira vez. Em relação à metodologias de crescimento de partículas na ausência de “moldes” mas com aditivos fez-se um estudo sistemático utilizando 5 aditivos de natureza differente. As diferenças entre aditivos foram sistematizadas tendo em conta as diferenças estruturais e morfológicas verificadas. Está provado que os aditivos podem funcionar como modificadores de crescimento cristalino por alteração do seu padrão de crescimento ou por alteração da cinética de crescimento das faces cristalográficas do cristal. Entre os aditivos testados verificou-se que o ácido poliacrilíco adsorve em faces específicas do BaTiO3 alterando a cinética de crescimento e induzindo a agregação orientada das partículas. O polivinilpirrolidona, o docecilsulfato de sódio e hidroxipropilmetilcelulose actuam mais como inibidores de crescimento do que como modificadores do tipo de crescimento. A D-frutose aumenta a energia de activação da etapa de nucleação não ocorrendo formação de BaTiO3 para as mesmas condições dos outros aditivos. Esta tese clarifica o papel dos NTs de titanato de sódio enquanto precursores e “moldes” no crescimento anisotrópico de BaTiO3 em solução e em fase vapor. É feita também a abordagem do controlo morfológico do BaTiO3 através do uso de aditivos. As estratégias de preparação de BaTiO3 propostas são de baixo custo, reprodutíveis e fáceis de efectuar. Os resultados contribuem para uma melhor compreensão da relação tamanho – morfologia – propriedade em materiais ferroeléctricos nanométricos com vista à sua potencial aplicação.