低压条件下滴灌灌水均匀度试验研究

低压滴灌毛管进口工作压力、铺设长度、地面坡度及毛管管径是影响滴灌灌水均匀度的重要参数。试验研究结果表明,低压条件下毛管进口压力的变化对灌水均匀度的影响并不明显;灌水均匀度随着毛管铺设长度的增大呈降低趋势,管径越小,降低越显著,但在一定管长范围内,毛管铺设长度对灌水均匀度的影响并不明显;逆坡情况下,灌水均匀度随着坡度的增大而减小,顺坡情况下,灌水均匀度随着坡度的增大呈先增大而后减小的趋势,在2‰的坡度时达到峰值;灌水均匀度随着管径的增大而增大,当管径增大到一定程度后,灌水均匀度随管径增大的幅度减缓。

喷灌均匀系数的三次样条两次插值计算方法

为提高喷灌水量分布均匀性评价的准确性,当雨量筒径向布置时,为考虑所有测点数据对插值点降水深的影响,采用径向和周向两次的三次样条插值计算出未知点的降水深,从而计算喷灌均匀系数。以美国雨鸟30PSH型喷头雨量筒间隔为1m和2m的喷洒试验数据,计算网格点取1m和0.25m,分别采用三次样条两次插值法和邻近四点距离线性插值法计算了克里斯琴森均匀系数。结果表明,均匀系数由高至低的顺序依次为采样间隔为2m的线性插值、采样间隔为2m的三次样条两次插值、采样间隔为1m的线性插值和采样间隔为1m的三次样条两次插值。采样间隔2m比1m计算出的均匀系数总体高3~4个百分点,三次样条两次插值法比邻近点距离线性插值法略低1个百分点,2种计算网格点间距下的均匀系数差值小于1个百分点。结果证明,采样间距、插值方法、计算网格间距对均匀系数的影响依次降低,三次样条两次插值法可以用来评价喷灌组合均匀系数。

喷灌分布均匀系数研究

为突出局部灌溉不足或灌溉过量对均匀性的影响程度,提出了基于几何平均数分布均匀系数的概念,将其定义为部分测点水深几何平均值与所有测点算术平均值的比值。并根据部分测点水深数据的提取方法不同,分为1/4低值、1/4高值、1/2低值和1/2高值分布均匀系数。用MATLAB和VC~++语言编制了可以实现上述分布均匀系数计算的软件"SIUEW1.0"。结果初步证明:基于几何平均数的乘法模型要比基于算术平均数的加法模型更加突出了部分低(或高)于平均值的测点水深数据对均匀系数的影响程度,因此更适用于时局部灌溉不足或过量灌溉有严格控制要求地块的灌溉均匀性评价;无论高值和低值,取点数越少,均匀性的评价结果越差。

A novel quantum directional coupler based on Pi-shaped coupled electron waveguides

We explore the possibility of a quantum directional coupler based on Pi-shaped coupled electron waveguides with smooth boundaries. By calculating the transmission spectra, we propose an optimized coupler structure with a high directivity and fine uniformity. The coupler specifications, directivity, uniformity, and coupling coefficient are evaluated.

Electrical properties of semi-insulating GaAs grown from the melt under microgravity conditions

A technologically important undoped semi-insulating (SI) GaAs single crystal was successfully grown in the Chinese recoverable satellite as far as we know for the first time by using a similar growth configuration described previously. The experimental results proved that the space SI GaAs crystals have a lower density of defects and defect-impurity complexes as well as a better uniformity.

An Improvement on 2× 2 Silicon-on-Insulator Mach-Zehnder Thermo-Optical Switch

An improved 2 ×2 silicon-on-insulator Mach-Zehnder thermo-optical switch is designed and fabricated, which is based on strongly guided multimode interference couplers and single- mode phase-shifting arms. The multimode interference couplers and input/output waveguides are deeply etched to improve coupler performances and coupler-waveguide coupling efficiencies. However, shallow etching is used in the phase-shifting arms to guarantee single-mode property. The strongly guided coupler presents an attractive uniformity about 0. 03 dB and a low propagation loss of -0.6 dB. The 2× 2 switch shows an insertion loss as low as -6.8 dB, where the fiber-waveguide coupling loss of -4.3 dB is included, and the response-time is measured as short as 6.8 μs, which are much better than our previous results.

X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD

The growth,fabrication,and characterization of 0.2μm gate-length AlGaN/GaN HEMTs,with a high mobility GaN thin layer as a channel,grown on (0001) sapphire substrates by MOCVD,are described.The unintentionally doped 2.5μm thick GaN epilayers grown with the same conditions as the GaN channel have a room temperature electron mobility of 741cm2/(V·s) at an electron concentration of 1.52×1016 cm-3.The resistivity of the thick GaN buffer layer is greater than 108Ω·cm at room temperature.The 50mm HEMT wafers grown on sapphire substrates show an average sheet resistance of 440.9Ω/□ with uniformity better than 96%.Devices of 0.2μm×40μm gate periphery exhibit a maximum extrinsic transconductance of 250mS/mm and a current gain cutoff frequency of77GHz.The AlGaN/GaN HEMTs with 0.8mm gate width display a total output power of 1.78W (2.23W/mm) and a linear gain of 13.3dB at 8GHz.The power devices also show a saturated current density as high as 1.07A/mm at a gate bias of 0.5V.

An Efficient MMI SOI Splitter with Multimode Input/Output Waveguides

A 1×8 multimode interference power splitter with multimode input/output waveguides in SOI material is designed by the beam propagation method and fabricated by the inductive coupled plasma etching technology for use in fiber optics communication systems.The fabricated device exhibits low loss and good coupling uniformity.The excess loss is lower than 0.8dB,and the uniformity is 0.45dB at the wavelength of 1550nm.Moreover,the polarization dependent loss is lower than 0.7dB at 1550nm.The device size is only 2mm×10mm.

Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides

50mm SiC films with high electrical uniformity are grown on Si(111) by a newly developed vertical low-pressure chemical vapor deposition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achieved by intentional introduction of ammonia and boron into the precursor gases.The dependence of growth rate and surface morphology on the C/Si ratio and optimized growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN films are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epitaxy (MBE).The data of both X-ray diffraction and low temperature photoluminescence of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buffer layer for the growth of Ⅲ-nitrides on Si substrates with no cracks.

Non-stoichiometry Related Deep Level Defects in Semi-insulating InP

Semi-insulating (SI) InP materials have been prepared under different stoichiometric conditions, including Fe-doping in indium-rich melt and high temperature annealing undoped wafer in phosphorus and iron phosphide ambients. Deep level defects related with non-stoichiometry have been detected in the SI-InP samples. A close relationship between the material quality of electrical property and native deep defects has been revealed by a comprehensive study of defects in as-grown Fe-doped and annealed undoped SI-InP materials. Fe-doped SI-InP material with low carrier mobility and poor thermal stability contains a high concentration of deep defects with energy levels in the range of 0.1-0.4eV. The suppression of the defects by high temperature annealing undoped InP leads to the manufacture of high quality SI-InP with high mobility and good electrical uniformity. A technology for the growth of high quality SI-InP through stoichiometry control has been proposed based on the results.

Design and Fabrication of Ultracompact 3-dB MMI Coupler in Silicon-on-Insulator

An ultracompact 3-dB coupler is designed and fabricated in silicon-on-insulator,based on 12 line tapered multimode interference(MMI) coupler.Comparing with the conventional straigth MMI coupler,the device is-40% shorter in length.The device exhibits uniformity of 1.3dB and excess loss of 2.5dB

Multimode Interference Couplers with Different Background Refractive Index *

A novel structure of MMI coupler with different background refractive index has been designed. With stronger optical confinement in multimode waveguides, more guided modes are excited to improve imaging quality. Two-dimensional finite difference beam propagation method (2-D FDBPM) was used to simulate this new structure and had proven that its imaging quality, in terms of power uniformity and excess loss, is much better than conventional structure. This structure can be applied in SOI rib waveguides by deep etching method.

Temperature Dependence of Characteristics for Multimode Interference Based 3-dB Coupler in SOI

The temperature dependence of characteristics for multimode interference (MMI) based 3-dB coupler in silicon-on-insulator is analyzed, which originates from the relatively high thermo-optic coefficient of silicon. For restricted interference 3-dB MMI coupler, the output power uniformity is ideally 0 at room temperature and becomes 0. 32 dB when temperature rises up to 550 K. For symmetric interference 3-dB MMI coupler, the power uniformity keeps ideally 0 due to its intrinsic symmetric interference mechanism. With the temperature rising, the excess loss of the both devices increases. The performance deterioration due to temperature variety is more obvious to restricted interference MMI 3-dB coupler, comparing with that of symmetric interference MMI 3-dB coupler.

SOI Waveguides Fabricated by Wet-Etching Method

SOI waveguides fabricated by wet-etching method are demonstrated. The single mode waveguide and 1×2 3dB BBI splitter are analyzed and designed by three dimensional beam propagation method to correct the error of effective index method and guided mode method. The devices are fabricated. Excellent performances, such as low propagation loss of -1.37dB/cm, low excess of -2.2dB, and good uniformity of 0.3dB, are achieved.

Preparation of Semi-Insulating Material by Annealing Undoped InP

Semi-insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped liquid encapsulated Czochralski (LEC) InP at 930 ℃ for 80h. The annealing ambient can be pure phosphorus (PP) or iron phosphide (IP). The IP-SI InP wafers have good electrical parameters and uniformity of whole wafer. However, PP-SI InP wafers exhibit poor uniformity and electrical parameters, Photoluminescence which is subtle to deep defect appears in IP-annealed semi-insulating InP. Traps in annealed SI InP are detected by the spectroscopy of photo-induced current transient. The results indicate that there are fewer traps in IP-annealed undoped SI InP than those in as-grown Fe-doped and PP-undoped SI-undoped SI InP. The formation mechanism of deep defects in annealed undoped InP is discussed.