Yb：FAP晶体生长

采用中频感应提拉法生长了Yb：FAP晶体。对晶体生长中影响晶体质量的因素特别是原料的处理、CaF2的挥发等进行了研究和讨论。运用ICP-AES测定Yb^3＋离子在Yb：FAP晶体中的分凝系数。对Yb：FAP晶体进行了高分辨X射线的四圆衍射实验，结果表明晶体具有比较高的晶格完整性。

Yb:YAP与Yb:YAG晶体光谱性能比较

应用中频感应提拉法生长出掺杂浓度为10 at.-%的Yb:YAG与Yb:YAP晶体，对比了室温下两种晶体的吸收和发射光谱特性。结果表明，Yb:YAG晶体比Yb:YAP晶体有更好的激光性能和低的阈值；同时对比发现，Yb:YAP晶体的吸收截面是Yb:YAG晶体的2.16倍，它容易实现LD泵；由于Yb:YAP晶体的各向异性，它有轴向效应明显，它可以产生偏振激光。

Sm:GdVO_4晶体的生长及光谱性能研究

应用中频感应提拉法生长出掺杂浓度为2%原子分数的Sm:GdVO4晶体,研究了室温下c轴方向Sm:GdVO4晶体的吸收和荧光光谱。通过J-O理论计算出强度参数(Ωt),同时计算了对应于4G5/2能级的自发跃迁几率、荧光分支比和辐射寿命。通过荧光光谱计算了对应于566、604和646nm三个发射峰对应的发射截面,结果表明,Sm:GdVO4在604nm的发射截面最大,是掺Sm:YAP在607nm处发射截面的4.4倍。

ScAlMgO_4晶体的生长缺陷

采用提拉法生长出φ30 mm×55 mm的ScAlMgO4晶体。在晶体生长过程中有轻微的挥发,粉末X射线衍射分析表明:挥发物质为MgO单相。运用扫描电镜、光学显微镜以及高分辨X射线衍射仪对晶体中的包裹物、开裂、生长条纹和小角晶界缺陷进行了研究。结果表明:温度梯度和热应力是形成晶体中缺陷的主要原因。通过合理设计温场,控制固-液界面的形状及冷却过程的降温速率,可以提高晶体的完整性。

铝酸钇晶体中的生长小面

采用提拉法生长了掺Ce、掺Yb和掺Mn的铝酸钇(YAlO3,YAP)晶体,晶体均完整透明,无肉眼可见的气泡、散射和包裹物等宏观缺陷。通过化学腐蚀和同步辐射白光形貌实验检测了YAP晶体中的生长小面缺陷。结果表明:晶体生长过程中,由于凸向熔体的固-液界面,造成了小面生长现象。沿[101]方向生长的YAP晶体中出现的小面为(102),(201),(121)和(121)奇异面。X射线摇摆曲线表征的结果表明:生长小面的存在严重破坏了晶体的微观结构完整性和均匀性,并导致了小角度晶界缺陷的产生。

Tm:Y_2SiO_5晶体的生长和光谱性质研究

采用中频感应提拉法生长了高质量的Tm:Y2SiO5(Tm:YSO)晶体,测定了晶体的晶格常数和分凝系数.运用劳厄照相法确定了单斜晶系Tm:YSO晶体的三个偏振轴〈010〉,D1和D2,在室温下测量了三个偏振轴方向的吸收光谱、荧光光谱和荧光寿命,计算了晶体吸收峰的吸收线宽和吸收截面.研究发现,相对于其他两个偏振轴方向,D1方向在790 nm处出现较强的吸收峰,同时在2μm附近出现了一定强度的发射峰,D1方向的吸收截面较大,荧光寿命较长.Tm:YSO晶体适用于AlGaAs二极管抽运固体激光器,在2μm波段固体激光器的应用上将有很大的发展潜力.

Influence of deposition conditions on the microstructure of oxides thin films

Thin films of ZrO2, HfO2 and TiO2 were deposited on kinds of substrates by electron beam evaporation (EB), ion assisted deposition (IAD) and dual ion beam sputtering (DIBS). Then some of them were annealed at different temperatures. X-ray diffraction (XRD) was applied to determine the crystalline phase and the grain size of these films, and the results revealed that their microstructures strongly depended on the deposition conditions such as substrate, deposition temperature, deposition method and annealing temperature. Theory of crystal growth and migratory diffusion were applied to explain the difference of crystalline structures between these thin films deposited and treated under various conditions. (c) 2007 Elsevier B.V. All rights reserved.

Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

Effect of dietary supplementation of tocoferol acetate alone and with varying combinations on growth, survival and fatty acids profile of Macrobrachium rosenbergii larvae through Moina micrura enrichment

A study was carried out to determine the effect of tocopherol acetate along with cod liver oil astaxanthin enriched Moina micrura (MC- control, Ml- tocopherol acetate enriched, M2-tocopherol acetate combined with cod liver oil (CLO) enriched and M3- tocopherol acetate combined with astaxanthin enriched) on growth, survival and fatty acid composition of M. rosenbergii (de Man) larvae (TC- unenriched Moina fed larvae, Tl- tocopherol acetate enriched Moina fed larvae, T2- tocopherol acetate + CLO enriched Moina fed larvae to T3 – tocopherol acetate+ astaxanthin enriched Moina fed larvae). Growth was expressed as the time taken in to the settlement of 95% post larvae. Maximum growth i.e., the lowest time taken to the 95% PL settlement (40 days) and the maximum survival percentage (61%) was observed in both T2 and T3 treatments fed with M2 and M3 Moina respectively. Minimum growth and survival was observed in unenriched Moina fed larvae (TC). In larval treatments T2, (larvae fed with (M2) vitamin E + CLO enriched Moina), showed a higher percentage of EPA, DHA and higher HUFA level than other treatments.

Growth window and possible mechanism of millimeter-thick single-walled carbon nanotube forests.

Our group recently reproduced the water-assisted growth method, so-called "SuperGrowth", of millimeter-thick single-walled carbon nanotube (SWNT) forests by using C2H4/H2/H2O/Ar reactant gas and Fe/Al2O3, catalyst. In this current work, a parametric study was carried out on both reaction and catalyst conditions. Results revealed that a thin Fe catalyst layer (about 0.5 nm) yielded rapid growth of SWNTs only when supported on Al2O3, and that Al2O3 support enhanced the activity of Fe, Co, and Ni catalysts. The growth window for the rapid SWNT growth was narrow, however. Optimum amount of added H2O increased the SWNT growth rate but further addition of H2O degraded both the SWNT growth rate and quality. Addition of H2 was also essential for rapid SWNT growth, but again, further addition decreased both the SWNT growth rate and quality. Because Al2O3 catalyzes hydrocarbon reforming, Al2O3 support possibly enhances the SWNT growth rate by supplying the carbon source to the catalyst nanoparticles. The origin of the narrow window for rapid SWNT growth is also discussed.

Growth of large sized y Ba 2Cu 3O 7 single crystals using the top seeded melt growth process

Neutron scattering experiments are fundamental to the study of magnetic order and related phenomena in a range of superconducting and magnetic materials. Traditional methods of crystal growth, however, do not yield single crystals of sufficient size for practical neutron scattering measurements. In this paper, we demonstrate the growth of relatively pure, large Y Ba 2Cu 3O 7 single crystals up to 30mm in diameter using a top seeded melt growth process. The characterization of the microstructural and magnetic properties of these crystals indicates that they contain <2% of impurity phases and, hence, exhibit only weak flux pinning behaviour. © 2012 IOP Publishing Ltd.

Photoconductive hybrid films via directional self-assembly of C 60 on aligned carbon nanotubes

Hybrid nanostructured materials can exhibit different properties than their constituent components, and can enable decoupled engineering of energy conversion and transport functions. Novel means of building hybrid assemblies of crystalline C 60 and carbon nanotubes (CNTs) are presented, wherein aligned CNT films direct the crystallization and orientation of C 60 rods from solution. In these hybrid films, the C 60 rods are oriented parallel to the direction of the CNTs throughout the thickness of the film. High-resolution imaging shows that the crystals incorporate CNTs during growth, yet grazing-incidence X-ray diffraction (GIXD) shows that the crystal structure of the C 60 rods is not perturbed by the CNTs. Growth kinetics of the C 60 rods are enhanced 8-fold on CNTs compared to bare Si, emphasizing the importance of the aligned, porous morphology of the CNT films as well as the selective surface interactions between C 60 and CNTs. Finally, it is shown how hybrid C 60-CNT films can be integrated electrically and employed as UV detectors with a high photoconductive gain and a responsivity of 10 5 A W -1 at low biases (± 0.5 V). The finding that CNTs can induce rapid, directional crystallization of molecules from solution may have broader implications to the science and applications of crystal growth, such as for inorganic nanocrystals, proteins, and synthetic polymers. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process

Taper-free and vertically oriented Ge nanowires were grown on Si (111) substrates by chemical vapor deposition with Au nanoparticle catalysts. To achieve vertical nanowire growth on the highly lattice mismatched Si substrate, a thin Ge buffer layer was first deposited, and to achieve taper-free nanowire growth, a two-temperature process was employed. The two-temperature process consisted of a brief initial base growth step at high temperature followed by prolonged growth at lower temperature. Taper-free and defect-free Ge nanowires grew successfully even at 270 °C, which is 90 °C lower than the bulk eutectic temperature. The yield of vertical and taper-free nanowires is over 90%, comparable to that of vertical but tapered nanowires grown by the conventional one-temperature process. This method is of practical importance and can be reliably used to develop novel nanowire-based devices on relatively cheap Si substrates. Additionally, we observed that the activation energy of Ge nanowire growth by the two-temperature process is dependent on Au nanoparticle size. The low activation energy (∼5 kcal/mol) for 30 and 50 nm diameter Au nanoparticles suggests that the decomposition of gaseous species on the catalytic Au surface is a rate-limiting step. A higher activation energy (∼14 kcal/mol) was determined for 100 nm diameter Au nanoparticles which suggests that larger Au nanoparticles are partially solidified and that growth kinetics become the rate-limiting step. © 2011 American Chemical Society.

The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

High-quality Ge epilayer on Si(1 0 0) substrate with an inserted low-temperature Ge seed layer and a thin Si0.77Ge0.23 layer was grown by ultrahigh vacuum chemical vapor deposition. The epitaxial Ge layer with surface root-mean-square roughness of 0.7 nm and threading dislocation density of 5 x 10(5) cm(-2) was obtained. The influence of low temperature Ge seed layer on the quality of Ge epilayer was investigated. We demonstrated that the relatively higher temperature (350 degrees C) for the growth of Ge seed layer significantly improved the crystal quality and the Hall hole mobility of the Ge epilayer. (C) 2008 Elsevier B.V. All rights reserved.

Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy

The crystalline, surface, and optical properties of the (10 (1) over bar(3) over bar) semipolar GaN directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) were investigated. It was found that the increase of V/III ratio led to high quality (10 (1) over bar(3) over bar) oriented GaN epilayers with a morphology that may have been produced by step-flow growth and with minor evidence of anisotropic crystalline structure. After etching in the mixed acids, the inclined pyramids dominated the GaN surface with a density of 2 X 10(5) cm(-2), revealing the N-polarity characteristic. In the low-temperature PL spectra, weak BSF-related emission at 3.44eV could be observed as a shoulder of donor-bound exciton lines for the epilayer at high V/III ratio, which was indicative of obvious reduction of BSFs density. In comparison with other defect related emissions, a different quenching behavior was found for the 3.29 eV emission, characterized by the temperature-dependent PL measurement. (C) 2009 Elsevier B.V. All rights reserved.