Sm:GdVO_4晶体的生长及光谱性能研究

应用中频感应提拉法生长出掺杂浓度为2%原子分数的Sm:GdVO4晶体,研究了室温下c轴方向Sm:GdVO4晶体的吸收和荧光光谱。通过J-O理论计算出强度参数(Ωt),同时计算了对应于4G5/2能级的自发跃迁几率、荧光分支比和辐射寿命。通过荧光光谱计算了对应于566、604和646nm三个发射峰对应的发射截面,结果表明,Sm:GdVO4在604nm的发射截面最大,是掺Sm:YAP在607nm处发射截面的4.4倍。

The 2at.% Sm:GdVO₄ crystal was grown by the Czochralski method. The absorption and fluorescence spectra along the crystallographic axis c were measured at room temperature. Judd-Ofelt theory was used to calculate the intensity parameters (Ωt), the spontaneous emission probability, the branching ratio and the radiative lifetime of the state ⁴G_5/2. The peak emission cross-sections were also estimated at 566, 604 and 646 nm wavelengths. The emission cross-section at 604 nm is 7.62 × 10^-21 cm², 4.4 times lager than that in Sm:YAP at 607 nm.