Yb：FAP晶体生长

采用中频感应提拉法生长了Yb：FAP晶体。对晶体生长中影响晶体质量的因素特别是原料的处理、CaF2的挥发等进行了研究和讨论。运用ICP-AES测定Yb^3＋离子在Yb：FAP晶体中的分凝系数。对Yb：FAP晶体进行了高分辨X射线的四圆衍射实验，结果表明晶体具有比较高的晶格完整性。

Yb:FAP crystal has been grown by Czoehralski method. The main factors that affect the quality of Yb:FAP crystal were studied, especially the treatment of raw materials and the volatilizations of CaF₂. The segregation coefficients of Yb³⁺ ions in Yb:FAP crystal were detected by ICP-AES method. The lattice integrality of Yb:FAP crystal was investigated by high-resolution X-ray diffraction.