稀土配合物有机／无机杂化薄膜的制备与光电性质研究

有机／无机杂化功能超薄膜是二十一世纪分子科学的重要发展前沿之一，设计具有功能性的有机／无机杂化薄膜已成为这一领域的挑战性课题。本论文分别采用Lallgmuir-B1odgett（LB）膜技术及溶胶一凝胶薄膜组装技术，将稀土无机配合物和稀土有机配合物分别与有机大分子化合物进行薄膜分子组装，对稀土配合物有机／无机杂化薄膜的光、电性质进行了研究。采用LB技术，将K11Ce（PWllO39）2·22H2O，K11Eu（PW11O39）2·25H2O，K11Gd（PW11O39）2·24H2O，K11Sm（PMo11O39）2·19H2O，K11Ce（PMo11O39）2·23H2O，K11Eu（PMo11O39）2·22H2O，K11Gd（PMo11O39）2·2OH2O，K11La（PMo11O39）2·18H2O八种稀土杂多化合物分别掺杂到聚喳琳中，得到十八胺（十八酸）／聚喳琳／稀土杂多化合物导电杂化LB膜。杂化LB膜表面的稀土杂多化合物颗粒大小在30-80nm之间。电性质研究表明，稀土杂多化合物的掺杂可使聚喳琳的导电性显著提高，且钥系稀土杂多化合物掺杂使聚哇琳的导电性增加更为显著。采用溶胶一凝胶薄膜组装技术，将K13（EuSiW11O39）2·28H2O，K13（EuGewl 1039）2·25H2O，K巧（EuBWllO39）2·22H2O，N钩SmWlo036·18H20，Na9DyS10O36·22H2O五种稀土杂多化合物分别与聚醋进行薄膜组装，得到聚醋／稀土杂多化合物溶胶一凝胶膜。荧光光谱研究表明，稀土离子在溶胶一凝胶膜中格位对称性降低，红橙比和黄蓝比发生了改变。1:11型稀土杂多化合物固体与聚酷／稀土杂多化合物溶胶一凝胶膜有不同的能量转移过程，在溶胶一凝胶膜中，配体能将能量传递给稀土离子。采用原位法将对十六烷氧基苯甲酸试及邻十七酞基苯甲酸试有机配合物分别进行了溶胶一凝胶薄膜组装，对其荧光性质进行了研究。结果表明，芳香梭酸配体与稀土诫离子有较好的能级匹配，能够有效地将吸收的能量传递给Tb3+离子，薄膜具有良好的发绿光性能。

溶胶-凝胶法制备导电聚苯胺杂化材料

针对有机一无机杂化材料制备过程中致命的体积收缩问题，本论文相继选用一系列具有亲水性官能团的聚倍半硅氧化物类前驱体为基体，采用溶胶一凝胶方法，以区域限制方式把水溶性导电聚苯胺固定在三维无机网络内，获得了耐水型自支撑杂化导电膜，该自支撑膜呈现出一定的机械强度与耐磨性。同时，为了进一步增加有机、无机组分之间的作用力，获取分子级别杂化材料，本文尝试了在导电聚苯胺与无机网络之间引入共价键、离子键等较强相互作用，得到了一些有意义的结果，具体如下：（1）亲水性的倍半硅氧烷前驱体、桥联倍半硅氧烷前驱体均能与水溶性导电聚苯胺形成平整的自支撑膜，该导电膜呈现出较好的耐”水性。（2）通过一步掺杂法制备的化学键接型水溶性导电聚苯胺／无机杂化膜除显示出良好的耐水性外，其热稳定性也得到了提高，从而为耐热型导电杂化膜的开发提供了思路。（3）有机一无机组分间通过离子键接引入静电相互作用亦是提高体系相容性，获取耐水型自支撑杂化膜的另一有效的方法。但由于导电膜中含有大量的离子键，与上述两体系相比，机械强度显得稍脆。（4）带有长链状亲水基团的掺杂剂酸性磷酸酷具有很强的自组装能力，不仅能在杂化体系中指导聚苯胺纳米管的构筑，而且能通过聚合单体法直接生成大批量聚苯胺纳米管材料。

RESEARCH ON ELECTRICAL-PROPERTIES OF AMPHIPHILIC LIPID-MEMBRANES BY MEANS OF INTERDIGITAL ELECTRODES

Lipids are the main component of all cell membranes and also important mimetic materials. Moreover, it was found recently that they can be used as sensitive membranes for olfactory and taste sensors. Hence the understanding of lipid resistance is important both in sensors and in life sciences. Thirteen lipids were examined by means of interdigital electrodes with narrow gaps of 20-50 mu m, made by IC technology. The membrane lateral resistance in air, resisting electrical voltage, the influence of impurities on resistance and the resistance change in acetic acid vapour are presented for the first time. It is shown that the electrical resistivity for self-assembling lipids depends on their duration of being in an electric field and the content of the conductive impurities. The interdigital electrode is a transducer as well as a powerful tool for researching biomaterials and mimicking materials. The conducting mechanism of lipids is discussed. This method is also suitable for some polymer membranes.

Elastic Strain Field Distribution of a Self-Organized Growth Lensed-Shaped Quantum Dot by Finite Element Method

The stress and strain fields in self-organized growth coherent quantum dots (QD) structures are investigated in detail by two-dimension and three-dimension finite element analyses for lensed-shaped QDs. The nonobjective isolate quantum dot system is used. The calculated results can be directly used to evaluate the conductive band and valence band confinement potential and strain introduced by the effective mass of the charge carriers in strain QD.

Tunnel Junction AlGaInP Light Emitting Diode

The n-type GaAs substrates are used and their conductive type is changed to p-type by tunnel junction for AlGaInP light emitting diodes (TJ-LED), then n-type GaP layer is used as current spreading layer. Because resistivity of the n-type GaP is lower than that of p-type, the effect of current spreading layer is enhanced and the light extraction efficiency is increased by the n-type GaP current spreading layer. For TJ-LED with 3μm n-type GaP current spreading layer, experimental results show that compared with conventional LED with p-type GaP current spreading layer, light output power is increased for 50% at 20mA and for 66.7% at 100mA.

JFET SOS devices: Processing and gamma radiation effects

A process for fabricating n channel JFET/SOS (junction field-effect transistors on silicon-on-sapphire) has been researched. The gate p(+)n junction was obtained by diffusion, and the conductive channel was gotten by a double ion implantation. Both enhancement and depletion mode transistors were fabricated in different processing conditions. From the results of the Co-50 gamma ray irradiation experimental we found that the devices had a good total dose radiation-hardness. When the tot;ll dose was 5Mrad(Si), their threshold voltages shift was less than 0.1V. The variation of transconductance and the channel leakage current were also little.

Visible vertical cavity surface emitting laser

We have designed and fabricated the visible vertical-cavity surface-emitting lasers (VCSEL's) by using metalorganic vapor phase epitaxy (MOVPE). We use the 8 lambda optical cavities with 3 quantum wells in AlGaInP/AlGaAs red VCSEL's to reduce the drift leakage current and enhance the model gain in AlGaInP active region. The structure has a p-type stack with 36 DBR pairs on the top and an n-type with 55-1/2 pairs on the bottom. Using micro-area reflectance spectrum, we try to get a better concordance between the center wavelength of DBR and the emitting wavelength of the active region. We used a component graded layer of 0.05 lambda thick (x = 0.5 similar to 0.9) at the p-type DBR AlGaAs/AlAs interface to reduce the resistance of p-type DBR. We use selective oxidation to define the current injection path. Because the oxidation rate of a thick layer is faster than a thinner one, we grown a thick AlAs layer close to the active region. In this way, we got a smaller active region for efficient confinement of injected carriers (the aperture area is 3 x 3 mu m) to reduce the threshold and, at the same time, a bigger conductive area in the DBR layers to reduce the resistance. We employ Zn doping on the p-side of the junction to improve hole injection and control the Zn dopant diffusion to get proper p-i-n junction. At room temperature, pulse operation of the laser has been achieved with the low threshold current of 0.8mA; the wavelength is about 670nm.

Transport properties through quantum dot in a vertical electric field

The transport properties through a quantum dot are calculated using the recursion method. The results show that the electric fields can move the conductive peaks along the high- and low-energies. The electric field changes the intensity of conductance slightly. Our theoretical results should be useful for researching and making low-dimensional semiconductor optoelectronic devices. (C) 2002 Elsevier Science B.V. All rights reserved.