Elastic Strain Field Distribution of a Self-Organized Growth Lensed-Shaped Quantum Dot by Finite Element Method

The stress and strain fields in self-organized growth coherent quantum dots (QD) structures are investigated in detail by two-dimension and three-dimension finite element analyses for lensed-shaped QDs. The nonobjective isolate quantum dot system is used. The calculated results can be directly used to evaluate the conductive band and valence band confinement potential and strain introduced by the effective mass of the charge carriers in strain QD.

The stress and strain fields in self-organized growth coherent quantum dots (QD) structures are investigated in detail by two-dimension and three-dimension finite element analyses for lensed-shaped QDs. The nonobjective isolate quantum dot system is used. The calculated results can be directly used to evaluate the conductive band and valence band confinement potential and strain introduced by the effective mass of the charge carriers in strain QD.

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国家重点基础研究发展计划,国家高技术研究发展计划,集成光电子学国家重点联合实验室开放课题资助项目

School of Science,Beijing University of Posts & Telecommunications;Institute of Semiconductors,Chinese Academy of Sciences

国家重点基础研究发展计划,国家高技术研究发展计划,集成光电子学国家重点联合实验室开放课题资助项目