A Selective-Area Metal Bonding InGaAsP-Si Laser

A 1.55-mu m hybrid InGaAsP-Si laser was fabricated by the selective-area metal bonding method. Two Si blocking stripes, each with an excess-metals accommodated space, were used to separate the optical coupling area and the metal bonding areas. In such a structure, the air gap between the InGaAsP structure and Si waveguide has been reduced to be negligible. The laser operates with a threshold current density of 1.7 kA/cm(2) and a slope efficiency of 0.05 W/A under pulsed-wave operation. Room-temperature continuous lasing with a maximum output power of 0.45 mW is realized.

CONTROLLING OF SCHOTTKY-BARRIER HEIGHTS FOR AU/N-GAAS AND TI/N-GAAS WITH HYDROGEN INTRODUCED AFTER METAL-DEPOSITION BY BIAS ANNEALING

Up to now, in most of the research work done on the effect of hydrogen on a Schottky barrier, the hydrogen was introduced into the semiconductor before metal deposition. This letter reports that hydrogen can be effectively introduced into the Schottky barriers (SBs) of Au/n-GaAs and Ti/n-GaAs by plasma hydrogen treatment (PHT) after metal deposition on [100] oriented n-GaAs substrates. The Schottky barrier height (SBH) of a SB containing hydrogen shows the zero/reverse bias annealing (ZBA/RBA) effect. ZBA makes the SBH decrease and RBA makes it increase. The variations in the SBHs are reversible. In order to obtain obvious ZBA/RBA effects, selection of the temperature for plasma hydrogen treatment is important, and it is indicated that 100-degrees-C for Au/n-GaAs and 150-degrees-C for Ti/n-GaAs are suitable temperatures. It is concluded from the analysis of experimental results that only the hydrogen located at or near the metal-semiconductor interface, rather than the hydrogen in the bulk of either the semiconductor or the metal, is responsible for the ZBA/RBA effect on SBH.

The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system

This work was supported by the National Science Foundation of China (60976008 and 60776015), the Special Funds for Major State Basic Research Project (973 program) of China (2006CB604907), and the 863 High Technology R&D Program of China (2007AA03Z402 and 2007AA03Z451). The authors express their appreciations to Prof. Yongliang Li (Analytical and Testing Center, Beijing Normal University) for FE-SEM measurements, to DrTieying Yang and Prof. Huanhua Wang (Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences) for XRD measurements and helpful discussions.

Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate

The Fermi-level pinning (FLP) at the metal/high-k interface and its dependence on the electron state density of the metal gate are investigated. It is found that the FLP is largely determined by the distortion of the vacuum level of the metal which is quantitatively ruled by the electron state density of the metal. The physical origin of the vacuum level distortion of the metal is attributed to an image charge of the interface charge in the metal. Such results indicate that the effective work function of the metal/high-k stack is also governed by the electron state density of the metal.

Electrical bistability and negative differential resistance in diodes based on silver nanoparticle-poly(N-vinylcarbazole) composites

An electrically bistable device has been fabricated using nanocomposite films consisting of silver nanoparticles and a semiconducting polymer by a simple spin-coating method. The current-voltage characteristics of the as-fabricated devices exhibit an obvious electrical bistability and negative differential resistance effect. The current ratio between the high-conducting state and low-conducting state can reach more than 103 at room temperature. The electrical bistability of the device is attributed to the electric-filed-induced charge transfer between the silver nanoparticles and the polymer, and the negative differential resistance behavior is related to the charge trapping in the silver nanoparticles. The results open up a simple approach to fabricate high quality electrically bistable devices by doping metal nanoparticles into polymer.

Near infrared lights emission of Ar-40(16+) impacting on metal surfaces

The highly charged ion Ar-40(16+) with the velocity (kinetic energy E (K)=150 keV, velocity V=8.5x10(5) m/s) smaller than Bohr velocity (V (Bohr)=2.9x10(6) m/s) was found to hove impacts on the surfaces of metals Ni, Mo, Au and Al, and the Ar atomic infrared light lines and X-rays spectra were simultaneously measured. The experimental results show that the highly charged ion that captures electrons is neutralized, and the multiply-excited hollow atom forms. The hollow atom cascade decay radiates lights from infrared to X-ray spectrum. The intensity of infrared lights shows that the metallic work functions play an important role in the neutralization process of highly charged ions during their interaction with metallic surfaces, which verifies the classical over-the-barrier model.

Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator

Organic thin-film transistors (OTFTs) using high dielectric constant material tantalum pentoxide (Ta2O5) and benzocyclobutenone (BCBO) derivatives as double-layer insulator were fabricated. Three metals with different work function, including Al (4.3 eV), Cr (4.5 eV) and Au (5.1 eV), were employed as gate electrodes to study the correlation between work function of gate metals and hysteresis characteristics of OTFTs. The devices with low work function metal Al or Cr as gate electrode exhibited high hysteresis (about 2.5 V threshold voltage shift). However, low hysteresis (about 0.7 V threshold voltage shift) OTFTs were attained based on high work function metal Au as gate electrode.

Design of Fluorescent Assays for Cyanide and Hydrogen Peroxide Based on the Inner Filter Effect of Metal Nanoparticles

We have demonstrated the design of a new type fluorescent assay based on the inner filter effect (IFE) of metal nanoparticles (NPs), which is conceptually different from the previously reported metal NPs-based fluorescent assays. With a high extinction coefficient and tunable plasmon absorption feature, metal NPs are expected to be capable of functioning as a powerful absorber to tune the emission of the fluorophore in the IFE-based fluorescent assays. In this work, we presented two proof-of-concept examples based on the IFE of Au NPs by choosing MDMO-PPV as a model fluorophore, whose fluorescence could be tuned by the absorbance of Au NPs with a much higher sensitivity than the corresponding absorbance approach.

Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics

In this work we present a permeable base transistor consisting of a 60 nm thick N,N'diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine layer or a 40 nm thick 2,6-diphenyl-indenofluorene layer as the emitter, a CalAl/Ca multilayer as the metal base, and p-Si as collector. In the base, the Ca layers are 5 nm thick and the Al layer was varied between 10 and 40 nm. the best results obtained with a 20 nm thick layer. The devices present common-base current gain with both organic layer and silicon acting as emitter, but there is only observable common-emitter current gain when the organic semiconductor acts as emitter. The obtained common-emitter current gain, similar to 2, is independent on collector-emitter voltage, base current and organic emitter in a reasonable wide interval. Air exposure or annealing of the base is necessary to achieve these characteristics, indicating that an oxide layer is beneficial to proper device operation.

Catalytic ring hydrogenation of benzoic acid with supported transition metal catalysts in scCO(2)

The ring hydrogenation of benzoic acid to cyclohexanecarboxylic acid over charcoal-supported transition metal catalysts in supercritical CO2 medium has been studied in the present work. The cyclohexanecarboxylic acid can be produced efficiently in supercritical CO2 at the low reaction temperature of 323 K. The presence of CO2 increases the reaction rate and several parameters have been discussed.

High-pressure sintering study of a novel hard material (W0.5Al0.5)C-0.5 without binder metal

A novel hard material of (W0.5Al0.5)C-0.5 has been successfully sintered under high-pressure (4.5 GPa). The influence of sintering time and temperature on the microstructure, Vickers microhardness and density of the as-prepared specimens are well described. Interestingly, sintering temperature has an amazing influence on the hardness, density and microstructure of the specimen while the sintering time does not. It is found that the most suitable sintering condition from our work is 1600 degrees C and 10 min under pressure of 4.5 GPa. The hardness and relative density of the as-prepared sample can reach 2340 kg mm(-2) and 98.62%, respectively. The cell parameters of the sintered specimen is found to be little smaller than that of the powder, which we propose is related to the high pressure.

Cleavage of nucleotides by lanthanide metal complexes

The present work revealed that the praseodymium( II ) complex of 2-carboxyethylgermanium sesquioxide (Ge-132) promotes the hydrolysis of the phosphodiester linkages of 3',5'-cyclic adenosine monophosphate (cAMP), 3' , 5'-cyclic deoxyadenosine monophosphate (dcAMP), 5'-adenosine monophosphate(5'-AMP) and 5'-deoxyadenosine monophosphate (5'-dAMP) under mild conditions. Both cAMP and dcAMP were hydrolyzed site-specifically, yielding predominantly 3'-monophosphates, the main products of the cleavage of 5'-AMP and 5'-dAMP included adenosine (Ado). deoxyadenosine (dAdo) and free phosphates respectively. A hydrolytic mechanism was proposed for cAMP, dcAMP, 5'-AMP and 5'-dAMP.

ART: An ontology based tool for the translation of papers into Semantic Web format

To be presented at SIG/ISMB07 ontology workshop: http://bio-ontologies.org.uk/index.php To be published in BMC Bioinformatics. Sponsorship: JISC

Tratamento de águas residuais

In this work, it is intended to expose the state of the art relating the use of microalgae in wastewater treatment. Nitrogen and phosphorous removal with microalgae is a common process. Biosorption by microlgae is an alternative to traditional treatment processes of metal ions removal. Neste trabalho pretende-se expor, de uma forma simples, o estado da arte no que diz respeito à utilização de microalgas para tratamento de águas residuais. São abordadas, com algum detalhe, as utilizações das microalgas para remoção de nutrientes e de metais pesadas de águas residuais.

Reabilitação fixa aparafusada Vs. reabilitação fixa cimentada

Projeto de Pós-Graduação/Dissertação apresentado à Universidade Fernando Pessoa como parte dos requisitos para obtenção do grau de Mestre em Medicina Dentária