944 resultados para logical structure method


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The Whitham modulation equations for the parameters of a periodic solution are derived using the generalized Lagrangian approach for the case of the damped Benjamin-Ono equation. The structure of the dispersive shock is considered in this method.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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One-dimensional nanostructures of KNbO3 have attracted a great interest in the scientific community, mainly because of their promising application as nanoelectromechanical systems (NEMS). However, the synthesis of KNbO3 structures becomes complex due to the natural tendency to form non-stoichiometric potassium niobates. In this context, we report on the crystallization of one-dimensional KNbO3 nanostructures through the reaction between Nb2O5 and KOH under microwave-assisted hydrothermal synthesis (M-H). The use of this synthesis method made possible a very fast synthesis of singlecrystalline powders. Based on SEM, TEM and XRD characterizations, the influence of the synthesis time and the reactants concentration in the structure and morphology of the resultant KNbO3 was established. The conditions that favor the crystallization of nanofingers were determined to be small amounts of Nb2O5 and short reaction times. (C) 2008 Elsevier B.V. All rights reserved.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Barium zirconium titanate (BZT) ceramics were prepared by mixed oxide method. X-ray diffraction showed the presence of a single phase while Raman scattering confirmed structural transitions as a function of different Zr/Ti ratio. The addition of Zr strongly influenced the crystal structure and electrical properties of the ceramics. A typical hysteresis loops were observed for all investigated compositions. BZT ceramics with 15 mol% Zr have shown a ferroelectric to paraelectric transition at around 77 degrees C. (C) 2007 Published by Elsevier B.V.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Strontium zirconate (SrZrO3) powders have been synthesized by the polymeric precursor method after heat treatment at different temperatures for 2 h in oxygen atmosphere. The decomposition of precursor powder was followed by thermogravimetric analysis, X-ray diffraction (XRD) and Fourier transform Raman (FT-Raman). The UV-vis absorption spectroscopy measurements suggested the presence of intermediary energy levels in the band gap of structurally disordered powders. XRD, Rietveld refinement and FT-Raman revealed that the powders are free of secondary phases and crystallizes in the orthorhombic structure. (C) 2007 Elsevier Masson SAS. All rights reserved.

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Single-phase Ba0.5Sr0.5(Ti0.80Sn0.20)O-3 (BST:Sn) powders with perovskite structure were prepared by the soft chemical method. Infrared data indicates that the BST:Sn powder is carbonate free while Raman analysis has shown that the transversal (TO) and longitudinal (LO) optical modes tend to disappear with tin addition. The electron diffraction pattern of the BST:Sn powder showed an interplanar distance of 3.94 angstrom characteristic of the pseudo-cubic structure. (c) 2007 Elsevier B.V. All rights reserved.

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Ba(Zr0.25Ti0.75)O-3(BZT) thin films prepared by the polymeric precursor method (PPM) were annealed at 500, 600, and 700 degrees C for 4h. All films crystallized in the perovskite structure present a crack-free microstructure. Dielectric properties of the BZT thin films were investigated as a function of frequency and applied voltage. The dielectric constant of the films were 36, 152 and 145 at 1 kHz, while the dielectric loss were 0.08, 0.08, and 0.12 at 1 MHz. (c) 2007 Elsevier B.V. All rights reserved.

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Polycrystalline Ba0.5Sr0.5(Ti0.80Sn0.20)O-3 (BST:Sn) thin films with a perovskite structure were prepared by the soft chemical method on a platinum-coated silicon substrate from spin-coating technique. The resulting thin films showed a dense structure with uniform grain size distribution. The dielectric constant of the films estimated from C-V curve is around 1134 and can be ascribed to a reduction in the oxygen vacancy concentration. The ferroelectric nature of the film indicated by butterfly-shaped C-V curves and confirmed by the hysteresis curve, showed remnant polarization of 14 mu C/cm(2) and coercive field of 74 kV/cm at frequency of 1 MHz. At the same frequency, the leakage current density at 1.0 V is equal to 1.5 x 10(-7) A/cm(2). This work clearly reveals the highly promising potential of BST:Sn for application in memory devices. (c) 2006 Elsevier B.V. All rights reserved.