Temperature dependence of dielectric properties for Ba(Zr0.25Ti0.75)O-3 thin films obtained from the soft chemical method
| Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
|---|---|
| Data(s) |
20/05/2014
20/05/2014
15/10/2007
|
| Resumo |
Ba(Zr0.25Ti0.75)O-3(BZT) thin films prepared by the polymeric precursor method (PPM) were annealed at 500, 600, and 700 degrees C for 4h. All films crystallized in the perovskite structure present a crack-free microstructure. Dielectric properties of the BZT thin films were investigated as a function of frequency and applied voltage. The dielectric constant of the films were 36, 152 and 145 at 1 kHz, while the dielectric loss were 0.08, 0.08, and 0.12 at 1 MHz. (c) 2007 Elsevier B.V. All rights reserved. |
| Formato |
293-297 |
| Identificador |
http://dx.doi.org/10.1016/j.matchemphys.2007.04.065 Materials Chemistry and Physics. Lausanne: Elsevier B.V. Sa, v. 105, n. 2-3, p. 293-297, 2007. 0254-0584 http://hdl.handle.net/11449/25390 10.1016/j.matchemphys.2007.04.065 WOS:000250278300029 |
| Idioma(s) |
eng |
| Publicador |
Elsevier B.V. |
| Relação |
Materials Chemistry and Physics |
| Direitos |
closedAccess |
| Palavras-Chave | #dielectric properties #BZT #thin films #temperature dependence |
| Tipo |
info:eu-repo/semantics/article |
