Filossilicatos: efeitos no crescimento e na nutrição de plantas de milho e no teor de silício do solo

Importance of silicon fertilization is related to the benefits that silicon is able to promote tolerance to heavy metals, reduce the incidence of pests and diseases, increased productivity, drought tolerance, among others. The objective of this study was to evaluate the phyllosilicates effect on biomass formation, nutrients and silicon on the early stages of corn plants compared to wollastonite. Experiment was installed and conducted in a greenhouse located at the Universidade Estadual Paulista, UNESP, in Registro, SP. Consisting of 10 treatments established in a randomized block design in scheme factorial (2 x 5), with five replications. First factor corresponds to the two types of soil (Oxisol and Ultisol) and the second factor, five treatments (control, 0 kg ha-1 Si; wollastonite W13, 13 kg ha-1 Si; wollastonite W26, 26 kg ha-1 Si; phyllosilicates F13, 13 kg ha-1 Si; phyllosilicates F26, 26 kg ha-1 Si). In Ultisol, phyllosilicates increased production of fresh, dry biomass and silicon content in shoots of corn compared to treatment with wollastonite and control. Highest Si content compared to control (6.2 g kg-1) was obtained with 13 kg ha-1 Si of phyllosilicates (9.8 g kg-1). The greatest accumulation mass and Si in plants by applying phyllosilicates were observed in Ultisol, although this display Si content higher than Oxisol.

Aluminium phosphide as a eutectic grain nucleus in hypoeutectic Al-Si alloys

Aluminium phosphide (AlP) particles arc often suggested to be the nucleation site for eutectic silicon in Al-Si alloys, since both the crystal structure and lattice parameter of AlP (crystal structure: cubic K(4) over bar m; lattice parameter: 5.421 Angstrom) are close to that of silicon (cubic Fd3m, 5.431 Angstrom), and the melting point is higher than the Al-Si eutectic temperature. However, the crystallographic relationships between AlP particles and the surrounding eutectic silicon are seldom reported due to the difficulty in analysing the AlP particles, which react with water during sample preparation for polishing. in this study, the orientation relationships between AlP and Si are analysed by transmission electron microscopy using focused ion-beam milling for sample preparation to investigate the nucleation mechanism of eutectic silicon on AlP. The results show a clear and direct lattice relationship between centrally located AlP particles and the surrounding silicon in the hypoeutectic Al-Si alloy.

Quelle place pour l'écoute en travail social? : une analyse écosystémique des pratiques d'écoute

En travail social, l'écoute est un élément essentiel dans la pratique. Les travailleurs sociaux sont constamment appelés à être à l'écoute des difficultés et de la souffrance des personnes avec qui ils interviennent, mais cette notion en travail social est très peu étudiée, particulièrement au Québec. Cette recherche vise donc à explorer comment les travailleurs sociaux décrivent l'écoute et la place qui lui est accordée dans la pratique. À partir d'une perspective écosystémique, une analyse des pratiques d'écoute est réalisée à différents niveaux : individuel et relationnel, professionnel et organisationnel et finalement, au niveau institutionnel. Les données recueillies qualitativement auprès de travailleurs sociaux, par l'entremise de deux groupes de réflexion et de six entrevues individuelles, permettent de démontrer qu'il existe des similitudes dans leurs conceptions de l'écoute. Par exemple, l'écoute est abordée principalement en lien avec des attitudes reliées à des savoir-être (respect, disponibilité, non-jugement, présence à soi et à l'autre, écoute de soi...). Mais, on dénote aussi plusieurs éléments distinctifs, notamment en ce qui à trait aux finalités de l'écoute, où certaines considèrent la pratique d'écoute comme un moyen d'identifier les besoins, comme une intervention en soi, alors que d'autres la considèrent comme un outil pour récolter de l'information. Également, les résultats démontrent que les obstacles à l'écoute sont nombreux et se situent à tous les niveaux. Toutefois, ce sont les niveaux organisationnel et institutionnel qui ressortent le plus, en ce sens que bien que les travailleuses souhaitent être à l'écoute, les structures organisationnelles et institutionnelles donnent rarement le temps et l'occasion de le faire. Bref, ce projet révèle le peu de place accordée à l'écoute et laisse plusieurs questions en suspens auxquelles il serait opportun de répondre dans des études ultérieures.

Compact three-dimensional silicon termination solutions for high voltage SOI SuperJunction

This paper demonstrates and discusses novel "three dimensional" silicon based junction isolation/termination solutions suitable for high density ultra-low-resistance Lateral Super-Junction structures. The proposed designs are both compact and effective in safely distributing the electrostatic potential away from the active device area. The designs are based on the utilization of existing layers in the device fabrication line, hence resulting in no extra complexity or cost increase. The study/demonstration is done through extensive experimental measurements and numerical simulations. © 2012 IEEE.

Polychromatic single-shot spectroscopy on SOI-FET trapped electrons

The behavior of trapped electrons, in a dielectric close to the channel of a silicon SOI-FET, is studied by cryogenic microwave spectroscopy. On-resonance microwave excitation causes one of these trapped electrons to undergo spatial Rabi oscillations between widely separated trap sites. This charge displacement causes a change in the drain current of the transistor, resulting in high quality factor resonances in continuous wave spectroscopy. The potential of this effect for non-classical information processing is investigated through polychromatic single-shot spectroscopy, using on-resonance and difference frequencies. Interaction between different trapped electrons is seen in the post excitation behavior and the possibilities of quantum gate operations are discussed. © The Electrochemical Society.

Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET

The mobility of channel electron, for partially depleted Sol nMOSFET in this paper, decreases with the increase of implanted fluorine dose in buried oxide layer. But, the experimental results also show that it is larger for the transistor corresponding to the lowest implantation dose than no implanted fluorine in buried layer. It is explained in tern-is of a "lubricant" model. Mien fluorine atoms are implanted in the top silicon layer, the mobility is the largest. In addition, a positive shift of threshold voltage has also been observed for the transistors fabricated on the Sol wafers processed by the implantation of fluorine. The causes of all the above results are discussed.

Ultralow Silicon Substrate Noise Crosstalk Using Metal Faraday Cages in an SOI Technology

In mixed signal integrated circuits noise from the digital circuitry can upset the sensitive analogue circuitry. The Faraday cage structure reported here is based on the unique ground plane SOI technology developed some of the authors. The suppression of crosstalk achieved is an order of magnitude greater than that previously published for frequencies up to 10 GHz. The significance of the technology will be even greater as the operating frequency is increased. This collaborative EPSRC project was judge as tending to outstanding.

Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures

We report the observation of the insulator-to-metal transition in crystalline silicon samples supersaturated with vanadium. Ion implantation followed by pulsed laser melting and rapid resolidification produce high quality single-crystalline silicon samples with vanadium concentrations that exceed equilibrium values in more than 5 orders of magnitude. Temperature-dependent analysis of the conductivity and Hall mobility values for temperatures from 10K to 300K indicate that a transition from an insulating to a metallic phase is obtained at a vanadium concentration between 1.1 × 10^(20) and 1.3 × 10^(21) cm^(−3) . Samples in the insulating phase present a variable-range hopping transport mechanism with a Coulomb gap at the Fermi energy level. Electron wave function localization length increases from 61 to 82 nm as the vanadium concentration increases in the films, supporting the theory of impurity band merging from delocalization of levels states. On the metallic phase, electronic transport present a dispersion mechanism related with the Kondo effect, suggesting the presence of local magnetic moments in the vanadium supersaturated silicon material.

Engineering interfacial silicon dioxide for improved metal-insulator-semiconductor silicon photoanode water splitting performance

Silicon photoanodes protected by atomic layer deposited (ALD) TiO2 show promise as components of water splitting devices that may enable the large-scale production of solar fuels and chemicals. Minimizing the resistance of the oxide corrosion protection layer is essential for fabricating efficient devices with good fill factor. Recent literature reports have shown that the interfacial SiO2 layer, interposed between the protective ALD-TiO2 and the Si anode, acts as a tunnel oxide that limits hole conduction from the photoabsorbing substrate to the surface oxygen evolution catalyst. Herein, we report a significant reduction of bilayer resistance, achieved by forming stable, ultrathin (<1.3 nm) SiO2 layers, allowing fabrication of water splitting photoanodes with hole conductances near the maximum achievable with the given catalyst and Si substrate. Three methods for controlling the SiO2 interlayer thickness on the Si(100) surface for ALD-TiO2 protected anodes were employed: (1) TiO2 deposition directly on an HF-etched Si(100) surface, (2) TiO2 deposition after SiO2 atomic layer deposition on an HF-etched Si(100) surface, and (3) oxygen scavenging, post-TiO2 deposition to decompose the SiO2 layer using a Ti overlayer. Each of these methods provides a progressively superior means of reliably thinning the interfacial SiO2 layer, enabling the fabrication of efficient and stable water oxidation silicon anodes.

Selective growth of carbon nanotubes on bare silicon : MWNT sinthesys on patterned substrates without predeposition of metal catalyst

Carbon nanotubes (CNTs) are expected to become the ideal constituent of many technologes, in particular for future generation electronics. This considerable interest is due to their unique electrical and mechanical properties. They show indeed super-high current-carrying capacity, ballistic electron transport and good field-emission properties. Then, these superior features make CNTs the most promising building blocks for electronic devices, as organic solar cells and organic light emitting devices (OLED). By using Focused Ion Beam (FIB) patterning it is possible to a obtain a high control on position, relative distances and diameter of CNTs. The present work shows how to grow three-dimensional architecture made of vertical-aligned CNTs directly on silicon. Thanks to the higher activity of a pre-patterned surface the synthesis process results very quick, cheap and simple. Such large area growths of CNTs could be used in preliminary test for application as electrodes for organic solar cells.

Towards controlled growth of carbon nanotubes from germanium on nanoindented silicon substrates

In this paper, we report on a metal-catalyst-free synthesis of carbon nanotubes (CNTs) on a pre-patterned Si(001) surface. Arrays of triangular-shaped holes were created by nanoindentation in specific sites of the sample. After germanium deposition and chemical vapor deposition (CVD) of acetylene, a few CNTs nucleated and grew from germanium nanoparticles. These results illustrate that it is possible to control the growth of CNTs without the use of any metal catalyst. By leading the assembly of Ge nanoparticles with a patterning technique, a precise control over the growth order is also attainable.