Effect of material properties on stress-induced defect generation in trenched SOI
| Data(s) |
01/10/2000
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|---|---|
| Identificador |
http://www.scopus.com/inward/record.url?scp=0034446750&partnerID=8YFLogxK |
| Idioma(s) |
eng |
| Direitos |
info:eu-repo/semantics/restrictedAccess |
| Fonte |
Nevin , W A , Somasundram , K , Blackstone , S , Magee , S & Paxton , A 2000 , ' Effect of material properties on stress-induced defect generation in trenched SOI ' Paper presented at 6th Symposium on High Purity Silicon held at the 198th Meeting of the Electrochemical-Society , Phoenix Arizona , United States , 01/10/2000 - 01/10/2000 , pp. 524-531 . |
| Tipo |
conferenceObject |
