Glass-polymer superlattice for integrated optics

Glass and polymer interstacked superlattice like nanolayers were fabricated by nanosecond-pulsed laser deposition with a 193-nm-ultraviolet laser. The individual layer thickness of this highly transparent thin film could be scaled down to 2 nm, proving a near atomic scale deposition of complex multilayered optical and electronic materials. The layers were selectively doped with Er3\+ and Eu3\+ ions, making it optically active and targeted for integrated sensor application. © The Authors.

Molecular cloning and expression pattern of 14 kDa apolipoprotein in orange-spotted grouper, Epinephelus coioides

A novel fish-specific apolipoprotein (apo-14 kDa) has been recently cloned from eel and pufferfish. However, its expression pattern has not been elucidated. in this study, EcApo-14 has been screened from hypothalamic cDNA library of male orange-spotted grouper, which shows 62.9%, 51%, 46.9%, 43.2%, and 31.9% identities to Apo-14 of European flounder, pufferfish, Japanese eel, gibel carp, and grass carp, respectively. RT-PCR analysis reveals that this gene is first transcribed in neurula embryos and maintains a relatively stable expression level during the following embryogenesis. EcApo-14 transcripts are at a very high level during embryonic and early larval development in the yolk syncytial layer (YSL), and decrease in YSL and form intense staining in liver at 3 days after hatching. In adult tissues, EcApo-14 is predominantly expressed in liver and brain. The data suggested that EcApo-14 might play an important role in liver and brain morphogenesis and growth. (c) 2005 Elsevier Inc. All rights reserved.

Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition

We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees C without thermal annealing and allowing the integration with standard silicon processes. Due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between Ge and Si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial Ge films. The diode with a responsivity of 0.23 A/W at 1.55 mu m wavelength and a bulk dark current density of 10 mA/cm(2) is demonstrated. These diodes with high performances and full compatibility with the CMOS processes enable monolithically integrating microphotonics and microelectronics on the same chip.

Elimination of environmental noise in interferometric wavelength shift demodulation for dynamic fiber Bragg grating sensor array

We present a novel reference compensation method for eliminating environmental noise in interferometric wavelength shift demodulation for dynamic fiber Bragg grating (FBG) sensors. By employing a shielded wavelength-division-multiplexed reference FBG in the system the environmental noise is mea, sured from the reference channel, and then subtracted from the demodulation result of each sensor channel. An approximate 40 dB reduction of the environmental noise has been experimentally achieved over a frequency range from 20 Hz to 2 kHz. This method is also suitable for the elimination of broadband environmental noise. The corresponding FBG sensor array system proposed in this paper has shown a wave-length resolution of 7 x 10(-4) pm/root Hz. (c) 2009 Elsevier B.V. All rights reserved.

Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: the role of localization length

In this article, we report a combined experimental and theoretical study on the luminescence dynamics of localized carriers in disordered InGaN/GaN quantum wells. The luminescence intensity of localized carriers is found to exhibit an unusual non-exponential decay. Adopting a new model taking the radiative recombination and phonon-assisted hopping transition between different localized states into account, which was recently developed by Rubel et al., the non-exponential decay behavior of the carriers can be quantitatively interpreted. Combining with precise structure characterization, the theoretical simulations show that the localization length of localized carriers is a key parameter governing their luminescence decay dynamics. (c) 2006 Optical Society of America.

Tunable Fano resonance in photonic crystal slabs

A three dimensional analysis of a special class of anisotropic materials is presented. We introduce an extension of the Scattering Matrix Method (SMM) to investigate the behavior of anisotropic Photonic Crystal Slabs (PhCS) subject to external radiation. We show how the Fano effect can play a fundamental role in the realization of tunable optical devices. Moreover, we show how to utilize electron injection, electric field and temperature as parameters to control the Fano resonance shift in both isotropic and anisotropic materials as Si and Potassium Titanium Oxide Phosphate (KTP). We will see that because Fano modes are sensitive and controllable, a broad range of applications can be considered. (c) 2006 Optical Society of America

A 2x2 optical switch based on plasma dispersion effect in silicon-on-insulator

Based on Mach-Zehnder interferometer (MZI) structure, a 2 x 2 optical switch is fabricated on SOI wafer. Modulation of the refractive index of MZI arms is achieved through free carriers plasma dispersion effect of silicon. The device presents an insertion loss as low as 3.44 dB and a response time as small as 300 ns. The crosstalk and extinction ratio are -15.54 and 14.9 dB, respectively. Detailed analysis and explanation of the operating behaviors are also presented. (C) 2005 Elsevier B.V. All rights reserved.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

Fabrication of a novel silica PLC hybrid integrated triplexer

A new-style silica planar lightwave circuit (PLC) hybrid integrated triplexer, which can demultiplex 1490-nm download data and 1550-nm download analog signals, as well as transmit 1310-nm upload data, is presented. It combines SiO2 arrayed waveguide gratings (AWGs) with integrated photodetectors (PDs) and a high performance laser diode (LD). The SiO2 AWGs realize the three-wavelength coarse wavelength-division multiplexing (CWDM). The crosstalk is less than 40 dB between the 1490- and 1550-nm channels, and less than 45 dB between 1310- and 1490- or 1550-nm channels. For the static performances of the integrated triplexer, its upload output power is 0.4 mW, and the download output photo-generated current is 76 A. In the small-signal measurement, the upstream 3-dB bandwidth of the triplexer is 4 GHz, while the downstream 3-dB bandwidths of both the analog and digital sections reach 1.9 GHz.

Two-color quantum well infrared photodetector simultaneously working at 10-14 mu m

We have demonstrated a two-color quantum well infrared photodetector (QWIP) exhibiting simultaneous photoresponse with cutoff wavelengths at 11.8 and 14.5 mu m, respectively. Strong photocurrent signals are observed at temperature of 77 K. The simultaneous two-color photoresponse is achieved by utilizing a simple design by broadening the width of the quantum well and selecting an appropriate doping density. The two peaks are attributed to the intersubband transitions from the ground state to the first excited state (bound state) and to the fifth excited state (continuum state), respectively.

金属溶剂萃取的热力学研究 1.Er(NO_3)_3-TB -C_6H_(14) 体系2.CuSo_4-氨化P_(50)-16H_(14)体系

本文在溶液理论的基础上，用纯热力学方法研究了中性磷萃取剂-金属体系（TBP-Er(no_3)_3）和氨化P_(50)-金属体系（P_(50)-cus04）的平衡计算模型。对于TBP体系有下列萃取平衡Er(NO_3)_3 (a) + 3TBP_((0)) <-> Er(NO_3)_3. 3TBP_((0))对于氨化P50体系，在萃取剂大量过量下有下的平衡Er(NO_3)_3 (a) + 3TBP_((0)) <-> Er(NO_3)_3. 3TBP(0)对氧化P50体系，在萃取剂大量过量下有下的平衡Cu_((a))~(2+) + partial deriv H_2R_2_((0)) <-> Cu(HR_2)_2 + 2H~+。用Scatchard-hildebrand模型预测了C_6H_(24)-TBP二元体系的担力学性质，以近似地用于H_2O - 16H_4 - TBP三之体系，减少了实验工作量。用气相色谱法求得了三之体系H_2O - (6H_(14) - P_(50))的热力学平衡数据，由于改进了进样系统，使实验误差<2%。对二体系的水相，均采用Pitzer理论求算γ_(Er(WO_3)_3)，和γ_(Cn~(2+))。对有机相，用热力学关系求出了水，正已烷，萃取剂，的活度系数。实验结果用Scatchard-Hildebrand模型进行关联。使计算机上进行回归处理，求得萃取反应的热力学平衡常数Ka和萃合物的活度系数。计算中，将有效平衡常数进一步分解，以提出显函数项，并在图解数分中改进了计算方法，使得每条萃取等温成都解得到合理的积分值。Schatchard-Hildebrand模型能在较宽的有机相浓度区域应用。所得到的端值常数，可定性地分析各组分的相互作用。

808-nm fiber coupled module with a CW output power up to 130 W

A fiber coupled module is fabricated with integrating the emitting light from four laser diode bars into multimode fiber bundle. The continuous wave (CW) output power of the module is about 130 W with a coupling efficiency of around 80%. The output power is very stable after the temperature cycling and vibration test. No apparent power decrease has been observed as the device working continuously for 500 h.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.