Shot noise anomalies in elastic nondegenerate diffusive conductors

We present a theoretical investigation of shot-noise properties in nondegenerate elastic diffusive conductors. Both Monte Carlo simulations and analytical approaches are used. Two interesting phenomena are found: (i) the display of enhanced shot noise for given energy dependences of the scattering time, and (ii) the recovery of full shot noise for asymptotic high applied bias. The first phenomenon is associated with the onset of negative differential conductivity in energy space that drives the system towards a dynamical electrical instability in excellent agreement with analytical predictions. The enhancement is found to be strongly amplified when the dimensionality in momentum space is lowered from three to two dimensions. The second phenomenon is due to the suppression of the effects of long-range Coulomb correlations that takes place when the transit time becomes the shortest time scale in the system, and is common to both elastic and inelastic nondegenerate diffusive conductors. These phenomena shed different light in the understanding of the anomalous behavior of shot noise in mesoscopic conductors, which is a signature of correlations among different current pulses.

Photoacoustic investigation of the optical and thermal properties of selected amorphous chalcogenide semiconductors

This thesis work has mainly concentrated on the investigation of the ,optical and thermal properties of binary semiconducting chalcogenide glasses belonging to the AivB¥5x and AZBXEX families. The technique used for these studies is a relatively new one namely, the photoacoustic (PA) technique. This technique is based on the detection of acoustic signal produced in an enclosed volume when the sample is irradiated by an intensity modulated radiation. The signal produced depends upon the optical properties of the sample, and the thermal properties of the sample, backing material and the surrounding gas. For the present studies an efficient signal beam gas-microphone PA spectrometer, consisting of a high power Xenon lamp, monochromator, light beam chopper, PA cell with microphone and lock-in amplifier, has been set up. Two PA cells have been fabricated: one for room temperature measurements and another for measurements at high temperatures. With the high temperature PA cell measurements can be taken upto 250°C. Provisions are incorporated. in both the cells to change the volume and to use different backing materials for the sample. The cells have been calibrated by measuring the frequency response of the cells using carbon black as the sample

Multifractal dimension of chaotic attractors in a driven semiconductor superlattice

The multifractal dimension of chaotic attractors has been studied in a weakly coupled superlattice driven by an incommensurate sinusoidal voltage as a function of the driving voltage amplitude. The derived multifractal dimension for the observed bifurcation sequence shows different characteristics for chaotic, quasiperiodic, and frequency-locked attractors. In the chaotic regime, strange attractors are observed. Even in the quasiperiodic regime, attractors with a certain degree of strangeness may exist. From the observed multifractal dimensions, the deterministic nature of the chaotic oscillations is clearly identified.

Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport

We present a microscopic analysis of shot-noise suppression due to long-range Coulomb interaction in semiconductor devices under ballistic transport conditions. An ensemble Monte Carlo simulator self-consistently coupled with a Poisson solver is used for the calculations. A wide range of injection-rate densities leading to different degrees of suppression is investigated. A sharp tendency of noise suppression at increasing injection densities is found to scale with a dimensionless Debye length related to the importance of space-charge effects in the structure.

Chaotic dynamics of electric-field domains in periodically driven superlattices

Self-sustained time-dependent current oscillations under dc voltage bias have been observed in recent experiments on n-doped semiconductor superlattices with sequential resonant tunneling. The current oscillations are caused by the motion and recycling of the domain wall separating low- and high-electric-field regions of the superlattice, as the analysis of a discrete drift model shows and experimental evidence supports. Numerical simulation shows that different nonlinear dynamical regimes of the domain wall appear when an external microwave signal is superimposed on the dc bias and its driving frequency and driving amplitude vary. On the frequency-amplitude parameter plane, there are regions of entrainment and quasiperiodicity forming Arnold tongues. Chaos is demonstrated to appear at the boundaries of the tongues and in the regions where they overlap. Coexistence of up to four electric-field domains randomly nucleated in space is detected under ac+dc driving.

Chaos in resonant-tunneling superlattices

Spatiotemporal chaos is predicted to occur in n-doped semiconductor superlattices with sequential resonant tunneling as their main charge transport mechanism. Under dc voltage bias, undamped time-dependent oscillations of the current (due to the motion and recycling of electric field domain walls) have been observed in recent experiments. Chaos is the result of forcing this natural oscillation by means of an appropriate external microwave signal.

Investigation of structural, optical and electrical properties and valence band splitting in cu-ln-se compounds

Investigations on thin films that started decades back due to scientific curiosity in the properties of a two-dimensional solid, has developed into a leading research field in recent years due to the ever expanding applications of the thin films in the fann of a variety of active and passive microminiaturized components and devices, solar cells, radiation sowces and detectors, magnetic memory devices, interference filters, refection and antireflection coatings etc. [1]. The recent environment and energy resource concerns have aroused an enonnous interest in the study of materials in thin film form suitable for renewable energy sources such as photovoltaic devices. Recognition of the immense potential applications of the chalcopyrites that can fonn homojunctions or heterojunctions for solar cell fabrication has attracted many researchers to extensive and intense research on them. In this thesis, we have started with studies performed on CuInSe, thin films, a technologically well recognized compound belonging to the l•ill-VI family of semiconductors and have riveted on investigations on the preparation and characterization of compoWlds Culn3Se5. Culn5Seg and CuIn7Se12, an interesting group of compounds related to CuInSe2 called Ordered Vacancy Compounds, having promising applications in photovoltaic devices. A pioneering work attempted on preparing and characterizing the compound Culn7Sel2 is detailed in the chapters on OVC's. Investigation on valence band splitting in avc's have also been attempted for the first time and included as the last chapter in the thesis. Some of the salient features of the chalcopyrite c.ompounds are given in the next section .of this introductory chapter.

Mn2þ-induced room-temperature ferromagnetism and spin-glass behavior in hydrothermally grown Mn-doped ZnO nanorods

The magnetic properties of Mn-doped ZnO (ZnO:Mn) nanorods grown by hydrothermal process at a temperature of 200 8C and a growth time of 3 h have been studied. The samples were characterized by using powder X-ray diffraction with Rietveld refinement, scanning electron microscopy, energy-dispersive X-ray analysis and SQUID magnetometry. Mn (3 wt%) and (5 wt%)-doped ZnO samples exhibit paramagnetic and ferromagnetic behavior, respectively, at room temperature. The spin-glass behavior is observed from the samples with respect to the decrease of temperature. At 10 K, both samples exhibit a hysteresis loop with relatively low coercivity. The room-temperature ferromagnetism in 5 wt% Mn-doped ZnO nanorods is attributed to the increase in the specific area of grain boundaries, interaction between dopant Mn2þ ions substituted at Zn2þ site and the interaction between Mn2þ ions and Zn2þ ions from the ZnO host lattice

Fluoreszenz und Lasertätigkeit in dünnen amorphen Schichten von Spirobifluorenderivaten

Es wurden die optischen Eigenschaften einiger Spirooligophenylverbindungen untersucht. Bei den Verbindungen handelte es sich um lineare und verzweigte Derivate des Spirobifluorens. Es wurden dünne amorphe Schichten der Verbindungen mittels spincoating und Vakuumverdampfen (OMBD) auf unterschiedlichen Substraten hergestellt. Mit spektroskopischer Ellipsometrie konnten die Schichtdicken und optische Konstanten der dünnen Schichten bestimmt werden. Dafür sind die Extinktionsspektren mit Tauc-Lorentz-Oszillatoren modelliert worden. Auf diese Weise ließen sich die optischen Konstanten der amorphen Filme besser beschreiben als mit den üblicherweise verwendeten Gauß-Oszillatoren. In dünnen Filmen von Spirosexiphenyl konnte uniaxiale Anisotropie nachgewiesen werden. Im Bereich der pie,pie*-Bande beträgt das Verhältnis des ordentlichen zum außerordentlichen Extinktionskoeffizienten 2.09. Mit einer Integrationskugel wurden die absoluten Quantenausbeuten der Fluoreszenz in festen Filmen bestimmt. Dafür ist ein vereinfachtes Verfahren der Auswertung entwickelt worden. Im Vergleich der untersuchten Substanzen zeigt sich, dass die Verbindungen mit dem Sexiphenyl-Chromophor höhere Quantenausbeuten im Festkörper haben (31 % - 48 %) als die Verbindungen mit Quaterphenyl als Chromophor (15 % - 30 %). In den beiden Klassen haben jeweils die sterisch anspruchsvollen Octopusvarianten die höchsten Festkörperquantenausbeuten. Durch verdünnen mit m,m-Spirosexiphenyl konnte die Quantenausbeute von p,p-Spirosexiphenyl in dünnen festen Filmen bis auf 65 % (95 % m,m- und 5 % p,p-Spirosexiphenyl) gesteigert werden. Eine Korrelation der Quantenausbeuten in Lösung und im festen, unverdünnten Film wurde nicht festgestellt. Als dünne Filme in Wellenleitergeometrie zeigen Spirooligophenyle bei optischer Anregung verstärkte spontane Emission (ASE). Dies manifestiert sich in einer Einengung des Emissionsspektrums mit zunehmender Pumpleistungsdichte. Auch für stimulierte Emission sind die Verbindungen mit Sexiphenylchromophor besser geeignet. Die niedrigste Schwelle in einer unverdünnten Reinsubstanz wurde mit 0.23 µJ/cm² in einer aufgeschleuderten Schicht Spirosexiphenyl gemessen. Auch 4-Spiro³, Spiro-SPO und Octo-2 zeigten niedrige ASE-Schwellen von 0.45 µJ/cm², 0.45 µJ/cm² und 0.5 µJ/cm². Die ASE-Schwellwerte von Spiroquaterphenyl und seinen beiden Derivaten Methoxyspiroquaterphenyl und Octo-1 sind mit 1.8 µJ/cm², 1.4 µJ/cm² und 1.2 µJ/cm² höher als die der Sexiphenylderivate. Im gemischten System aus m,m- und p,p-Spirosexiphenyl konnte die ASE-Schwelle noch weiter gesenkt werden. Bei einer Konzentration von 5 % p,p-Spirosexiphenyl wurde ein Schwellwert von nur 100 nJ/cm² bestimmt. Durch Dotierung mit unterschiedlichen Farbstoffen in Spirosexiphenyl als Matrix konnte ASE fast über den gesamten sichtbaren Spektralbereich gezeigt werden. Mit der „variable Streifenlänge“ (VSL-) -Methode wurden die pumpleistungsabhängigen Gainspektren dünner aufgedampfter Proben gemessen. Hieraus konnten die Wechselwirkungsquerschnitte der stimulierten Emission der Substanzen ermittelt werden. In Übereinstimmung mit den Verhältnissen bei den Festkörperfluoreszenzquantenausbeuten und den Schwellwerten der ASE sind auch bei den Gainkoeffizienten reiner Spirooligophenyle die besten Werte bei den Sexiphenylderivaten gefunden worden. Der Wirkungsquerschnitt der stimulierten Emission beträgt für Methylspiroquaterphenyl und Octo-1 ca. 1.8*10^-17 cm². Für Spiro-SPO und Spirosexiphenyl wurden Wirkungsquerschnitte von 7.5*10^-17 cm² bzw. 9.2*10^-17 cm² bestimmt. Noch etwas größer waren die Werte im gemischten System aus m,m- und p,p-Spirosexiphenyl (1.1*10^-16 cm²) und für DPAVB dotiert in Spirosexiphenyl (1.4*10^-16 cm²). Der höchste Maximalwert des Gainkoeffizienten von 328 cm-1 bei einer absorbierten Pumpenergiedichte von 149 µJ/cm² wurde mit Spirosexiphenyl erreicht. Abschließend wurden DFB-Laser-Strukturen mit reinen und dotierten Spirooligophenylverbindungen als aktiven Materialien vorgestellt. Mit Spiroterphenyl konnte ein DFB-Laser mit der bisher kürzesten Emissionswellenlänge (361.9 nm) in einem organischen Festkörperlaser realisiert werden. Mit reinen Spirooligophenylverbindungen und Mischungen daraus habe ich DFB-Lasing bei Wellenlängen zwischen 361.9 nm und 479 nm aufgezeigt. Durch Dotierung mit DPAVB wurde der Bereich der erreichbaren Wellenlängen bis 536 nm erweitert, bei gleichzeitiger Erniedrigung der Schwellenergiedichten für Lasertätigkeit. Bei Emissionswellenlängen von 495 nm bis 536 nm blieb die Laserschwelle zwischen 0.8 µJ/cm² und 1.1 µJ/cm². Diese Werte sind für DFB-Laser zweiter Ordnung sehr niedrig und geben Anlass zu glauben, dass sich mit DFB-Strukturen erster Ordnung Schwellen im Nanojoule Bereich erzielen lassen. Damit würde man den Bedingungen für elektrisch gepumpten Betrieb nahe kommen.

THz Plasma Waves in Field-Effect-Transistors: A Monte Carlo Study

Sensing with electromagnetic waves having frequencies in the Terahertz-range is a very attractive investigative method with applications in fundamental research and industrial settings. Up to now, a lot of sources and detectors are available. However, most of these systems are bulky and have to be used in controllable environments such as laboratories. In 1993 Dyakonov and Shur suggested that plasma waves developing in field-effect-transistors can be used to emit and detect THz-radiation. Later on, it was shown that these plasma waves lead to rectification and allows for building efficient detectors. In contrast to the prediction that these plasma waves lead to new promising solid-state sources, only a few weak sources are known up to now. This work studies THz plasma waves in semiconductor devices using the Monte Carlo method in order to resolve this issue. A fast Monte Carlo solver was developed implementing a nonparabolic bandstructure representation of the used semiconductors. By investigating simplified field-effect-transistors it was found that the plasma frequency follows under equilibrium conditions the analytical predictions. However, no current oscillations were found at room temperature or with a current flowing in the channel. For more complex structures, consisting of ungated and gated regions, it was found that the plasma frequency does not follow the value predicted by the dispersion relation of the gated nor the ungated device.

Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05in thin enough layers strain inhomogeneities are dominant. This evolution in line with layer thickness is due to the atomic diffusion at the surface during growth, induced by the strain inhomogeneities that arise from stress relaxation. In consequence, the strain variations present in the layer are converted into composition variations during growth. This process is energetically favorable as it diminishes elastic energy. An additional support to this hypothesis is given by a clear proportionality between the magnitude of the composition variations and the mean strain

Characteristics of silica-rich pedofeatures in a buried paleosol

Whitish and whitish-light brown milky-like textural pedofeatures and impregnations were found in the voids and the matrix of buried paleosols older than 2.7 million years in a site in Sardinia, Italy. The pedofeatures were described and analysed using micromorphology, X-ray diffraction and microprobe techniques, and their spatial distribution correlated with field evidence. The suite of analyses showed that the main components of the pedofeatures were more or less ordered silica phases. As well as forming a matrix cement, these pedofeatures also occurred as coatings and infillings in pores. Significant amounts of alumina and, less, Mg, Ca and Fe were also present in the pedofeatures, possibly in the form of silicate coatings and inclusions/impurities, or alumino-silicates of the adjacent soil matrix. A number of hypotheses are drawn on the possible mechanisms of formation of these silica-rich pedofeatures, including the possibility of prolonged weathering of volcanic materials and the resulting formation of colloids and more or less ordered silica phases, with successive dehydration and progressive ordering of phases during the at least 2.5 million years. (C) 2003 Elsevier B.V. All rights reserved.

Characteristics of silica-rich pedofeatures in a buried paleosol

Whitish and whitish-light brown milky-like textural pedofeatures and impregnations were found in the voids and the matrix of buried paleosols older than 2.7 million years in a site in Sardinia, Italy. The pedofeatures were described and analysed using micromorphology, X-ray diffraction and microprobe techniques, and their spatial distribution correlated with field evidence. The suite of analyses showed that the main components of the pedofeatures were more or less ordered silica phases. As well as forming a matrix cement, these pedofeatures also occurred as coatings and infillings in pores. Significant amounts of alumina and, less, Mg, Ca and Fe were also present in the pedofeatures, possibly in the form of silicate coatings and inclusions/impurities, or alumino-silicates of the adjacent soil matrix. A number of hypotheses are drawn on the possible mechanisms of formation of these silica-rich pedofeatures, including the possibility of prolonged weathering of volcanic materials and the resulting formation of colloids and more or less ordered silica phases, with successive dehydration and progressive ordering of phases during the at least 2.5 million years. (C) 2003 Elsevier B.V. All rights reserved.