Chaotic dynamics of electric-field domains in periodically driven superlattices


Autoria(s): Bulashenko, Oleg; García, M. J.; Bonilla, L. L. (Luis López), 1956-
Data(s)

26/01/2010

26/01/2010

1996

Resumo

Self-sustained time-dependent current oscillations under dc voltage bias have been observed in recent experiments on n-doped semiconductor superlattices with sequential resonant tunneling. The current oscillations are caused by the motion and recycling of the domain wall separating low- and high-electric-field regions of the superlattice, as the analysis of a discrete drift model shows and experimental evidence supports. Numerical simulation shows that different nonlinear dynamical regimes of the domain wall appear when an external microwave signal is superimposed on the dc bias and its driving frequency and driving amplitude vary. On the frequency-amplitude parameter plane, there are regions of entrainment and quasiperiodicity forming Arnold tongues. Chaos is demonstrated to appear at the boundaries of the tongues and in the regions where they overlap. Coexistence of up to four electric-field domains randomly nucleated in space is detected under ac+dc driving.

Formato

11 p.

application/pdf

Identificador

0163-1829

http://hdl.handle.net/2445/10912

517059

Idioma(s)

eng

Publicador

The American Physical Society

Relação

Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.53.10008

Physical Review B, 1996, vol. 53, núm. 15, p. 10008-10018

Direitos

(c) The American Physical Society, 1996

info:eu-repo/semantics/openAccess

Palavras-Chave #Dinàmica de fluids #Semiconductors #Efecte túnel #Fluid dynamics #Semiconductors #Tunneling (Physics)
Tipo

info:eu-repo/semantics/article