不同耕作方式对黄土高原旱地麦田土壤物理性状的影响

通过冬小麦田间试验,研究了免耕、深松、翻耕三种不同耕作措施对土壤物理特性的影响。结果表明:冬小麦收获时,免耕与其它处理相比,增大了土壤容重、土壤硬度,其土壤干筛法>0.25 mm团聚体含量比深松和翻耕每层平均增加3%和5%,但较冬小麦耕作处理前每层平均下降5%;免耕条件下,湿筛法>0.25 mm团聚体含量比深松和翻耕每层平均增加11%和32%,较冬小麦耕作处理前每层平均下降42%;免耕可增加土壤蓄水量,收获期土壤蓄水量为373.1 mm,较深松和翻耕提高17%和8%;随着降水量的增加,冬小麦收获期水分入渗速率逐渐减少;且不同耕作方式水分入渗速率为免耕>深松>翻耕。

施肥对干旱胁迫下夏玉米根系提水的调节作用研究

以耐旱性玉米品种郑单958号为材料,采用两室分根土培装置,通过时域反射计(TDR)对上下土层土壤含水量进行控制和观测,研究施肥对干旱胁迫条件下玉米根系提水作用的影响.结果表明,玉米根系在土层上干下湿条件下(即上下层土壤存在一定水势差时)存在明显提水作用;玉米根系提水量在整个生育期呈单峰变化,并以吐丝期最大;上层土壤施肥可以调节玉米根系提水作用强弱,整个生育期根系总提水量表现为NP配施>单施P>CK>单施N,NP配施处理全生育期单株提水量(1 948.6 g)分别是单施P处理、CK和单施N处理的1.5倍、3.1倍和3.5倍.玉米整个生育期根系总提水量与收获期不同层次根系干重和体积存在极显著正相关关系,也与其地上部分生物量和籽粒产量呈极显著或显著正相关关系.可见,玉米根系的提水作用强弱因生育期和施肥处理而变化,施肥主要通过影响根系生长来调节其提水作用;在一定水分环境条件下,玉米根系提水作用能促进作物生长,提高其籽粒产量.

NEAR-RESONANCE RAMAN-SCATTERING OF LONGITUDINAL OPTICAL PHONON MODES AND INTERFACE MODES IN GAAS/ALAS SUPERLATTICES

The near-resonance Raman scattering of GaAs/AlAs superlattices is investigated at room temperature. Owing to the resonance enhancement of Frohlich interaction, the scattering intensity of even LO confined modes with A1 symmetry becomes much stronger than that of odd modes with B2 symmetry. The even modes were observed in the polarized spectra, while the odd modes appear in the depolarized spectra as in the off-resonance case. The second-order Raman spectra show that the polarized spectra are composed of the overtone and combinations of even modes, while the depolarized spectra are composed of the combinations of one odd mode and one even mode. The results agree well with the selection rules predicted by the microscopic theory of Raman scattering in superlattices, developed recently by Huang and co-workers. In addition, the interface modes and the combinations of interface modes and confined modes are also observed in the two configurations.

1300 nm超辐射发光二极管寿命测试

作为光纤陀螺用光源的超辐射发光二极管(SLD)随着工作时间的延续,其性能会发生退化。采用加速老化的实验方法来估算InGaAsP SLD管芯的工作寿命。分别在环境温度373 K和358 K下对5只SLD管芯进行加速老化,并通过对P-t曲线拟合来推算和估计管芯的老化速率和激活能。计算出了器件的激活能平均值约为0.82 eV,SLD管芯在室温下的工作寿命超过10~6 h,可以满足光纤陀螺用光源的寿命要求。对影响SLD管芯可靠性的因素以及管芯的退化机理进行了分析,为研制高可靠性的超辐射发光二极管提供了理论基础。

微量掺碳ne-SiC:H薄膜用于p-i-n太阳电池的窗口层

采用等离子增强化学气相沉积方法(PEVVD)制备了微量掺碳的p型纳米非晶硅碳薄膜(p-nc-SiC:H),反应气体为硅烷和甲烷,掺杂气体采用硼烷,沉积温度分别采用333 K,353 K和373 K.测量结果表明随着沉积温度增加和碳含量的增加,薄膜的光学带隙增加;薄膜具有较宽的带隙和较高的电导率,同时有较低的激活能(0.06 eV).Raman和XRD测量结果表明薄膜存在纳米晶.优化的p型纳米非晶硅碳薄膜作为非晶硅p-i-n太阳电池的窗口层,使得太阳电池的开路电压达到0.94 V.

ne-Si:H薄膜的内应力特性研究

测试了采用PECVD生长的氢化纳米硅(nc-Si：H)薄膜的内应力。利用XRD、Raman、AFM、 HRTEM研究了nc-Si：H薄膜的微结构，用全场薄膜应力测试仪测量了nc-Si：H薄膜的内应力。结果表明：nc-Si：H薄膜的内应力与薄膜的微结构密切相关，强烈依赖于制备工艺。压应力随掺杂浓度的提高而增加；在一定功率密度范围内掺磷nc-Si：H薄膜的压应力随功率密度增加而减少，并过渡为张应力；在373-523K之间，掺硼nc-Si：H薄膜的压应力随衬底温度升高而增加；nc- Si：H薄膜的压应力随氢气对硅烷稀释比的变化而变化。

650nm AlGaInP quantum well lasers for the application of DVD

Main application of 650nm band laser diodes are for digital versatile disk (DVD). We demonstrate here the 650nm AlGaInP LD grown by LP-MOCVD with the structure of selected buried ridge waveguide. Excellent performance of LD have been achieved such as threshold current, threshold current density as low as 20mA and 350A/cm(2) respectively at room temperature, the operating temperature up to 90 for the linear power output of 5mw. RIN is about -130db/Hz, The samples of LD have been certified by PUH manufacturers.