Semantic transform: Weakly supervised semantic inference for relating visual attributes

Relative (comparative) attributes are promising for thematic ranking of visual entities, which also aids in recognition tasks. However, attribute rank learning often requires a substantial amount of relational supervision, which is highly tedious, and apparently impractical for real-world applications. In this paper, we introduce the Semantic Transform, which under minimal supervision, adaptively finds a semantic feature space along with a class ordering that is related in the best possible way. Such a semantic space is found for every attribute category. To relate the classes under weak supervision, the class ordering needs to be refined according to a cost function in an iterative procedure. This problem is ideally NP-hard, and we thus propose a constrained search tree formulation for the same. Driven by the adaptive semantic feature space representation, our model achieves the best results to date for all of the tasks of relative, absolute and zero-shot classification on two popular datasets. © 2013 IEEE.

Population genetic structure of an endemic cyprinid fish, Ancherythroculter nigrocauda, in the upper reaches of the Yangtze River and its implication for conservation

Ancherythroculter nigrocauda is a cyprinid fish endemic to the upper reaches of the Yangtze River, which has been reported to have 2 or 3 chambers to its air bladder. Morphological studies showed no differences between individuals with different types of air bladder, but did demonstrate geographical differences from different sources. After the completion of the Three Gorges Dam, it was expected that the population of this species would decrease, but artificial breeding and stocking is under consideration to protect this species from extinction. In the present study, mtDNA cytochrome b gene sequences were determined and analyzed for A. nigrocauda samples of different morphotypes and sources to identify their genetic differentiations, and thereby guide plans for the artificial propagation and conservation of this species. Haplotype diversity index values (h) and nucleotide diversity values (pi) for all the populations were found to be high indicating their high level genetic diversity. An analysis of molecular variance identified no differentiation among the studied populations. Therefore, we suggested that the individuals of different morphological types and geographical sources belong to the same species. To maintain its high level genetic diversity, it mill he necessary to use large and diverse sources of parental fish for artificial reproduction.

Using epilithic diatom communities to assess ecological condition of Xiangxi River system

Assessment method for ecological condition of Xiangxi River system was studied by using 13 candidate metrics of epilithic diatom which can reflect conditions in pH, salinity, nitrogen uptake metabolism, oxygen requirements, saprobity, trophic state, morphological character and pollution tolerant capability etc. By one-way ANOVA, the metrics of relative abundance of acidobiontic algae (ACID), freshwater algae (FRESH), high oxygen requirement (HIGH-O), eutraphentic state (EUTRA) and mobile taxa ( MOBILE) were suitable for distinguishing sites in different conditions. Then, the river diatom index (RDI) composed of these five metrics was used to evaluate ecological condition of the river. The results showed that the healthiest sites were in the Guanmenshan Natural Reserve ( with the mean RDI of 79.73). The sites located in tributary of Jiuchong River also owned excellent state (mean RDI of 78.25). Mean RDI of another tributary - Gufu River and the main river were 70.85 and 68.45 respectively, and the unhealthiest tributary was Gaolan River (with mean RDI of 65.64). The mean RDI for all the 51 sites was 71.40. The competence of RDI was discussed with comparison of evaluation results of DAIpo and TDI, it can be concluded that multimetrics is more competent in assessment task.

Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector

A new method to test the hole concentration of p-type GaN is proposed, which is carried out by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector. It is shown that the spectral response of the photodetector changes considerably with reversed bias. It is found that the difference between photodetector's quantum efficiency at two wavelengths, i.e. 250 and 361 nm, varies remarkably with increasing reversed bias. According to the simulation calculation, the most characteristic change occurs at a reversed voltage under which the p-GaN layer starts to be completely depleted. Based on this effect the carrier concentration of p-GaN can be derived.

Mode characteristics of semiconductor equilateral triangle microcavities with side length of 5-20 mu m

Semiconductor equilateral triangle microresonators (ETRs) with side length of 5, 10, and 20 mum are fabricated by the two-step inductively coupled plasma (ICP) etching technique. The mode properties of fabricated InGaAsP ETRs are investigated experimentally by photoluminescence (PL) with the pumping source of a 980-nm semiconductor laser and distinct peaks are observed in the measured PL spectra. The wavelength spacings of the distinct peaks agree very well with the theoretical longitudinal mode intervals of the fundamental transverse modes in the ETRs, which verifies that the distinct peaks are corresponding to the enhancement of resonant modes. The mode quality factors are calculated from the width of the resonant peaks of the PL spectra, which are about 100 for the ETR with side length of 20 mum.

Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE

Fabrication of InGaAlAs MQW buried heterostructure (BH) lasers by narrow stripe selective MOVPE is demonstrated in this paper. High quality InGaAlAs MQWs were first grown by narrow stripe selective MOVPE without any etching process and assessed by analysing the cross sections and PL spectrums of the InGaAlAs MQWs. Furthermore, BHs were fabricated for the InGaAlAs MQW lasers by a developed unselective regrowth method, instead of conventional selective regrowth. The InGaAlAs MQW BH lasers exhibit good device characteristics, with a high internal differential quantum efficiency of 85% and a low internal loss of 6.7 cm(-1). Meanwhile, narrow divergence angles of the far field pattern are obtained for the fabricated lasers.

A novel method of determining semiconductor parameters in EBIC and SEBIV modes of SEM

We present a novel method for determining semiconductor parameters such as diffusion length L, lifetime tau and surface recombination velocity S of minority carriers by employing scanning electron microscopy (SEM). This new method is applicable to both electron beam induced current (EBIC and surface electron beam induced voltage (SEBIV) modes in SEM. The quantitative descriptions for EBIC and SEBIV signals are derived. The parameters L, S and tau can be directly extracted from the expressions for EBIC or SEBIV signals and their relaxation characteristics in experiment. As an example, the values of L, S and tau for n-p junction and p-Si crystal are determined by using the novel method in EBIC or SEBIV mode. The carrier diffusion length of a p-Si crystal is determined to be 8.74 mum in SEBIV mode. It is very close to the normal diffusion length of 7.41 mum of this sample. The novel method is proved to be very helpful for the quantitative characterization of semiconductor materials and devices. Especially, the SEBIV mode in SEM shows great potential for investigating semiconductor structures nondestructively.

In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE

The effects of in situ annealing treatment in the initial growth stage and In-doping during growth of the GaN on the material properties were investigated. GaN was grown by LP-MOVPE. In situ annealing reduced the full-width at half-maximum (FWHM) of X-ray rocking curves and reduced etch pit density of GaN films. It improved the optical properties of the epilayer. Undoped and In-doped GaN films of initial growth stage were investigated. It was found that morphology and optical properties were improved in In-doped samples. (C) 2000 Elsevier Science B.V. All rights reserved.

Analytical study of the antiferromagnetic Heisenberg films

With the variational cumulant expansion (VCE) method, the thermodynamic behaviors of S = 1/2 antiferromagnetic Heisenberg films in simple cubic lattices are studied analytically. From the analytic properties of the free energy, in principle we are able to calculate analytically the critical temperatures T-c(L) and the thermodynamic functions, to any order cumulant as the functions of the number of L (the hyperlayers in the hyperfilm). Explicit expressions for T-c(L) up to the fourth order are given. A comparison with the existing results for 3-dimensional system is given. The effective range of the interaction is obtained from numerical results.

Growth and transport properties of InAs thin films on GaAs

High-quality InAs epitaxial layers have been grown on (1 0 0) oriented semi-insulating GaAs substrates by MBE. The transport properties of largely lattice mismatched InAs/GaAs heterojunctions have been investigated by Hall effect measurements down to 10 K. In spite of a high dislocation density at the heterointerface, very high electron mobilities are obtained in the InAs thin films. By doping Si into the layer far from the InAs/GaAs interface, we found that the doped samples have higher electron mobility than that of the undoped samples with the same thickness. The mobility demonstrates a pronounced minimum around 300 K for the undoped sample. But for Si-doped samples, no pronounced minimum has been found. Such abnormal behaviours are explained by the parallel conduction from the quasi-bulk carriers and interface carriers. These high-mobility InAs thin films are found to be suitable materials for making Hall elements. (C) 1998 Elsevier Science B.V. All rights reserved.

滴灌条件下不同保水剂在枣林坡地的应用效果研究

利用野外试验方法,在滴灌条件下研究了保水剂在坡地枣林中的使用效果。试验结果证明:施用保水剂的土壤含水量较对照提高了15.3%~39.2%,使10~70 cm土层有较高贮存水量,在年生育期平均降雨量为395 mm情况下,确定红枣整个生育期(为210 d)共灌水4次,按大约每55 d灌溉一次计算,可减少灌溉2次,节约用水264 m3/hm2;0~60 cm土壤平均容重降低0.05~0.16 g/cm3,改善了土壤的通气透水的土壤物理性质,促进了枣树的生长发育,与对照株产5.6 kg相比,四年生红枣单株最高可增产2.85 kg/株;就不同保水剂综合来说,Hs和Hm表现出良好的适宜性。