Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE
Data(s) |
2007
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Resumo |
Fabrication of InGaAlAs MQW buried heterostructure (BH) lasers by narrow stripe selective MOVPE is demonstrated in this paper. High quality InGaAlAs MQWs were first grown by narrow stripe selective MOVPE without any etching process and assessed by analysing the cross sections and PL spectrums of the InGaAlAs MQWs. Furthermore, BHs were fabricated for the InGaAlAs MQW lasers by a developed unselective regrowth method, instead of conventional selective regrowth. The InGaAlAs MQW BH lasers exhibit good device characteristics, with a high internal differential quantum efficiency of 85% and a low internal loss of 6.7 cm(-1). Meanwhile, narrow divergence angles of the far field pattern are obtained for the fabricated lasers. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Feng, W (Feng, W.); Pan, JQ (Pan, J. Q.); Wang, LF (Wang, L. F.); Bian, J (Bian, J.); Wang, BJ (Wang, B. J.); Zhou, F (Zhou, F.); An, X (An, X.); Zhao, LJ (Zhao, L. J.); Zhu, HL (Zhu, H. L.); Wang, W (Wang, W.) .Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,JAN 21 2007,40 (2):361-365 |
Palavras-Chave | #光电子学 #BANDGAP ENERGY CONTROL |
Tipo |
期刊论文 |