AlGaInAs-InPMicrocylinder Lasers Connected With an Output Waveguide

AlGaInAs-InPmicrocylinder lasers connected with an output waveguide are fabricated by planar technology. Room-temperature continuous-wave operation with a threshold current of 8 mA is realized for a microcylinder laser with the radius of 10 mu m and the output waveguide width of 2 mu m. The mode Q-factor of 1.2 x 10(4) is measured from the laser spectrum at the threshold. Coupled mode characteristics are analyzed by 2-D finite-difference time-domain simulation and the analytical solution of whispering-gallery modes. The calculated mode Q-factors of coupled modes are in the same order as the measured value.

Quantum coherent networks: A theoretical study

Electron transport in quantum coherent networks (interacting quantum waveguide arrays) is investigated theoretically with use of the scattering-matrix method. The scattering matrix for the basic unit of networks, the cross junction with Square or rounded corners, is derived using the mode-matching technique, The overall scattering matrix for the network is obtained by the composition of the scattering matrices associated with each unit of the network, For a uniform network, the transmission spectra are calculated in the single-mode regime and an found notably dependent on the junction geometry. Small reflection for the input terminal and uniform output for some output ports are obtained, which means that the quantum coherent network can be used as a distributing net for the electron waves. Cross junctions with rounded corners of large radii are found to play a negative role in the device application of quantum coherent networks. (C) 1997 American Institute of Physics.

Effect of Si-Ge interdiffusion on the waveguide properties of SiGe-Si MQW photodetector

Because of Si-Ge interdiffusion in the Si-SiGe interface during the growth process, the square-wave refractive index distribution of a SiGe-Si multiple-quantum-web (MQW) will become smooth. In order to simulate the actual refractive index profile, a staircase approximation is applied. Based on this approach, the dispersion equation of the MQW waveguide is obtained by using a transfer matrix method, The effects of index changes caused by the interdiffusion on the optical field and the characteristics of the photodetector are evaluated by solving the dispersion equation, It is shown that the Si-Ge interdiffusion can result in a reduction of the effective absorption coefficient and the quantum efficiency.

A novel quantum directional coupler based on Pi-shaped coupled electron waveguides

We explore the possibility of a quantum directional coupler based on Pi-shaped coupled electron waveguides with smooth boundaries. By calculating the transmission spectra, we propose an optimized coupler structure with a high directivity and fine uniformity. The coupler specifications, directivity, uniformity, and coupling coefficient are evaluated.

An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser

A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs_0.9P_0.1/InGaAs quantum well. Experimentally, a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink, and a peak PCE of 60% is obtained at 26.3-W continuous wave output power.The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE.

An Improvement on 2× 2 Silicon-on-Insulator Mach-Zehnder Thermo-Optical Switch

An improved 2 ×2 silicon-on-insulator Mach-Zehnder thermo-optical switch is designed and fabricated, which is based on strongly guided multimode interference couplers and single- mode phase-shifting arms. The multimode interference couplers and input/output waveguides are deeply etched to improve coupler performances and coupler-waveguide coupling efficiencies. However, shallow etching is used in the phase-shifting arms to guarantee single-mode property. The strongly guided coupler presents an attractive uniformity about 0. 03 dB and a low propagation loss of -0.6 dB. The 2× 2 switch shows an insertion loss as low as -6.8 dB, where the fiber-waveguide coupling loss of -4.3 dB is included, and the response-time is measured as short as 6.8 μs, which are much better than our previous results.

Analysis of directional emission in square resonator lasers with an output waveguide

Square microcavity laser with an output waveguide is proposed and analyzed by the finite-difference time-domain (FDTD) technique. For a square resonator with refractive index of 3.2, side length of 4 microns, and output waveguide of 0.4-micron width, we have got the quality factors (Q factors) of 6.7×10~2 and 7.3×10~3 for the fundamental and first-order transverse magnetic (TM) mode near the wavelength of 1.5 microns, respectively. The simulated intensity distribution for the first-order TM mode shows that the coupling efficiency in the waveguide reaches 53%. The numerical simulation shows that the first-order transverse modes have fairly high Q factor and high coupling efficiency to the output waveguide. Therefore the square resonator with an output waveguide is a promising candidate to realize single-mode directional emission microcavity lasers.

An All-E-Beam Lithography Process for the Patterning of 2D Photonic Crystal Waveguide Devices

We present an all-e-beam lithography (EBL) process for the patterning of photonic crystal waveguides.The whole device structures are exposed in two steps. Holes constituting the photonic crystal lattice and defects are first exposed with a small exposure step size (less than 10nm). With the introduction of the additional proximity effect to compensate the original proximity effect, the shape, size, and position of the holes can be well controlled.The second step is the exposure of the access waveguides at a larger step size (about 30nm) to improve the scan speed of the EBL. The influence of write-field stitching error can be alleviated by replacing the original waveguides with tapered waveguides at the joint of adjacent write-fields. It is found experimentally that a higher exposure efficiency is achieved with a larger step size;however,a larger step size requires a higher dose.

An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter

A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology. A 1550-1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°× 18.0°, respectively, resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.

Monolithically Integrated Laser Diode and Electroabsorption Modulator with Dual-Waveguide Spot-Size Converter Output

A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dualwaveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The devices emit in a single transverse and quasi single longitudinal mode with an SMSR of 25.6dB. These devices exhibit a 3dB modulation bandwidth of 15. 0GHz, and modulator DC extinction ratios of 16.2dB. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7. 3°× 18. 0°,respectively, resulting in a 3. 0dB coupling loss with a cleaved single-mode optical fiber.

Design,Fabrication,and Testing of Single-Side Alignment of 16×0.8nm Arrayed-Waveguide Grating

A novel design of 100GHz-spaced 16channel arrayed-waveguide grating (AWG) based on silica-on-silicon chip is reported.AWG is achieved by adding a Y-branch to the AWG and arranging the input/output channel in a neat row,so the whole configuration can be aligned and packaged using only one fiber-array.This configuration can decrease the device's size,enlarge the minimum radius of curvature,save time on polishing and alignment,and reduce the chip's fabrication cost.

Analysis and Simulation of S-shaped Waveguide in Silicon-on-insulator

The simulation and analysis of S-shaped waveguide bend are presented.Bend radius larger than 30 mm assures less than 0.5 dB radiation loss for a 4-μm-wide silicon-on-insulator waveguide bend with 2-μm etch depth.Intersection angle greater than 20° provides negligible crosstalk (＜-30 dB) and very low insertion loss.Any reduction in bend radius and intersection angle is at the cost of the degradation of characteristics of bent waveguide and intersecting waveguide, respectively.

Polarization-Insensitive Silica on Silicon Arrayed Waveguide Grating Design

A new technology for fabrication of silica on silicon arrayed waveguide grating (AWG) based on deep etching and thermal oxidation is presented.Using this method,a silicon layer is remained at the side of waveguide.The stress distribution and effective refractive index of waveguide fabricated by this approach are calculated using finite element and finite difference beam propagation method,respectively.The results of these studies indicate that the stress of silica on silicon optical waveguide can be matched in parallel and vertical direction and AWG polarization dependent wavelength (PDλ) can be reduced effectively due to side-silicon layer.

Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler

A novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped Nd∶YAG laser at 1.06μm,is realized.The pulse frequency is 150MHz.

Integrated MMI Optical Couplers and Optical Switches in Silicon-on-Insulator Technology

Integrated multimode interference (MMI) coupler based on silicon-on-insulator(SOI) has been becoming a kind of more and more attractive device in optical systems. SiO2thin cladding layers (＜1.0 μm) can be usedin SOI waveguide due to the large index step be-tween Si and SiO2, making them compatible with VLSI technology. The design and fabrica-tion of MMI optical couplers and optical switches in SOI technology are presented in thepa-per. We demonstrated the switching time of 2 × 2 MMI-MZI thermo-optical switch is less than 20 μs: