High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region

High-power and broadband quantum-dot (QD) superluminescent light-emitting diodes are realized by using a combination of self-assembled QDs with a high density, large inhomogeneous broadening, a tapered angled pump region, and etched V groove structure. This broad-area device exhibits greater than 70-nm 3-dB bandwidth and drive current insensitive emission spectra with 100-mW output power under continuous-wave operation. For pulsed operation, greater than 200-mW output power is obtained.

Synthesis and characterization of ZnO nanorods and nanoflowers grown on GaN-based LED epiwafer using a solution deposition method

We report the growth of hexagonal ZnO nanorods and nanoflowers on GaN-based LED epiwafer using a solution deposition method. We also discuss the mechanisms of epitaxial nucleation and of the growth of ZnO nanorods and nanoflowers. A GaN-based LED epiwafer was first deposited on a sapphire substrate by MOCVD with no electrode being fabricated on it. Vertically aligned ZnO nanorods with an average height of similar to 2.4 mu m were then grown on the LED epiwafer, and nanoflowers were synthesized on the nanorods. The growth orientation of the nanorods was perpendicular to the surface, and the synthesized nanoflowers were composed of nanorods. The micro-Raman spectra of the ZnO nanorods and nanoflowers are similar and both exhibit the E-2 (high) mode and the second-order multiple-phonon mode. The photoluminescence spectrum of ZnO nanostructures exhibits ultraviolet emission centred at about 380 nm and a broad and enhanced green emission centred at about 526 nm. The green emission of the ZnO nanostructures combined with the emission of InGaN quantum wells provides a valuable method to improve the colour rendering index (CRI) of LEDs.

MOVPE growth of GaN and LED on (111) MgAl2O4

The growth of wurtzite GaN by low-pressure metalorganic vapor-phase epitaxy on (1 1 1) magnesium aluminate (MgAl2O4) substrates have been studied. The morphological, crystalline, electrical and optical properties are investigated. A p-n junction GaN LED was fabricated on the MgAl2O4 substrate. (C) 1998 Elsevier Science B.V. All rights reserved.

Color filter-less technology of LED back light for LCD-TV - art. no. 68410G

Back Light Unit (BLU) and Color Filter are the two key components for the perfect color display of Liquid Crystal Display (LCD) device. LCD can not light actively itself, so a form of illumination, Back Light Unit is needed for its display. The color filter which consists of RGB primary colors, is used to generate three basic colors for LCD display. Traditional CCFL back light source has several disadvantages, while LED back light technology makes LCD obtain quite higher display quality than the CCFL back light. LCD device based on LED back light owns promoted efficiency of display. Moreover it can generate color gamut above 100% of the NTSC specification. Especially, we put forward an idea of Color Filter-Less technology that we design a film which is patterned of red and green emitting phosphors, then make it be excited by a blue light LED panel we fabricate, for its special emitting mechanism, this film can emit RGB basic color, therefore replace the color filter of LCD device. This frame typically benefits for lighting uniformity and provide pretty high light utilization ratio. Also simplifies back light structure thus cut down the expenses.

The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M

We investigate the relation between the thickness of sapphire substrates and the extraction efficiency of LED. The increasing about 5% was observed in the simulations and experiments when the sapphire thickness changed from 100um to 200um. But the output power increasing is inconspicuous when the thickness is more than 200um. The structure on bottom face of sapphire substrates can enhance the extraction efficiency of GaN-based LED, too. The difference of output power between the flip-chip LED with smooth bottom surface and the LED with roughness bottom surface is about 50%, where only a common sapphire grinding process is used. But for those LEDs grown on patterned sapphire substrate the difference is only about 10%. Another kind of periodic pattern on the bottom of sapphire is fabricated by the dry etch method, and the output of the back-etched LEDs is improved about 50% than a common. case.

Research on color matching of LED backlight for large-color-gamut LCD application - art. no. 68410Y

Comparing with the conventional CCFL (Cold Cathode Fluorescent Lamp) backlight, three-basic-color LEDs backlight has some advantages such as good color reproduction, long life and lead free etc. Theoretically, the color gamut is determined by x, y coordinates of the three basic colors in CIE chromaticity diagram, and the x, y coordinates of each basic color can derived from the relative spectrum distribution (RSD) of the LED. In this paper, the red, green and blue LEDs' RSD models are established to calculate and analyze the color gamut of a backlight. By simulating those models, the relationships that the color gamut of a LED backlight varies with each color are analyzed, and the optimum combination of three colors is obtained within the given wavelengths ranges. Moreover, the combinations of three colors for the gamut of 115% NTSC and 110% NTSC are plotted in pictures, respectively.

MVPE Ga 掺杂ZnO 薄膜材料的制备及其在LED 中的应用

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新的白光LED灯用不同光色发射荧光体的研究

凡是与某种发光二极管（LED）匹配能够产生白光发射的荧光体均可称作白光LED荧光体，通过这种匹配构筑起来的白光发射体系（或器件），简称作白光LED。白光LED是一种新的固态光源，具有环保、节能等诸多优点。目前已实用化的白光LED只有蓝光LED＋YAG:Ce荧光粉，但其显色性差，不能满足通常的照明要求。因此，寻找并研究可以与UVLED、蓝光LED匹配的、能产生高效的各种光色发射的新的荧光体具有重要的理论和现实意义。 本工作利用高温固相法合成了四个白光LED灯用多光色发射荧光新体系。研究成果如下： 1. 合成出一种新的白光LED灯用荧光体－黄橙光发射的Eu2+掺杂的高温相氯硅酸钙荧光体，HTP-Ca3SiO4Cl2:Eu2+。该荧光体与近紫外LED匹配产生暖白光发射。晶体结构解析表明，HTP-Ca3SiO4Cl2属单斜晶系。 2. 研究发现Eu2+离子掺杂的低温相氯硅酸钙荧光体可用作白光LED灯用绿色荧光体，LTP-Ca3SiO4Cl2:Eu2+。实验结果证明与已报道的硫化物、氮化物LED灯用绿色荧光体相比，该荧光体具有合成条件相对温和、简便、无污染等优点。 3. 合成出一种新的白光LED灯用蓝绿光发射荧光体－Eu2+掺杂的硅酸锂钙，Li2CaSiO4:Eu2+。该荧光体的激发光谱从紫外延伸到可见区，和已报道的氯磷酸盐、铝酸盐LED灯用蓝光发射荧光体相比，具有更广泛的应用性。 4. 找到了一种可明显改善CaMoO4:Eu3+发光特性途径，通过碱金属离子和空穴进行电荷补偿可以使CaMoO4:Eu3+的红光发射强度提高3倍左右，使其有可能应用作白光LED红光发射组分。

GaN m-i-n LED grown by MOVPE

Undoped and Zinc-doped GaN films have been grown using TMGa, DEZn and Ammonia by MOVPE. The GaN blue-green LEDs of m-i-n structure have been fabricated. They can be operated at forward bias less than 5 volts. The EL peak wavelengths was from 455 nm to 504 nm.

基于文献计量分析的LED知识图谱及产业化对策

LED照明是当前最具发展前景的高技术领域之一.本文运用文献计量相关分析方法对LED的历史文献进行分析,通过绘制多维尺度分析图谱和核心关键词关联知识图谱,挖掘当前LED的技术成熟度、研究热点和关键技术点等信息,得出LED技术目前主要集中宽带隙材料、发光类型及特性、有机发光和超亮度LED研发上;氮化镓(GaN)、电致发光(electroluminescence)、光致发光(photoluminescence)、白光(White LED)等在整个LED研究中处于中心和控制大多数信息流向的地位.最后,本文通过国别分析判断我国LED产业的实力水平,最终为我国的LED技术产业化发展提供建议.