GaN m-i-n LED grown by MOVPE
| Data(s) |
1996
|
|---|---|
| Resumo |
Undoped and Zinc-doped GaN films have been grown using TMGa, DEZn and Ammonia by MOVPE. The GaN blue-green LEDs of m-i-n structure have been fabricated. They can be operated at forward bias less than 5 volts. The EL peak wavelengths was from 455 nm to 504 nm. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Lu DC; Liu XL; Wang D; Wang XH; Lin LY .GaN m-i-n LED grown by MOVPE ,MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH,1996,1(0):art. no.18 |
| Palavras-Chave | #半导体材料 #BUFFER LAYER |
| Tipo |
期刊论文 |
