MOVPE growth of GaN and LED on (111) MgAl2O4
| Data(s) |
1998
|
|---|---|
| Resumo |
The growth of wurtzite GaN by low-pressure metalorganic vapor-phase epitaxy on (1 1 1) magnesium aluminate (MgAl2O4) substrates have been studied. The morphological, crystalline, electrical and optical properties are investigated. A p-n junction GaN LED was fabricated on the MgAl2O4 substrate. (C) 1998 Elsevier Science B.V. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Duan SK; Teng XG; Wang YT; Li GH; Jiang HX; Han P; Lu DC .MOVPE growth of GaN and LED on (111) MgAl2O4 ,JOURNAL OF CRYSTAL GROWTH ,1998,189(0):197-201 |
| Palavras-Chave | #半导体材料 #GaN #MgAl2O4 #MOVPE #LED #DIODES |
| Tipo |
期刊论文 |
