Proximity effect in Ag-Pb alloys

The superconducting properties and the microstructure of the Ag_100-xPb_x alloys, 1 ≤ x ≤ 5, prepared by rapid quenching from the liquid state with and without subsequent heat treatments, have been studied. The x-ray diffraction measurements show that supersaturated solid solutions of Pb in Ag can be obtained up to 3.2 at.% Pb as compared to less than 0.1 at.% Pb at equilibrium. It was found that by suitable heat treatment it is possible to vary the size and distribution of the Pb precipitates in the Ag matrix and reproducible superconducting properties in the alloy can be observed. The superconducting transition temperature of these samples can be qualitatively explained by the Silvert and Singh's theoretical calculation. The theory developed for the case of layer structure can be extended to three dimensions to explain the critical current versus temperature behavior. The critical current versus field behavior of these alloys can be explained by the modification of the Josephson effect. Combining these results together with the critical magnetic field measurements and the microstructure studies of the alloys, it can be concluded that the three-dimensional proximity effect is the main mechanism for the superconductivity in the Ag-Pb alloys. Based on the Hilsch empirical formula which was based on experimental results obtained on layer structures, the experimental data in this investigation show that the electron-phonon-electron interaction in silver is attractive. The interaction parameter NV obtained is approximately 0.06, which would lead to a value of 10^-5 °K for the superconducting transition temperature of Ag. These values are in agreement with other determinations which were done on vapor-deposited metallic film sandwiches. Hence, the Hilsch empirical relation valid for layer structures is also valid in the three-dimensional case. Because the transition temperature and the critical current can be varied in a wide range by controlling the heat treatments, the Ag-Pb superconductors might have some useful applications.

Magnetic moments in amorpous palladium-cobalt-silicon alloys

The magnetic moments of amorphous ternary alloys containing Pd, Co and Si in atomic concentrations corresponding to Pd_(80-x)Co_xSi_(20) in which x is 3, 5, 7, 9, 10 and 11, have been measured between 1.8 and 300°K and in magnetic fields up to 8.35 kOe. The alloys were obtained by rapid quenching of a liquid droplet and their structures were analyzed by X-ray diffraction. The measurements were made in a null-coil pendulum magnetometer in which the temperature could be varied continuously without immersing the sample in a cryogenic liquid. The alloys containing 9 at.% Co or less obeyed Curie's Law over certain temperature ranges, and had negligible permanent moments at room temperature. Those containing 10 and 11 at.% Co followed Curie's Law only above approximately 200°K and had significant permanent moments at room temperature. For all alloys, the moments calculated from Curie's Law were too high to be accounted for by the moments of individual Co atoms. To explain these findings, a model based on the existence of superparamagnetic clustering is proposed. The cluster sizes calculated from the model are consistent with the rapid onset of ferromagnetism in the alloys containing 10 and 11 at.% Co and with the magnetic moments in an alloy containing 7 at.% Co heat treated in such a manner as to contain a small amount of a crystalline phase. In alloys containing 7 at.% Co or less, a maximum in the magnetization vs temperature curve was observed around 10°K. This maximum was eliminated by cooling the alloy in a magnetic field, and an explanation for this observation is suggested.

Appraisal of PD6493:1991 fracture assessment procedures

PD6493:1991 fracture assessment have been performed for a range of large-scale fracture mechanics tests conducted at TWI in the past. These tests cover several material groups, including pressure vessel steels, pipeline steels, stainless steels and aluminium alloys, including parent material and weldments. Ninety-two wide plate and pressure vessel tests have been assessed, following Levels 1, 2 and 3 PD6493:1991 procedures. In total, over 400 assessments have been performed, examining many features of the fracture assessment procedure including toughness input, proof testing, residual stress assumptions and stress state (tension, bending and biaxial). In all cases the large scale tests have been assessed as one would actual structures: i.e., based on lower bound toughness values obtained from small scale fracture toughness specimens.

Thin film shape memory alloys for optical sensing applications

Based on shape memory effect of the sputtered thin film shape memory alloys, different types of micromirror structures were designed and fabricated for optical sensing application. Using surface micromachining, TiNi membrane mirror structure has been fabricated, which can be actuated based on intrinsic two-way shape memory effect of the free-standing TiNi film. Using bulk micromachining, TiNi/Si and TiNi/Si 3N 4microcantilever mirror structures were fabricated. © 2007 IOP Publishing Ltd.

Thin film shape memory alloys and microactuators

For Micro-electro-mechanical System (MEMS) applications, TiNi-based thin film Shape Memory Alloys (SMAs) possess many desirable properties, such as high power density, large transformation stress and strain upon heating and cooling, superelasticity and biocompatibility. In this paper, recent development in TiNi-based thin film SMA and microactuator applications is discussed. The topics related to film deposition and characterisation is mainly focused on crystal nucleation and growth during annealing, film thickness effect, film texture, stress induced surface relief, wrinkling and trenches as well as Temperature Memory Effect (TME). The microactuator applications are mainly focused on microvalve and microcage for biological applications, micromirror for optical applications and data storage using nanoindentation method. Copyright © 2009, Inderscience Publishers.

Plastic deformation of metals and alloys

This chapter focuses on relationships between plastic deformation structures and mechanical properties in metals and alloys deforming by dislocation glide. We start by summarizing plastic deformation processes, then look at the fundamental mechanisms of plastic deformation and explore how deformation structures evolve. We then turn to experimental techniques for characterization which have allowed deformation microstructures to be quantified in terms of common structural parameters. The microstructural evolution has been described over many length scales and analyzed theoretically based on general principles. The deformation microstructures are related to work hardening stages. Finally we identify correlations between a wide range of microstructural features and mechanical properties, particularly flow stress, and use experimental observations to illustrate their inter-relationships.

Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate

We report a room temperature study of the direct band gap photoluminescence of tensile-strained Ge/Si0.13Ge0.87 multiple quantum wells grown on Si-based germanium virtual substrates by ultrahigh vacuum chemical vapor deposition. Blueshifts of the luminescence peak energy from the Ge quantum wells in comparison with the Ge virtual substrate are in good agreement with the theoretical prediction when we attribute the luminescence from the quantum well to the c Gamma 1-HH1 direct band transition. The reduction in direct band gap in the tensile strained Ge epilayer and the quantum confinement effect in the Ge/Si0.13Ge0.87 quantum wells are directly demonstrated by room temperature photoluminescence.

Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy

MgO is a promising gate dielectric and surface passivation film for GaN/AlGaN transistors, but little is known of the band offsets in the MgO/AlN system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (Delta E-v) of MgO/AlN heterostructures. A value of Delta E-v=0.22 +/- 0.08 eV was obtained. Given the experimental band gap of 7.83 eV for MgO, a type-I heterojunction with a conduction band offset of similar to 1.45 eV is found. The accurate determination of the valence and conduction band offsets is important for use of III-N alloys based electronic devices.

Optical properties of phase-separated GaN1-xPx alloys grown by light-radiation heating metal-organic chemical vapour deposition

Based on the results of the temperature-dependent photoluminescence (PL) measurements, the broad PL emission in the phase-separated GaNP alloys with P compositions of 0.03, 0.07, and 0.15 has investigated. The broad PL peaks at 2.18, 2.12 and 1.83 eV are assigned to be an emission from the optical transitions from several trap levels, possibly the iso-electronic trap levels related to nitrogen. With the increasing P composition (from 0.03 to 0.15), these iso-electronic trap levels are shown to become resonant with the conduction band of the alloy and thus optically inactive, leading to the apparent red shift (80-160meV) of the PL peak energy and the trend of the red shift is strengthened. No PL emission peak is observed from the GaN-rich GaNP region, suggesting that the photogenerated carriers in the GaN-rich GaNP region may recombine with each other via non-radiation transitions.

Aluminium doping induced enhancement of p-d coupling in ZnO

Valence-band type Auger lines in Al doped and undoped ZnO were comparatively studied with the corresponding core level x-ray photoelectron spectrography (XPS) spectra as references. Then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d states downwards with increasing Al concentration. The decreased energy of the Zn 3d state is larger than the increased energy of the 0 2p state, indicating the lowering of total energy. This may indicate that Al doping could induce the enhancement of p-d coupling in ZnO, which originates from stronger Al-O hybridization. The shifts of these states and the mechanism were confirmed by valence band XPS spectra and 0 K-edge x-ray absorption spectrography (XAS) spectra. Finally, some previously reported phenomena are explained based on the Al doping induced enhancement of p-d coupling.

Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model

Radiant heat conversion performance dominated by the active layer of Ga0.84In0.16As0.14Sb0.86 diode has been systematically investigated based on an analytic absorption spectrum, which is suggested here by numerically fitting the limited experimental data. For the concerned diode configuration, our calculation demonstrates that the optimal base doping is 3-4 x 10(17) cm(-3), which is less sensitive to the variation of the external radiation spectrum. Given the scarcity of the alloy elements, an economical device configuration of the 0.2-0.6 mu m emitter and the 4-6 mu m base would be particularly acceptable because the corresponding conversion efficiency cannot exhibit discouraging degradation in comparison to the one for the optimal structure, the thickness of which may be up to 10 mu m. More importantly, the method we suggested here to calculate alloy absorption can be easily transferred to other composition, thus bringing great convenience for design or optimization of the optoelectronic device formed by these alloys.

Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN

The electronic properties of wide-energy gap zinc-blende structure GaN, A1N, and their alloys Ga(1-x)A1(x)N are investigated using the empirical pseudopotential method. Electron and hole effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained for GaN and AIN, respectively. The energies of Gamma, X, L conduction valleys of Ga(1-x)A1(x)N alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices based on these materials in the blue light range application. (C) 1995 American Institute of Physics.

First principles based predictions of the toughness of a metal/oxide interface

We describe a first-principles-based strategy to predict the macroscopic toughness of a gamma-Ni(Al)/alpha-Al2O3 interface. Density functional theory calculations are used to ascertain energy changes upon displacing the two materials adjacent to the interface, with relaxation conducted over all atoms located within adjoining rows. Traction/displacernent curves are obtained from derivatives of the energy. Calculations are performed in mode I (opening), mode II (shear) and at a phase angle of 45 degrees. The shear calculations are conducted for displacements along < 110 > and < 112 > of the Ni lattice. A generalized interface potential function is used to characterize the results. Initial fitting to both the shear and normal stress results is required to calibrate the unknowns. Thereafter, consistency is established by using the potential to predict other traction quantities. The potential is incorporated as a traction/displacement function within a cohesive zone model and used to predict the steady-state toughness of the interface. For this purpose, the plasticity of the Ni alloy must be known, including the plasticity length scale. Measurements obtained for a gamma-Ni superalloy are used and the toughness predicted over the full range of mode mixity. Additional results for a range of alloys are used to demonstrate the influences of yield strength and length scale.

First principles based predictions of the toughness of a metal/oxide interface

We describe a first-principles-based strategy to predict the macroscopic toughness of a gamma-Ni(Al)/alpha-Al2O3 interface. Density functional theory calculations are used to ascertain energy changes upon displacing the two materials adjacent to the interface, with relaxation conducted over all atoms located within adjoining rows. Traction/displacernent curves are obtained from derivatives of the energy. Calculations are performed in mode I (opening), mode II (shear) and at a phase angle of 45 degrees. The shear calculations are conducted for displacements along < 110 > and < 112 > of the Ni lattice. A generalized interface potential function is used to characterize the results. Initial fitting to both the shear and normal stress results is required to calibrate the unknowns. Thereafter, consistency is established by using the potential to predict other traction quantities. The potential is incorporated as a traction/displacement function within a cohesive zone model and used to predict the steady-state toughness of the interface. For this purpose, the plasticity of the Ni alloy must be known, including the plasticity length scale. Measurements obtained for a gamma-Ni superalloy are used and the toughness predicted over the full range of mode mixity. Additional results for a range of alloys are used to demonstrate the influences of yield strength and length scale.

K-shell ionization cross section of aluminium induced by low-energy highly charged argon ions

Al K-shell X-ray yields are measured with highly charged Arq+ ions (q = 12-16) bombarding against aluminium. The energy range of the Ar ions is from 180 to 380 keV. K-shell ionization cross sections of aluminium are also obtained from the yields data. The experimental data is explained within the framework of 2p pi-2p sigma s rotational coupling. When Ar ions with 2p-shell vacancies are incident on aluminium, the vacancies begin to reduce. Meanwhile, collisions against Al atoms lead to the production of new 2p-shell vacancies of Ar ions. These Ar 2p-shell vacancies will transfer to the 1s orbit of an Al atom via 2p pi-2p sigma s rotational coupling leading to the emission of a K-shell X-ray of aluminiun. A model is constructed based on the base of the above physical scenario. The calculation results of the model are in agreement with the experimental results.