Anomalous photoluminescence of InAs quantum dots implanted by Mn ions

The photoluminescence (PL) of Mn-implanted quantum dot (QD) samples after rapid annealing is studied. It is found that the blue shift of the PL peak of the QDs, introduced by the rapid annealing, decreases abnormally as the implantation dose increases. This anomaly is probably related to the migration of Mn atoms to the InAs QDs during annealing, which leads to strain relaxation when Mn atoms enter InAs QDs or to the suppression of the inter-diffusion of In and Ga atoms when Mn atoms surround QDs. Both effects will suppress the blue shift of the QD PL peaks. The temperature dependence of the PL intensity of the heavily implanted QDs confirms the existence of defect traps around the QDs. (c) 2006 Elsevier B.V. All rights reserved.

Photoinduced spin alignment of the magnetic ions in (Ga,Mn)As

Time-resolved Kerr rotation measurement in the (Ga,Mn)As diluted magnetic semiconductor allows direct observation of the dynamical properties of the spin system of the magnetic ions and the spin-polarized holes. Experimental results show that the magnetic ions can be aligned by the polarized holes, and the time scales of spin alignment and relaxation take place in tens and hundreds of picoseconds, respectively. The Larmor frequency and effective g factor obtained in the Voigt geometry show an unusual temperature dependence in the vicinity of the Curie temperature due to the exchange coupling between the photoexcited holes and magnetic ions. Such a spin coherent precession can be amplified or destructed by two sequential excitation pulses with circularly copolarized or oppositely polarized helicity, respectively. (c) 2006 American Institute of Physics.

Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si

Nanocrystalline diamond films were grown by a two-step process on Si(1 0 0) substrate, which was first pretreated by pure carbon ions bombardment. The bombarded Si substrate was then transformed into a hot-filament chemical vapor deposition (HFCVD) system for further growth. Using the usual CH4/H-3 feed gas ratio for micro crystalline diamond growth, nanodiamond crystallites were obtained. The diamond nucleation density is comparable to that obtained by biasing the substrate. The uniformly distributed lattice damage is proposed to be responsible for the formation of the nanodiamond. (C) 2002 Elsevier Science B.V. All rights reserved.

Violet/blue emission from hydrogenated amorphous carbon films deposited from energetic CH3+ ions and ion bombardment

Considering the complexity of the general plasma techniques, pure single CH3+ ion beams were selected for the deposition of hydrogenated amorphous (a) carbon films with various ion energies and temperatures. Photoluminescence (PL) measurements have been performed on the films and violet/blue emission has been observed. The violet/blue emission is attributed to the small size distribution of sp(2) clusters and is related to the intrinsic properties of CH3 terminals, which lead to a very high barrier for the photoexcited electrons. Ion bombardment plays an important role in the PL behavior. This would provide further insight into the growth dynamics of a-C:H films. (C) 2002 American Institute of Physics.

Intense room temperature near infrared emission from Al (3+) and Yb3+ ions

Intense near infrared emission was observed from Al3+ and Yb3+ ions co-implanted SiO2 film on silicon. It was found that the addition of Al3+ ions could remarkably improve the photoluminescence efficiency of Yb3+-implanted SiO2 film. No excitation power saturation was observed and trivial temperature quenching factor of 2 was achieved.

Broad-spectrum and long-lifetime emissions of Nd3+ ions in lead fluorosilicate glass

A novel Nd3+-doped lead fluorosilicate glass (NPS glass) is prepared by a two-step melting process. Based on the absorption spectrum a Judd-Ofelt theory analysis is made. The emission line width of NPS glass is 44.2nm. The fluorescence decay lifetime of the 4F3/2 level is 586±20μsec, and the stimulated emission cross-section is 0.87×10-20cm2 at 1056nm. A laser oscillation is occurred at 1062nm when pumped by 808nm Diode Laser. The slope efficiency is 23.7% with a 415mJ threshold. It is supposed that NPS glass is a good candidate for using in ultra-short pulse generation and amplification by the broad emission bandwidth and long fluorescence lifetime.