Intense room temperature near infrared emission from Al (3+) and Yb3+ ions
| Data(s) |
2004
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|---|---|
| Resumo |
Intense near infrared emission was observed from Al3+ and Yb3+ ions co-implanted SiO2 film on silicon. It was found that the addition of Al3+ ions could remarkably improve the photoluminescence efficiency of Yb3+-implanted SiO2 film. No excitation power saturation was observed and trivial temperature quenching factor of 2 was achieved. Intense near infrared emission was observed from Al3+ and Yb3+ ions co-implanted SiO2 film on silicon. It was found that the addition of Al3+ ions could remarkably improve the photoluminescence efficiency of Yb3+-implanted SiO2 film. No excitation power saturation was observed and trivial temperature quenching factor of 2 was achieved. zhangdi于2010-03-29批量导入 zhangdi于2010-03-29批量导入 IEEE. Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China IEEE. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Fonte |
Zhang, JG; Cheng, BW; Gao, JH; Yu, JZ; Wang, QM .Intense room temperature near infrared emission from Al (3+) and Yb3+ ions .见：IEEE .2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS,345 E 47TH ST, NEW YORK, NY 10017 USA ,2004,64-66 |
| Palavras-Chave | #光电子学 #FLUORESCENCE |
| Tipo |
会议论文 |
