Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si


Autoria(s): Liao MY; Meng XM; Zhou XT; Hu JQ; Wang ZG
Data(s)

2002

Resumo

Nanocrystalline diamond films were grown by a two-step process on Si(1 0 0) substrate, which was first pretreated by pure carbon ions bombardment. The bombarded Si substrate was then transformed into a hot-filament chemical vapor deposition (HFCVD) system for further growth. Using the usual CH4/H-3 feed gas ratio for micro crystalline diamond growth, nanodiamond crystallites were obtained. The diamond nucleation density is comparable to that obtained by biasing the substrate. The uniformly distributed lattice damage is proposed to be responsible for the formation of the nanodiamond. (C) 2002 Elsevier Science B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/11956

http://www.irgrid.ac.cn/handle/1471x/64948

Idioma(s)

英语

Fonte

Liao MY; Meng XM; Zhou XT; Hu JQ; Wang ZG .Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si ,JOURNAL OF CRYSTAL GROWTH,2002,236 (1-3):85-89

Palavras-Chave #半导体材料 #nucleation #chemical vapor deposition processes #diamond #nanomaterials #DIAMOND THIN-FILMS #AMORPHOUS-CARBON #PLASMAS #SYSTEM #FIELD
Tipo

期刊论文