Towards Batteryless Cardiac Implantable Electronic Devices – The Swiss Way

Energy harvesting devices are widely discussed as an alternative power source for todays active implantable medical devices. Repeated battery replacement procedures can be avoided by extending the implants life span, which is the goal of energy harvesting concepts. This reduces the risk of complications for the patient and may even reduce device size. The continuous and powerful contractions of a human heart ideally qualify as a battery substitute. In particular, devices in close proximity to the heart such as pacemakers, defibrillators or bio signal (ECG) recorders would benefit from this alternative energy source. The clockwork of an automatic wristwatch was used to transform the hearts kinetic energy into electrical energy. In order to qualify as a continuous energy supply for the consuming device, the mechanism needs to demonstrate its harvesting capability under various conditions. Several in-vivo recorded heart motions were used as input of a mathematical model to optimize the clockworks original conversion efficiency with respect to myocardial contractions. The resulting design was implemented and tested during in-vitro and in-vivo experiments, which demonstrated the superior sensitivity of the new design for all tested heart motions.

Direct energy conversion devices : a literature search /

Included are 208 unclassified references on nuclear direct energy conversion devices. Major emphasis is placed on auxiliary power devices suitable for use in satellites including reports on nuclear batteries, thermoelectric cells, thermionic conversion, and all phases of the SNAP program, although not all SNAP devices employ direct conversion. This search supersedes a previous search, TID-3540, Isotopic Power and Thermionic Conversion, compiled by Raymond L. Scott in December 1959.

Direct energy conversion devices : a literature search /

Included are 344 unclassified references on devices utilizing nuclear energy in the production of auxiliary power. The coverage includes nuclear batteries, thermoelectric cells, thermionic cells, and all phases of the SNAP program, although not all SNAP devices employ direct conversion. References from Nuclear Science Abstracts (NSA) through December 15, 1961, are included.

Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication /

"Issued May 1980."

Semiconductor measurement technology:

Title varies slightly.

Operations and Planning in Sustainable Power Systems

Thesis (Ph.D.)--University of Washington, 2016-06

Modeling of optical detection of spin-polarized carrier injection into light-emitting devices

We investigate the emission of multimodal polarized light from light emitting devices due to spin-aligned carrier injection. The results are derived through operator Langevin equations, which include thermal and carrier-injection fluctuations, as well as nonradiative recombination and electronic g-factor temperature dependence. We study the dynamics of the optoelectronic processes and show how the temperature-dependent g factor and magnetic field affect the degree of polarization of the emitted light. In addition, at high temperatures, thermal fluctuation reduces the efficiency of the optoelectronic detection method for measuring the degree of spin polarization of carrier injection into nonmagnetic semicondutors.

TEM characterization of nanostructure and chemistry of semiconductor quantum structures

The power of advanced transmission electron microscopy in determining the nanostructures and chemistry of nanosized materials on the applications in semiconductor quantum structures was demonstrated.

Design Strategies and Modelling of Low-Power Sigma-Delta Analog-to-Digital Converters

Oggi, i dispositivi portatili sono diventati la forza trainante del mercato consumer e nuove sfide stanno emergendo per aumentarne le prestazioni, pur mantenendo un ragionevole tempo di vita della batteria. Il dominio digitale è la miglior soluzione per realizzare funzioni di elaborazione del segnale, grazie alla scalabilità della tecnologia CMOS, che spinge verso l'integrazione a livello sub-micrometrico. Infatti, la riduzione della tensione di alimentazione introduce limitazioni severe per raggiungere un range dinamico accettabile nel dominio analogico. Minori costi, minore consumo di potenza, maggiore resa e una maggiore riconfigurabilità sono i principali vantaggi dell'elaborazione dei segnali nel dominio digitale. Da più di un decennio, diverse funzioni puramente analogiche sono state spostate nel dominio digitale. Ciò significa che i convertitori analogico-digitali (ADC) stanno diventando i componenti chiave in molti sistemi elettronici. Essi sono, infatti, il ponte tra il mondo digitale e analogico e, di conseguenza, la loro efficienza e la precisione spesso determinano le prestazioni globali del sistema. I convertitori Sigma-Delta sono il blocco chiave come interfaccia in circuiti a segnale-misto ad elevata risoluzione e basso consumo di potenza. I tools di modellazione e simulazione sono strumenti efficaci ed essenziali nel flusso di progettazione. Sebbene le simulazioni a livello transistor danno risultati più precisi ed accurati, questo metodo è estremamente lungo a causa della natura a sovracampionamento di questo tipo di convertitore. Per questo motivo i modelli comportamentali di alto livello del modulatore sono essenziali per il progettista per realizzare simulazioni veloci che consentono di identificare le specifiche necessarie al convertitore per ottenere le prestazioni richieste. Obiettivo di questa tesi è la modellazione del comportamento del modulatore Sigma-Delta, tenendo conto di diverse non idealità come le dinamiche dell'integratore e il suo rumore termico. Risultati di simulazioni a livello transistor e dati sperimentali dimostrano che il modello proposto è preciso ed accurato rispetto alle simulazioni comportamentali.

Advances in femtosecond micromachining and inscription of micro and nano photonic devices

This thesis has focused on three key areas of interest for femtosecond micromachining and inscription. The first area is micromachining where the work has focused on the ability to process highly repeatable, high precision machining with often extremely complex geometrical structures with little or no damage. High aspect ratio features have been demonstrated in transparent materials, metals and ceramics. Etch depth control was demonstrated especially in the work on phase mask fabrication. Practical chemical sensing and microfluidic devices were also fabricated to demonstrate the capability of the techniques developed during this work. The second area is femtosecond inscription. Here, the work has utilised the non-linear absorption mechanisms associated with femtosecond pulse-material interactions to create highly localised refractive index changes in transparent materials to create complex 3D structures. The techniques employed were then utilised in the fabrication of Phase masks and Optical Coherence Tomography (OCT) phantom calibration artefacts both of which show the potential to fill voids in the development of the fields. This especially the case for the OCT phantoms where there exists no previous artefacts of known shape, allowing for the initial specification of parameters associated with the quality of OCT machines that are being taken up across the world in industry and research. Finally the third area of focus was the combination of all of the techniques developed through work in planar samples to create a range of artefacts in optical fibres. The development of techniques and methods for compensating for the geometrical complexities associated with working with the cylindrical samples with varying refractive indices allowed for fundamental inscription parameters to be examined, structures for use as power monitors and polarisers with the optical fibres and finally the combination of femtosecond inscription and ablation techniques to create a magnetic field sensor with an optical fibre coated in Terfenol-D with directional capability. Through the development of understanding, practical techniques and equipment the work presented here demonstrates several novel pieces of research in the field of femtosecond micromachining and inscription that has provided a broad range of related fields with practical devices that were previously unavailable or that would take great cost and time to facilitate.

Simultaneous clock recovery and data regeneration using a nonlinear optical loop mirror as an all-optical mixer

High-speed optical clock recovery, demultiplexing and data regeneration will be integral parts of any future photonic network based on high bit-rate OTDM. Much research has been conducted on devices that perform these functions, however to date each process has been demonstrated independently. A very promising method of all-optical switching is that of a semiconductor optical amplifier-based nonlinear optical loop mirror (SOA-NOLM). This has various advantages compared with the standard fiber NOLM, most notably low switching power, compact size and stability. We use the SOA-NOLM as an all-optical mixer in a classical phase-locked loop arrangement to achieve optical clock recovery, while at the same time achieving data regeneration in a single compact device

Numerical modelling of devices and advanced transmission schemes embracing Raman effect

This thesis presents a theoretical investigation on applications of Raman effect in optical fibre communication as well as the design and optimisation of various Raman based devices and transmission schemes. The techniques used are mainly based on numerical modelling. The results presented in this thesis are divided into three main parts. First, novel designs of Raman fibre lasers (RFLs) based on Phosphosilicate core fibre are analysed and optimised for efficiency by using a discrete power balance model. The designs include a two stage RFL based on Phosphosilicate core fibre for telecommunication applications, a composite RFL for the 1.6 μm spectral window, and a multiple output wavelength RFL aimed to be used as a compact pump source for fiat gain Raman amplifiers. The use of Phosphosilicate core fibre is proven to effectively reduce the design complexity and hence leads to a better efficiency, stability and potentially lower cost. Second, the generalised Raman amplified gain model approach based on the power balance analysis and direct numerical simulation is developed. The approach can be used to effectively simulate optical transmission systems with distributed Raman amplification. Last, the potential employment of a hybrid amplification scheme, which is a combination between a distributed Raman amplifier and Erbium doped amplifier, is investigated by using the generalised Raman amplified gain model. The analysis focuses on the use of the scheme to upgrade a standard fibre network to 40 Gb/s system.

Ultrashort pulse generation from diode laser devices

This thesis presents a detailed, experiment-based study of generation of ultrashort optical pulses from diode lasers. Simple and cost-effective techniques were used to generate high power, high quality optical short pulses at various wavelength windows. The major achievements presented in the thesis is summarised as follows. High power pulses generation is one of the major topics discussed in the thesis. Although gain switching is the simplest way for ultrashort pulse generation, it proves to be quite effective to deliver high energy pulses on condition that the pumping pulses with extremely fast rising time and high enough amplitude are applied on specially designed pulse generators. In the experiment on a grating-coupled surface emitting laser (GCSEL), peak power as high as 1W was achieved even when its spectral bandwidth was controlled within 0.2nm. Another experiment shows violet picosecond pulses with peak power as high as 7W was achieved when the intensive electrical pulses were applied on optimised DC bias to pump on InGaN violet diode laser. The physical mechanism of this phenomenon, as we considered, may attributed to the self-organised quantum dots structure in the laser. Control of pulse quality, including spectral quality and temporal profile, is an important issue for high power pulse generation. The ways to control pulse quality described in the thesis are also based on simple and effective techniques. For instance, GCSEL used in our experiment has a specially designed air-grating structure for out-coupling of optical signals; hence, a tiny flat aluminium mirror was placed closed to the grating section and resulted in a wavelength tuning range over 100nm and the best side band suppression ratio of 40dB. Self-seeding, as an effective technique for spectral control of pulsed lasers, was demonstrated for the first time in a violet diode laser. In addition, control of temporal profile of the pulse is demonstrated in an overdriven DFB laser. Wavelength tuneable fibre Bragg gratings were used to tailor the huge energy tail of the high power pulse. The whole system was compact and robust. The ultimate purpose of our study is to design a new family of compact ultrafast diode lasers. Some practical ideas of laser design based on gain-switched and Q-switched devices are also provided in the end.

Simulation of power station protection equipment

Computer programs have been developed to enable the coordination of fuses and overcurrent relays for radial power systems under estimated fault current conditions. The grading curves for these protection devices can be produced on a graphics terminal and a hard copy can be obtained. Additional programs have also been developed which could be used to assess the validity of relay settings (obtained under the above conditions) when the transient effect is included. Modelling of a current transformer is included because transformer saturation may occur if the fault current is high, and hence the secondary current is distorted. Experiments were carried out to confirm that distorted currents will affect the relay operating time, and it is shown that if the relay current contains only a small percentage of harmonic distortion, the relay operating time is increased. System equations were arranged to enable the model to predict fault currents with a generator transformer incorporated in the system, and also to include the effect of circuit breaker opening, arcing resistance, and earthing resistance. A fictitious field winding was included to enable more accurate prediction of fault currents when the system is operating at both lagging and leading power factors prior to the occurrence of the fault.

Radiation effects in metal-oxide-semiconductor capacitors

An investigation has been undertaken into the effects of various radiations on commercially made Al-SiO2-Si Capacitors (MOSCs). Detailed studies of the electrical and physical nature of such devices have been used to characterise both virgin and irradiated devices. In particular, an investigation of the nature and causes of dielectric breakdown in MOSCs has revealed that intrinsic breakdown is a two-stage process dominated by charge injection in a pre-breakdown stage; this is associated with localised high-field injection of carriers from the semiconductor substrate to interfacial and bulk charge traps which, it is proposed, leads to the formation of conducting channels through the dielectric with breakdown occurring as a result of the dissipation of the conduction band energy. A study of radiation-induced dielectric breakdown has revealed the possibility of anomalous hot-electron injection to an excess of bulk oxide traps in the ionization channel produced by very heavily ionizing radiation, which leads to intrinsic breakdown in high-field stressed devices. These findings are interpreted in terms of a modification to the model for radiation-induced dielectric breakdown based upon the primary dependence of breakdown on charge injection rather than high-field mechanisms. The results of a detailed investigation of charge trapping and interface state generation in such MOSCs due to various radiations has revealed evidence of neutron induced interface states, and of the generation of positive oxide charge in devices due to all of the radiations tested. In particular, the greater the linear energy transfer of the radiation, the greater the magnitude of charge trapped in the oxide and the greater the number of interface states generated. These findings are interpreted in terms of Si-H and Si-OH bond-breaking at the Si-SiO2 interface which is enhanced by charge carrier transfer to the interface and by anomalous charge injection to compensate for the excess of charge carriers created by the radiation.