Efficient Mode-locked and Q-switched Nd∶YVO_4 Laser with Semiconductor Saturable Absorber Mirror

We reported an efficient diode pumped Nd ! YVO, 1 064 nm laser passively mode-locked and Q-switched by a semiconductor saturable absorber mirror(SESAM). At the incident pump power of 7. 5 W, 2. 81 W average output power was obtained during stable CW mode locking with a repetition rate of 111 MHz. The optical conversion efficiency was 37. 5% , and the slope efficiency was 39%. So far as we know, this is the highest optical-optical conversion efficiency with a SESAM at home.

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the full-width half maximum of 180" and 185" for (0002) symmetric reflection and (10(-1)2) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405.9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes.

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

High-speed DFB laser and EMLs

High speed reliable 1.55 mum AlGaInAs multi-quantum well ridge waveguide (RW) DFB laser is developed with a 9GHz -3dB bandwidth. A high speed self aligned constricted mesa 1.55 mum DFB laser is achieved with a 9.1GHz -3dB bandwidth and a more than 20mW output power. A cost effective single RW electroabsorption modulated DFB laser (EMLs) is proposed and successfully fabricated by adopting selective area growth techniques:. a penalty free transmission at 2.5Gbps over 280Km normal G.652 single mode fiber is realized by using this EML as light source. For achieving a better performance EMLs. a gain-coupled DFB laser with etched quantum wells is successfully integrated with a electroabsorption modulator (EAM) for a high single mode yield. the wavelength of a EML is tuned in a 3.2nm range by a integrated thin-film heater for the wavelength routing. a buried heterostructure DFB laser is also successfully integrated with a RW EAM for a lower threshold current. lower EAM parasitic capacitance and higher output power.

High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD

Low threshold current and high temperature operation of 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) are reported in this paper. 650nm laser diodes with threshold current as low as 22-24mA at room temperature, and the operating temperature over 90 degrees C at CW output power 5 mW were achieved in this study. These lasers are stable during 72 hours burn in under 5mW at 90 degrees C.

Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

nThermal processing of strained ln(0.2)Ga(0.8)As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It was found that rapid thermal annealing can improve the 77 K photoluminescence efficiency and electron emission from the active layer, due to removal of nonradiative centers from the InGaAs/GaAs interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing increases simultaneously the density of DX centers in the AlGaAs graded layer. The current stressing experiments of post-growth and annealed laser diodes are indicative of a corresponding increase in the concentration of DX centers, suggesting that DX centers may be responsible for the degradation of laser diode performance.

Fabrication of nano-sized grains by pulsed laser surface melting

In this work, the formation and characterization of nano-sized grains on the modified surfaces of GCr15 and H13 steels have been investigated. The material was processed by pulsed laser surface melting (LSM) under different depths of de-ionized water. The microstructures and phases of the melted zones were examined by x-ray diffraction, environmental field emission scanning electron microscopy and high resolution transmission electron microscopy. The results indicate that LSM under water can successfully fabricate nano-scaled grains on the surfaces of steel, due to the rapid solidification and crystallization by heterogeneous nucleation. The elemental segregation of chromium and activated heterogeneous nucleation mechanism of austenite in liquid metal play a key role in the formation of nano-sized grains at high cooling rates. This one-step technique provides us a new way to prepare uniform nano-scaled grains, and is of great importance for further understanding the growth of nano-materials under extreme conditions.

A Semi-Quantitative Analysis of Essential Micronutrient in Folium Lycii Using Laser-Induced Breakdown Spectroscopy Technique

In this paper, the capabilities of laser-induced break down spectroscopy (LIBS) for rapid analysis to multi-component plant are illustrated using a 1064 nm laser focused onto the surface of folium lycii. Based on homogeneous plasma assumption, nine of essential micronutrients in folium lycii are identified. Using Saha equation and Boltzmann plot method electron density and plasma temperature are obtained, and the irrelative concentration (Ca, Mg, Al, Si, Ti, Na, K, Li, and Sr) are obtained employing a semi-quantitative method.

ZnO clusters encapsulated inside micropores of zeolites studied by UV Raman and laser-induced luminescence spectroscopies

Using microporous zeolites as host, sub-nanometric ZnO clusters were prepared in the micropores of the host by the incipient wetness impregnation method. A small amount of sub-nanometric ZnO clusters were introduced into the channels of HZSM-5 zeolite, whereas a large quantity of sub-nanometric ZnO clusters can be accommodated in the supercages of HY zeolite and no macrocrystalline ZnO exists on the extra surface of the HY material. The vibrations of the zeolite framework and ZnO were characterized by UV Raman spectroscopy. The optical properties of these ZnO clusters were studied by UV-visible absorption spectroscopy and laser-induced luminescence spectroscopy. It is found that there are strong host-guest interactions between the framework oxygen atoms of zeolite and ZnO clusters influencing the motions of the framework oxygen atoms. The interaction may be the reason why ZnO clusters are stabilized in the pores of zeolites. Different from bulk ZnO materials, these sub-nanometric ZnO clusters exhibit their absorption onset below 265 nm and show a purple luminescence band (centered at 410-445 nm) that possesses high quantum efficiency and quantum size effect. This purple luminescence band most likely originates from the coordinatively unsaturated Zn sites in sub-nanometric ZnO clusters. On the other hand, the differences in the pore structure between HZSM-5 and HY zeolites cause the absorption edge and the purple luminescence band of ZnO clusters in ZnO/HZSM-5 show a red shift in comparison with those of ZnO clusters in ZnO/HY.

Influence of laser-glazing on hot corrosion resistance of yttria-stabilized zirconia TBC in molten salt mixture of V2O5 and Na2SO4

Plasma-sprayed 8YSZ (zirconia stabilized with 8 wt% yttria)/NiCoCrAlYTa thermal barrier coatings (TBCs) were laser-glazed using a continuous-wave CO2 laser. Open pores within the coating surface were eliminated and an external densified layer was generated by laser-glazing. The hot corrosion resistances of the plasma-sprayed and laser-glazed coatings were investigated. The two specimens were exposed for the same period of 100 h at 900 degrees C to a salt mixture of vanadium pentoxide (V2O5) and sodium sulfate (Na2SO4). Serious crack and spallation occurred in the as-sprayed coating, while the as-glazed coating exhibited good hot corrosion behavior and consequently achieved a prolonged lifetime. The results showed that the as-sprayed 8YSZ coating achieved remarkably improved hot corrosion resistance by laser-glazing.

Near-infrared luminescent mesoporous materials covalently bonded with ternary lanthanide [Er(III), Nd(III), Yb(III), Sm(III), Pr(III)] complexes

New near-infrared-luminescent mesoporous materials were prepared by linking ternary lanthanide (Er3+, Nd3+, Yb3+, Sm3+, Pr3+) complexes to the ordered mesoporous MCM-41 through a functionalized 1,10-phenanthroline (phen) group 5-(N,N-bis-3-(triethoxysilyl)propyl)ureyl-1,10-phenanthroline. The resulting materials (denoted as Ln(hfth)(3)phen-M41 and Pr(tfnb)(3)phen-M41; Ln=Er, Yb, Nd, Sm; hfth = 4,4,5,5,6,6,6-heptafluoro-1-(2-thienyl)hexane-1,3-dionate; tfnb = 4,4,4-trifluoro-1-(2-naphthyl)- 1, 3-butanedionate) were characterized by powder X-ray diffraction, N-2 adsorption/desorption, and elemental analysis. Luminescence spectra of these lanthanide-complex functionalized materials were recorded, and the luminescence decay times were measured. Upon excitation at the absorption of the organic ligands, all these materials show the characteristic NIR luminescence of the corresponding lanthanide (Er3+, Nd3+, Yb3+, Sm3+, Pr3+) ions by sensitization from the organic ligands moiety. The good luminescent performances enable these NIR-luminescent mesoporous materials to have possible applications in optical amplification (operating at 1300 or 1500 nm), laser systems, or medical diagnostics.

Degradation of polyimide induced by nitrogen laser irradiation

The degradation behavior of polyimide (PMDA-ODA) induced by nitrogen laser irradiation was studied. The changes in the surface morphology and the composition of the irradiated polyimide films were examined by scanning electron microscopy, X-ray photoelectron spectroscopy and FT-IR spectroscopy. The initial reaction was achieved by photochemical degradation of polyimide in the highly electronic excited state by the absorption of a second 337 nm photon. Atmospheric oxygen sequentially reacted with the produced radicals to form a highly oxidized layer. The formation of carbonyl group was enhanced by the heat remaining on the irradiated polyimide film surfaces. (C) 2000 Elsevier Science B.V. All rights reserved.

Thermal influence on excimer-laser-induced electrical conductivity on polyimide film surfaces

The thermal influence on the electrical conductivity of polyimide film surfaces induced by KrF-laser irradiation was investigated, The formation of conducting phases was demonstrated to be highly temperature sensitive, as evidenced by strong dependence of the electrical conductivity on repetition rate and ambient temperature. XPS and Raman studies showed that the efficiency of the formation of conducting phases could be enhanced by the increase of temperature on irradiated polyimide film surfaces. After the disruption of polymeric chain, the carbon-enriched clusters remained on the irradiated polyimide film surfaces organized into polycrystalline graphite-like clusters responsible for electrical conductivity. The resulting dangling bonds from the decomposition process of polyimide acted as centers for the rearrangement of carbon-enriched clusters. It is suggested that the motion of radicals was promoted with increasing the temperature. Therefore the formation of polycrystalline graphite-like clusters benefited from high remaining temperature on the irradiated polyimide film surfaces. These results revealed that thermal influence played a dominant role on the formation of conducting phases.

Characteristics of the conductive polyimide film surfaces induced by ultraviolet laser beam

A conducting layer with the conductivity of 1.2 Omega(-1)cm(-1) stripped in a solvent from KrF-laser-irradiated polyimide thin film is taken as a sample to determine the microstructure of the conducting layer. Fourier-transform infrared and X-ray photoelectron spectroscopies show the formation of the carbon-rich clusters after irradiation. The element analysis gives the atomic ratio of C:H:N:O for the carbon-rich cluster as 60:20:3:1. Wide-angle X-ray diffraction indicates that the conducting layer is mainly amorphous carbon with a small amount of the short-range ordered carbon-rich clusters. This study suggests a structural model with three-layer carbon sheets linked together in a random fashion for the short-range ordered carbon-rich clusters. The interplanar spacing is 3.87 Angstrom and the layer diameter 25 Angstrom. The transport model of variable-range hopping in three dimensions is used to explain the conducting behavior of the conducting layer. In our case, the short-range ordered carbon-rich clusters are assumed to be conducting islands dispersed in the amorphous carbon-rich cluster matrix.

Microstructure and wear properties of laser clad Fe based amorphous composite coatings

A FeNiSiBV amorphous composite coating was developed by laser cladding of metallic powders on AISI 1020 low carbon steel substrate. The coatings were studied using X-ray diffraction, transmission electron microscopy and scanning electron microscopy. The coating reveals different microstructures along the depth of the coating. The transition zone exhibits good metallurgical bonding between the substrate and the coating. The layer consists of amorphous phase in majority and nanocrystalline phase/crystalline phase in minority. Accompanied with the nanocrystalline phase, the amorphous phase is concentrated in the middle of the coating. The crystalline phase in the coating is identified as Fe2B. A gradient distribution of the microhardness ranges from 1208 HV0.2 to 891 HV0.2 in the coating along the depth. The coating shows higher microhardness and better wear property than the substrate.