Applicability of the van der Pauw-Hall measurement technique to implanted samples

The application of the van der Pauw-Hall measurement technique to implanted samples in which the mobility varies with depth has still not been fully justified. A proof that the technique is in fact applicable in this situation is given. Journal of Applied Physics is copyrighted by The American Institute of Physics.

Competing tetragonal and monoclinic phases in Ni2.2Mn0.80Ga

Temperature dependent synchrotron x-ray powder diffraction, differential scanning calorimetry, and magnetic measurements were performed on Ni2+xMn1-xGa (x=0.20 and 0.35) magnetic shape memory alloys. For x=0.20, though the monoclinic phase is thermodynamically stable, a trace of residual stress can stabilize a tetragonal phase. The residual-stress-induced tetragonal phase transforms to the cubic austenite phase over an unusually large temperature range (348 K < T < 693 K), suggesting extremely slow kinetics of transformation. In contrast to x=0.20, the thermodynamically stable phase of x=0.35 is tetragonal and this composition exhibits the usual features of a reversible martensitic transformation. The results suggest that for x=0.20 the monoclinic and tetragonal phases are nearly degenerate.

Rapid in situ processing for real-time holographic interferometry

Experiments are described which show that a monobath can be used for rapid in situ processing in a liquid gate for real-time holographic interferometry. This also permits utilization of a very simple solution handling system. Changes in emulsion thickness are reduced to an acceptable level and problems of matching refractive indices are eliminated by exposing and viewing the holograms in water. Excellent null patterns are obtained and real-time holographic interferometry can be carried out over long periods of time.

spin Precession of a Charged Particle in a Magnetic Field Including the Effects of General Relativity

Abstract is not available.

Studies on dielectric behavior of insulator-conductor composites

This paper describes the dielectric behavior of an insulator-conductor composite, namely, the wax-graphite composite. The variation of specific capacitance of these composites with parameters such as volume fraction and grain size of the conducting particles and temperature has been studied. These observed variations have been explained using the same model [C. Rajagopal and M. Satyam, J. Appl. Phys. 49, 5536 (1978)] which explains electrical conduction in composites. The specific capacitance of these materials appears to be governed by the contact capacitance between the conducting particles and the number of contacts each particle has with its neighbors. The variation of specific capacitance with temperature is attributed to the change in contact area.

Unsteady Motion of a Stratified Rotating Viscous Fluid between Two Disks

Abstract is not available.

Cosmological Constant and Scalar Gravitons

If a cosmological term is included in the equations of general relativity, the linearized equations can be interpreted as a tensor-scalar theory of finite-range gravitation. The scalar field cannot be transformed away be a gauge transformation (general co-ordinate transformation) and so must be interpreted as a physically significant degree of freedom. The hypothesis that a massive spin-two meson (mass m2) satisfied equations identical in form to the equations of general relativity leads to the prediction of a massive spin-zero meson (mass m0), the ratio of masses being m0 / m2 = 3*3.

Growth of ionization currents in nitrogen

Townsend's primary and secondary ionization coefficients α/p and γ were determined in nitrogen over a wide range of E/p (100-1000 V cm−1 Torr−1) and p (0·4 to 12 Torr at 0 °C) using the pressure variation technique. This technique, along with the Gosseries method of evaluation of ionization coefficients, seems to be more suitable at higher values of E/p, since the errors in these coefficients could be minimized by a suitable selection of p and d, thus eliminating the non-equilibrium ionization condition.

Optimum geometry for uniform deposits on a rotating substrate from a point source

The application of an algorithm shows that maximum uniformity of film thickness on a rotating substrate is achieved for a normalized source-to-substrate distance ratio, h/r =1.183.

On uniformity of film thickness on rotating substrates having a large source-to-substrate height

Abstract is not available.

Metal-insulator-semiconductor capacitors with bismuth oxide as insulator

Metal-insulator-semiconductor capacitors using aluminum Bi2O3 and silicon have been studied for varactor applications. Reactively sputtered Bi2O3 films which under suitable proportions of oxygen and argon and had high resistivity suitable for device applications showed a dielectric constant of 25. Journal of Applied Physics is copyrighted by The American Institute of Physics.

Resistivity noise in crystalline magnetic nanowires and its implications to domain formation and kinetics

We have investigated the time-dependent fluctuations in electrical resistance, or noise, in high quality crystalline magnetic nanowires within nanoporous templates. The noise increases exponentially with increasing temperature and magnetic field, and has been analyzed in terms of domain wall depinning within the Neel-Brown framework. The frequency-dependence of noise also indicates a crossover from nondiffusive kinetics to long-range diffusion at higher temperatures, as well as a strong collective depinning, which need to be considered when implementing these nanowires in magnetoelectronic devices.

Photoimpedance characterization of polymer field-effect transistor

The small signal ac response is measured across the source-drain terminals of poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) field-effect transistor under dc bias to obtain the equivalent circuit parameters in the dark, and under a monochromatic light (540 nm) of various intensities. The numerically simulated response based on these parameters shows deviation at low frequency which is related to the charge accumulation at the interface and the contact resistance at the electrodes. This method can be used to differentiate the photophysical phenomena occurring in the bulk from that at the metal-semiconductor interface for polymer field-effect transistors. ©2009 American Institute of Physics

Uniformity of film thickness on rotating planetary planar substrates

For the purposes of obtaining a number of components with nearly identical thickness distributions over the substrate area and of minimizing the inhomogeneities of the film, it is logical to presume that a substrate rotating on its own axis and revolving around another axis will give more uniformity in film thickness than a substrate only revolving around one axis. In relation to the practical applications, an investigation has been undertaken to study the refinement that can be achieved by using a planar planetary substrate holder. It is shown theoretically that the use of the planetary substrate holder under ideal conditions of source and geometry does not offer any further improvement in uniformity of thickness over the conventional rotary work-holder. It is also shown that the geometrical parameters alone have little influence over the uniformity achieved on a planetary substrate, because of the complex cyclidal motion of any point on it. However, for any given geometry, a non-integral speed ratio of the planetary substrate and the work-holder shows considerably less variation in thickness over the substrate area.