Luminescence studies on nitride quaternary alloys double quantum wells
Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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Data(s) |
20/10/2012
20/10/2012
2008
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Resumo |
We present theoretical photoluminescence (PL) spectra of undoped and p-doped Al(x)In(1-xy)Ga(y)N/Al(X)In(1) (X) (Y)Ga(Y)N double quantum wells (DQWs). The calculations were performed within the k.p method by means of solving a full eight-band Kane Hamiltonian together with the Poisson equation in a plane wave representation, including exchange-correlation effects within the local density approximation. Strain effects due to the lattice mismatch are also taken into account. We show the calculated PL spectra, analyzing the blue and red-shifts in energy as one varies the spike and the well widths, as well as the acceptor doping concentration. We found a transition between a regime of isolated quantum wells and that of interacting DQWs. Since there are few studies of optical properties of quantum wells based on nitride quaternary alloys, the results reported here will provide guidelines for the interpretation of forthcoming experiments. (C) 2008 Elsevier B.V. All rights reserved. Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) CNPq CAPES Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) FAPESP Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) |
Identificador |
APPLIED SURFACE SCIENCE, v.254, n.23, p.7790-7793, 2008 0169-4332 http://producao.usp.br/handle/BDPI/29422 10.1016/j.apsusc.2008.02.034 |
Idioma(s) |
eng |
Publicador |
ELSEVIER SCIENCE BV |
Relação |
Applied Surface Science |
Direitos |
restrictedAccess Copyright ELSEVIER SCIENCE BV |
Palavras-Chave | #photoluminescence #p-type doping #nitride semiconductors #double quantum wells #AlInGaN quaternary alloys #LOCALIZATION #Chemistry, Physical #Materials Science, Coatings & Films #Physics, Applied #Physics, Condensed Matter |
Tipo |
article original article publishedVersion |