Chlorine NQR in 3-amino-2-chloropyridine and 2-chloro-5-nitropyridine

Temperature dependence of 35Cl nuclear quadrupole resonance (NQR) frequencies has been studied in 3-amino-2-chloropyridine and 2-chloro-5-nitropyridine from 77 to 298 K. The data were analysed and the torsional frequencies regarding internal motions in the molecules evaluated in the above temperature range using Bayer's theory and Brown's method.

Properties of iron related quenched-in levels in p-silicon

The electrical and optical properties of the thermally induced quenched-in levels in p-silicon which have heen attributed to iron are studied. The two levels, HI and H2, are located at Ev + 0.42 eV and Ev + 0.52 eV, respectively, as determined by TSCAP, DLTS, and transient photocapacitance methods. The photoionization cross sections are well described by Lucovsky's model. The hole capture by H1 is temperature dependent; a barrier of 40 meV is measured. However, multiphonon emission mechanism cannot be invoked to explain this temperature dependence due to the inferred zero lattice relaxation. The source of iron contamination is found to be the ambient conditions, in particular the quartz tube. The conflicting reports regarding the stability and the variation in the reported capture cross section values suggests that the observed Ev + 0.4 eV level must be a complex centre. The inferred near zero lattice relaxation during the electron transition implies weak coupling to the host lattice.

Electrical transport and crystallization studies of glassy semiconducting Si20Te80 alloy at high pressure

The effect of pressure on the electrical resistivity of bulk Si20Te80 glass is reported. Results of calorimetric, X-ray and transmission electron microscopy investigations at different stages of crystallization of bulk Si20Te80 glass are also presented. A pressure induced glass-to-crystal transition occurs at a pressure of 7 GPa. Pressure and temperature dependence of the electrical resistivity of Si20Te80 glass show the observed transition is a pressure induced glassy semiconductor to crystalline metal transition. The glass also exhibits a double Tg effect and double stage crystallization, under heating. The differences between the temperature induced crystallization (primary crystallization) and pressure induced congruent crystallization are discussed.

Pressure induced polymorphous crystallization in bulk Ge20Te80 glass

The pressure and temperature dependence of the electrical resistivity of bulk glassy Ge20Te80 is reported. The effect of annealing is also studied. The glass undergoes a polymorphous or congruent crystallization under high pressures. The high pressure phase is found to have fcc structure with Image . Under thermal treatment the glass undergoes the double stage crystallization. The sample annealed at the first crystallization temperature shows a pressure induced semiconductor-to-metal transition at 4.0 GPa pressure and the crystalline Ge20Te80 samples show the transition at 7 GPa pressure.

Magnetic Field Induced Instabilities In Localized Two-Dimensional Electron Systems

The results of extensive transport studies in localized regime of mesoscopic two-dimensional electron systems (2DES) with varying disorder are presented. A quick overview of previously achieved result is given. The main focus is on the observation of density dependent instabilities manifested by strong resistance oscillations induced by high perpendicular magnetic fields B-perpendicular to. While the amplitude of the oscillations is strongly enhanced with increasing B-perpendicular to, their position in electron density remains unaffected. The temperature dependence of resistivity shows a transition from an activated behaviour at high temperature to a saturated behaviour at low T. In the positions of resistance minima, the T dependence can even become metal-like (d rho/dT > 0). The activation energies obtained from the high T behaviour exhibit a formation of plateaux in connection with the resistance oscillations when analyzed as a function of electron density. We suggest the interplay between a strongly interacting electron phase and the background disorder as a possible explanation for our observation.

Thermoelectric Properties of Co4Sb12 Skutterudite Materials with Partial In Filling and Excess In Additions

The properties of Co4Sb12 with various In additions were studied. X-ray diffraction revealed the presence of the pure δ-phase of In0.16Co4Sb12, whereas impurity phases (γ-CoSb2 and InSb) appeared for x = 0.25, 0.40, 0.80, and 1.20. The homogeneity and morphology of the samples were observed by Seebeck microprobe and scanning electron microscopy, respectively. All the quenched ingots from which the studied samples were cut were inhomogeneous in the axial direction. The temperature dependence of the Seebeck coefficient (S), electrical conductivity (σ), and thermal conductivity (κ) was measured from room temperature up to 673 K. The Seebeck coefficient of all In-added Co4Sb12 materials was negative. When the filler concentration increases, the Seebeck coefficient decreases. The samples with In additions above the filling limit (x = 0.22) show an even lower Seebeck coefficient due to the formation of secondary phases: InSb and CoSb2. The temperature variation of the electrical conductivity is semiconductor-like. The thermal conductivity of all the samples decreases with temperature. The central region of the In0.4Co4Sb12 ingot shows the lowest thermal conductivity, probably due to the combined effect of (a) rattling due to maximum filling and (b) the presence of a small amount of fine-dispersed secondary phases at the grain boundaries. Thus, regardless of the non-single-phase morphology, a promising ZT (S 2 σT/κ) value of 0.96 at 673 K has been obtained with an In addition above the filling limit.

Experimental study of the damping coefficient variations in zinc crystal

Much work has been done on obtaining empirical stress-velocity relations and evaluating the temperature dependence and activation energy of plastic deformation /1, 2/. Another prevalent concept is that of the drag coefficient and its variation with degree of crystal imperfection /3/. Significant differences and discrepancies exist in the reported values /2, 4/. Although it is recognised that the yield point is caused by point interstitials and aggregates, little has been done on the evaluation of specific crystal-solute combinations and interaction parameters. Some of the first efforts, in this direction were performed by Wain and Cottrell /5/.

Impression creep of zinc and the rate-controlling dislocation mechanism of plastic flow at high temperatures

The impression creep behaviour of zinc is studied in the range 300 to 500 K and the results are compared with the data from conventional creep tests. The steady-state impression velocity is found to exhibit the same stress and temperature dependence as in conventional tensile creep with the same power law stress exponent. Also studied is the effect of indenter size on the impression velocity. The thermal activation parameters for plastic flow at high temperatures derived from a number of testing techniques agree reasonably well. Grain boundary sliding is shown to be unimportant in controlling the rate of plastic flow at high temperatures. It is observed that the Cottrell-Stokes law is obeyed during high-temperature deformation of zinc. It is concluded that a mechanism such as forest intersection involving attractive trees controls the high-temperature flow rather than a diffusion mechanism.

Metallization and crystallization of semiconducting amorphous Ga20Te80 alloy under high pressure

Pressure and temperature dependence of the electrical resistivity of amorphous Ga20Te80 alloy is reported for the first time. The alloy undergoes a pressure induced amorphous semiconductor-to-crystalline metal phase transition at 6.5 ± 0.5 GPa. The high pressure crystalline phase is a mixture of Te and GaTe3 phases.

Electrical transport in layered crystalline semiconductors GeS doped with Ag, P impurities at high pressure

A study of the transport properties of layered crystalline semiconductors GeS (undoped and doped with Ag, P impurity) under quasihydrostatic pressure using Bridgman anvil system is made for the first time. Pressure-induced effects in undoped crystals reveal initial rise in resistivity followed by two broad peaks at higher pressures. Silver doping induces only minor changes in the behaviour except removing the second peak. Phosphorous impurity is found to have drastic effect on the transport properties. Temperature dependence of the resistivity exhibits two activation energies having opposite pressure coefficients. Results are discussed in the light of intrinsic features of the layered semiconductors.

Chlorine-35 Nuclear Quadrupole Resonance Studies in 2,3- and 3,5-Dichloroanisoles

The temperature variation of the 3’Cl n.q.r. frequencies in 3,5- and 2,3- dichloroanisoles has been reported here. Both compounds show two lines each, and these have been assigned to the two chlorines in the same molecule with the help of the additive model for the substituent effect. The temperature dependence has been analysed in terms of Bayer-Kushida-Brown model.The torsional frequencies and their temperature dependence have been calculated numerically under a two-mode approximation. 0.n comparing the results in 3,5-dichloroanisole with those in 3,5-dichlorophenol it can be seen that they show similar behaviour owing to the absence of hydrogen bonding in both.

Theory of freezing in simple systems

The transition parameters for the freezing of two one-component liquids into crystalline solids are evaluated by two theoretical approaches. The first system considered is liquid sodium which crystallizes into a body-centered-cubic (bcc) lattice; the second system is the freezing of adhesive hard spheres into a face-centered-cubic (fcc) lattice. Two related theoretical techniques are used in this evaluation: One is based upon a recently developed bifurcation analysis; the other is based upon the theory of freezing developed by Ramakrishnan and Yussouff. For liquid sodium, where experimental information is available, the predictions of the two theories agree well with experiment and each other. The adhesive-hard-sphere system, which displays a triple point and can be used to fit some liquids accurately, shows a temperature dependence of the freezing parameters which is similar to Lennard-Jones systems. At very low temperature, the fractional density change on freezing shows a dramatic increase as a function of temperature indicating the importance of all the contributions due to the triplet direction correlation function. Also, we consider the freezing of a one-component liquid into a simple-cubic (sc) lattice by bifurcation analysis and show that this transition is highly unfavorable, independent of interatomic potential choice. The bifurcation diagrams for the three lattices considered are compared and found to be strikingly different. Finally, a new stability analysis of the bifurcation diagrams is presented.

Pressure induced effects in bulk amorphous n-type semiconductors(GeSe3.5)100âxBix

The effect of pressure on the electrical resistivity of amorphous n-type (GeSe3.5)100�xBix been studied in a Bridgeman anvil system up to a pressure of 90 kbar down to liquid nitrogen temperature. A continuous amorphous semiconductor to metal-like solid transition in the undoped GeSe3.5 is observed at room temperature. Incorporation of Bi in the GeSe3.5 network is found to significantly disturb the behaviour of the resistivity with pressure. With increasing Bi concentration a much broader variation in resistivity with pressure is observed. The temperature dependence of the resistivity and activation energy at different pressures is also measured and they are found to be composition dependent. Results are discussed in the light of the Phillips Model of ordered clusters in chalcogenide semiconductors.

Quasi-2D XY Magnetic Properties and Slow Relaxation in a Body Centered Metal Organic Network of [Co-4] Clusters

Octahedral Co2+ centers have been connected by mu(3)-OH and mu(2)-OH2 units forming [Co-4] clusters which are linked by pyrazine forming a two-dimensional network. The two-dimensional layers are bridged by oxybisbenzoate (OBA) ligands giving rise to a three-dimensional structure. The [Co-4] clusters bond with the pyrazine and the OBA results in a body-centered arrangement of the clusters, which has been observed for the first time. Magnetic studies reveal a noncollinear frustrated spin structure of the bitriangular cluster, resulting in a net magnetic moment of 1.4 mu B per cluster. For T > 32 K, the correlation length of the cluster moments shows a stretched-exponential temperature dependence typical of a Berezinskii-Kosterlitz-Thouless model, which points to a quasi-2D XY behavior. At lower temperature and down to 14 K, the compound behaves as a soft ferromagnet and a slow relaxation is observed, with an energy barrier of ca. 500 K. Then, on further cooling, a hysteretic behavior takes place with a coercive field that reaches 5 Tat 4 K. The slow relaxation is assigned to the creation/annihilation of vortex-antivortex pairs, which are the elementary excitations of a 2D XY spin system.

Proton magnetic relaxation in (TMA)2HgBr4 and (TMA)2HgI4

Internal motions of the protonic groups have been studied in polycrystalline [(CH3)4N]2HgBr4 and [(CH3)4N]2HgI4 from the temperature dependence of proton spin relaxation time (T 1) and the data analysed according to the spin lattice relaxation model due to Albert and coworkers. The temperature dependence ofT 1 in the above compounds is compared with that in (TMA)2HgCl4 and (TMA)2ZnCl4.