Getting high-efficiency photoluminescence from Si nanocrystals in SiO2 matrix

Silicon nanocrystals in SiO2 matrix are fabricated by plasma enhanced chemical vapor deposition followed by thermal annealing. The structure and photoluminescence (PL) of the resulting films is investigated as a function of deposition temperature. Drastic improvement of PL efficiency up to 12% is achieved when the deposition temperature is reduced from 250 degreesC to room temperature. Low-temperature deposition is found to result in a high quality final structure of the films in which the silicon nanocrystals are nearly strain-free, and the Si/SiO2 interface sharp. The demonstration of the superior structural and optical properties of the films represents an important step towards the development of silicon-based light emitters. (C) 2002 American Institute of Physics.

Thick SiO2 layer produced by anodisation

A method for oxidising porous silicon to obtain thick SiO2 as the cladding layer of silicon-based silica waveguides is presented. The experimental results of oxidation are given. The following conclusions are drawn: the oxidation rate of porous silicon is several orders higher than that of bulk silicon, the appropriate temperature variation rate during oxidation combined with proper porosity can prevent SiO2 on silicon substrates from cracking. and a 25 mu M thick silicon dioxide layer has been obtained.

Raman scattering of nanocrystalline silicon embedded in SiO2

Raman scattering of nanocrystalline silicon embedded in SiO2 matrix is systematically investigated. It is found that the Raman spectra can be well fitted by 5 Lorentzian lines in the Raman shift range of 100-600 cm(-1). The two-phonon scattering is also observed in the range of 600-1100 cm(-1) The experimental results indicate that the silicon crystallites in the films consist of nanocrystalline phase and amorphous phase; both can contribute to the Raman scattering. Besides the red-shift of the first order optical phonon modes with the decreasing size of silicon nanocrystallites, we have also found an enhancement effect on the second order Raman scattering, and the size effect on their Raman shift.

Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix

Nanocrystalline silicon (nc-Si) embedded SiO2 matrix has been formed by annealing the SiOx films fabricated by plasma-enhanced chemical vapor deposition (PECVD) technique. Absorption coefficient and photoluminescence of the films have been measured at room temperature. The experimental results show that there is an "aUrbach-like" b exponential absorption in the spectral range of 2.0-3.0 eV. The relationship of (alpha hv)(1/2) proportional to(hv - E-g) demonstrates that the luminescent nc-Si have an indirect band structure. The existence of Stokes shift between photoluminescence and absorption edge indicates that radiative combination can take place not only between electron states and hole states but also between shallow trap states of electrons and holes. (C) 2000 Elsevier Science B.V. All rights reserved.

Optical properties of nanocrystalline silicon embedded in SiO2

Nanocrystalline silicon embedded SiO2 matrix has been formed by annealing the a-SiOx films fabricated by plasma enhanced chemical vapor deposition technique. Absorption and photoluminescence spectra of, the films have been studied in conjunction with micro-Raman scattering spectra. It is found that absorption presents an exponential dependence of absorption coefficient to photon energy in the range of 1.5-3.0 eV, and a sub-band appears in the range of 1.0-1.5 eV. The exponential absorption is due to the indirect band-to-band transition of electrons in silicon nanocrystallites, while the sub-band absorption is ascribed to transitions between surfaces and/or defect states of the silicon nanocrystallites. The existence of Stokes shift between absorption and photoluminescence suggests that the phonon-assisted luminescence would he enhanced due to the quantum confinement effects.

Photoluminescence from Ge clusters embedded in porous silicon

Visible photoluminescence (PL) and Raman spectra of Ge clusters embedded in porous silicon (PS) have been studied. The as-prepared sample shows redshifted and enhanced room temperature PL relative to reference PS. This result can be explained by the quantum confinement effect on excitons in Ge clusters and tunnel of excitons from Si units of the PS skeleton to Ge clusters. One year storage in dry air results in a pronounced decrease in PL intensity but blue-shifted in contrast to reference PS. This phenomenon correlates to the size decrease of macerated Ce clusters and occurrence of "quantum depletion" in Ge clusters. Consequently, only excitons in Si units contribute to PL. (C) 1998 American Institute of Physics.

Photoluminescence mechanism of Si nanocrystals embedded in SiO2 matrix

The interface state recombination effect from the quantum confinement effect in PL signals from the SRO material system was studied. The results show that the larger the size of Si NCs, the more beneficial for the interface state recombination process to surpass the quantum confinement process, in support of Qin's model.

The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S

Oxidizing thick porous silicon layer into silicon dioxide is a timesaving and low-cost process for producing thick silicon dioxide layer used in silicon-based optical waveguide devices. The solution of H2O2 is proposed to post-treat thick porous silicon (PS) films. The prepared PS layer as the cathode is applied about 10 mA/cm(2) current in mixture of ethanol, HF, and H2O2 solutions, in order to improve the stability and the smoothness of the surface. With the low-temperature dry-O-2 pre-oxidizations and high-temperature wet O-2 oxidizations process, a high-quality SiO2 30 mu m thickness layer that fit for the optical waveguide device was prepared. The SEM images show significant improved smoothness on the surface of oxidized PS thick films, the SiO2 film has a stable and uniformity reflex index that measured by the prism coupler, the uniformity of the reflex index in different place of the wafer is about 0.0003.

Na-23, Si-29, and C-13 MAS NMR investigation of glass-forming reactions between Na2CO3 and SiO2

Winter, Rudolf; Jones, A.R.; Greaves, G.N.; Smith, I.H., (2005) 'Na-23, Si-29, and C-13 MAS NMR investigation of glass-forming reactions between Na2CO3 and SiO2', Journal of Physical Chemistry B 109(49) pp.23154-23161 RAE2008

Dissolution-Precipitation in Porous Media: Experiments and Modelling

The evolution of porosity due to dissolution/precipitation processes of minerals and the associated change of transport parameters are of major interest for natural geological environments and engineered underground structures. We designed a reproducible and fast to conduct 2D experiment, which is flexible enough to investigate several process couplings implemented in the numerical code OpenGeosys-GEM (OGS-GEM). We investigated advective-diffusive transport of solutes, effect of liquid phase density on advective transport, and kinetically controlled dissolution/precipitation reactions causing porosity changes. In addition, the system allowed to investigate the influence of microscopic (pore scale) processes on macroscopic (continuum scale) transport. A Plexiglas tank of dimension 10 × 10 cm was filled with a 1 cm thick reactive layer consisting of a bimodal grain size distribution of celestite (SrSO4) crystals, sandwiched between two layers of sand. A barium chloride solution was injected into the tank causing an asymmetric flow field to develop. As the barium chloride reached the celestite region, dissolution of celestite was initiated and barite precipitated. Due to the higher molar volume of barite, its precipitation caused a porosity decrease and thus also a decrease in the permeability of the porous medium. The change of flow in space and time was observed via injection of conservative tracers and analysis of effluents. In addition, an extensive post-mortem analysis of the reacted medium was conducted. We could successfully model the flow (with and without fluid density effects) and the transport of conservative tracers with a (continuum scale) reactive transport model. The prediction of the reactive experiments initially failed. Only the inclusion of information from post-mortem analysis gave a satisfactory match for the case where the flow field changed due to dissolution/precipitation reactions. We concentrated on the refinement of post-mortem analysis and the investigation of the dissolution/precipitation mechanisms at the pore scale. Our analytical techniques combined scanning electron microscopy (SEM) and synchrotron X-ray micro-diffraction/micro-fluorescence performed at the XAS beamline (Swiss Light Source). The newly formed phases include an epitaxial growth of barite micro-crystals on large celestite crystals (epitaxial growth) and a nano-crystalline barite phase (resulting from the dissolution of small celestite crystals) with residues of celestite crystals in the pore interstices. Classical nucleation theory, using well-established and estimated parameters describing barite precipitation, was applied to explain the mineralogical changes occurring in our system. Our pore scale investigation showed limits of the continuum scale reactive transport model. Although kinetic effects were implemented by fixing two distinct rates for the dissolution of large and small celestite crystals, instantaneous precipitation of barite was assumed as soon as oversaturation occurred. Precipitation kinetics, passivation of large celestite crystals and metastability of supersaturated solutions, i.e. the conditions under which nucleation cannot occur despite high supersaturation, were neglected. These results will be used to develop a pore scale model that describes precipitation and dissolution of crystals at the pore scale for various transport and chemical conditions. Pore scale modelling can be used to parameterize constitutive equations to introduce pore-scale corrections into macroscopic (continuum) reactive transport models. Microscopic understanding of the system is fundamental for modelling from the pore to the continuum scale.

Ta2O5/SiO2 insulating acoustic mirrors for AlN-based X-band BAW resonators

This work describes the performance of AlN-based bulk acoustic wave resonators built on top of insulating acoustic reflectors and operating at around 8 GHz. The acoustic reflectors are composed of alternate layers of amorphous Ta2O5and SiO2 deposited at room temperature by pulsed-DC reactive sputtering in Ar/O2 atmospheres. SiO2 layers have a porous structure that provides a low acoustic impedance of only 9.5 MRayl. Ta2O5 films exhibit an acoustic impedance of around 39.5 MRayl that was assessed by the picoseconds acoustic technique These values allow to design acoustic mirrors with transmission coefficients in the centre of the band lower than -40 dB (99.998 % of reflectance) with only seven layers. The resonators were fabricated by depositing a very thin AlN film onto an iridium bottom electrode 180 nm-thick and by using Ir or Mo layers as top electrode. Resonators with effective electromechanical coupling factors of 5.7% and quality factors at the antiresonant frequency around 600 are achieved.

Electrocatalytic Performance of SiO2-SWCNT Nanocomposites Prepared by Electroassisted Deposition

Composite materials made of porous SiO2 matrices filled with single-walled carbon nanotubes (SWCNTs) were deposited on electrodes by an electroassisted deposition method. The synthesized materials were characterized by several techniques, showing that porous silica prevents the aggregation of SWCNT on the electrodes, as could be observed by transmission electron microscopy and Raman spectroscopy. Different redox probes were employed to test their electrochemical sensing properties. The silica layer allows the permeation of the redox probes to the electrode surface and improves the electrochemical reversibility indicating an electrocatalytic effect by the incorporation of dispersed SWCNT into the silica films.

Thermodynamic calculations for the salt crystallisation damage in porous built heritage using PHREEQC

This work considers the crystallisation mechanisms of the most common and aggressive salts that generate stress in porous building stones as a result of changing ambient conditions. These mechanisms include the salt crystallisation that result from decreasing relative humidity and changes in temperature and, in hydrated salts, the dissolution of the lower hydrated form and the subsequent precipitation of the hydrated salt. We propose a new methodology for thermodynamic calculations using PHREEQC that includes these crystallisation mechanisms. This approach permits the calculation of the equilibrium relative humidity and the parameterization of the critical relative humidity and crystallisation pressures for the dissolution–precipitation transitions. The influence of other salts on the effectives of salt crystallisation and chemical weathering is also assessed. We review the sodium and magnesium sulphate and sodium chloride systems, in both single and multicomponent solutions, and they are compared to the sodium carbonate and calcium carbonate systems. The variation of crystallisation pressure, the formation of new minerals and the chemical dissolution by the presence of other salts is also evaluated. Results for hydrated salt systems show that high crystallisation pressures are possible as lower hydrated salts dissolve and more hydrated salts precipitate. High stresses may be also produced by decreasing temperature, although it requires that porous materials are wet for long periods of time. The presence of other salts changes the temperature and relative humidity of salt transitions that generates stress rather than reducing the pressure of crystallisation, if any salt has previously precipitated. Several practical conclusions derive from proposed methodology and provide conservators and architects with information on the potential weathering activity of soluble salts. Furthermore, the model calculations might be coupled with projections of future climate to give as improved understanding of the likely changes in the frequency of phase transitions in salts within porous stone.