Photoluminescence from Ge clusters embedded in porous silicon


Autoria(s): Liu FQ; Wang ZG; Li GH; Wang GH
Data(s)

1998

Resumo

Visible photoluminescence (PL) and Raman spectra of Ge clusters embedded in porous silicon (PS) have been studied. The as-prepared sample shows redshifted and enhanced room temperature PL relative to reference PS. This result can be explained by the quantum confinement effect on excitons in Ge clusters and tunnel of excitons from Si units of the PS skeleton to Ge clusters. One year storage in dry air results in a pronounced decrease in PL intensity but blue-shifted in contrast to reference PS. This phenomenon correlates to the size decrease of macerated Ce clusters and occurrence of "quantum depletion" in Ge clusters. Consequently, only excitons in Si units contribute to PL. (C) 1998 American Institute of Physics.

Identificador

http://ir.semi.ac.cn/handle/172111/13252

http://www.irgrid.ac.cn/handle/1471x/65596

Idioma(s)

英语

Fonte

Liu FQ; Wang ZG; Li GH; Wang GH .Photoluminescence from Ge clusters embedded in porous silicon ,JOURNAL OF APPLIED PHYSICS,1998,83(6):3435-3437

Palavras-Chave #半导体物理 #VISIBLE PHOTOLUMINESCENCE #QUANTUM DOTS #SIO2 MATRIX
Tipo

期刊论文