Photoluminescence mechanism of Si nanocrystals embedded in SiO2 matrix
| Data(s) |
2006
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|---|---|
| Resumo |
The interface state recombination effect from the quantum confinement effect in PL signals from the SRO material system was studied. The results show that the larger the size of Si NCs, the more beneficial for the interface state recombination process to surpass the quantum confinement process, in support of Qin's model. The interface state recombination effect from the quantum confinement effect in PL signals from the SRO material system was studied. The results show that the larger the size of Si NCs, the more beneficial for the interface state recombination process to surpass the quantum confinement process, in support of Qin's model. zhangdi于2010-03-29批量导入 zhangdi于2010-03-29批量导入 IEEE. Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China IEEE. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Fonte |
Wang, XX (Wang, Xiaoxin); Cheng, BW (Cheng, Buwen); Yu, JZ (Yu, Jinzhong); Wang, QM (Wang, Qiming) .Photoluminescence mechanism of Si nanocrystals embedded in SiO2 matrix .见：IEEE .2006 3rd IEEE International Conference on Group IV Photonics,345 E 47TH ST, NEW YORK, NY 10017 USA ,2006,158-160 |
| Palavras-Chave | #光电子学 #POROUS SILICON |
| Tipo |
会议论文 |
