The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S

Oxidizing thick porous silicon layer into silicon dioxide is a timesaving and low-cost process for producing thick silicon dioxide layer used in silicon-based optical waveguide devices. The solution of H2O2 is proposed to post-treat thick porous silicon (PS) films. The prepared PS layer as the cathode is applied about 10 mA/cm(2) current in mixture of ethanol, HF, and H2O2 solutions, in order to improve the stability and the smoothness of the surface. With the low-temperature dry-O-2 pre-oxidizations and high-temperature wet O-2 oxidizations process, a high-quality SiO2 30 mu m thickness layer that fit for the optical waveguide device was prepared. The SEM images show significant improved smoothness on the surface of oxidized PS thick films, the SiO2 film has a stable and uniformity reflex index that measured by the prism coupler, the uniformity of the reflex index in different place of the wafer is about 0.0003.

Oxidizing thick porous silicon layer into silicon dioxide is a timesaving and low-cost process for producing thick silicon dioxide layer used in silicon-based optical waveguide devices. The solution of H2O2 is proposed to post-treat thick porous silicon (PS) films. The prepared PS layer as the cathode is applied about 10 mA/cm(2) current in mixture of ethanol, HF, and H2O2 solutions, in order to improve the stability and the smoothness of the surface. With the low-temperature dry-O-2 pre-oxidizations and high-temperature wet O-2 oxidizations process, a high-quality SiO2 30 mu m thickness layer that fit for the optical waveguide device was prepared. The SEM images show significant improved smoothness on the surface of oxidized PS thick films, the SiO2 film has a stable and uniformity reflex index that measured by the prism coupler, the uniformity of the reflex index in different place of the wafer is about 0.0003.

zhangdi于2010-03-29批量导入

zhangdi于2010-03-29批量导入

Int Commiss Opt.; Chinese Opt Soc.; Changchun Inst Opt, Fine Mech & Phys, CAS.; AFOSR Asia Off.; Chinese Acad Engn.; Chinese Acad Sci & Technol.; European Opt Soc.; IEEE LEOS.; Natl Nat Sci Fdn China.; Opt Soc Japan.; Opt Soc Korea.; Opt Soc Russia, Siberian.; Opt Soc Amer.; SPIE.

Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

Int Commiss Opt.; Chinese Opt Soc.; Changchun Inst Opt, Fine Mech & Phys, CAS.; AFOSR Asia Off.; Chinese Acad Engn.; Chinese Acad Sci & Technol.; European Opt Soc.; IEEE LEOS.; Natl Nat Sci Fdn China.; Opt Soc Japan.; Opt Soc Korea.; Opt Soc Russia, Siberian.; Opt Soc Amer.; SPIE.