Fabrication of Yy‐Pr1‐y ‐Ba‐Cu‐O Thin Films and Superlattices of ‐Ba‐Cu‐O/Yy‐Pr1‐y ‐Ba‐Cu‐O

We have prepared epitaxial thin films of Yy‐Pr1‐y‐Ba‐Cu‐O (y= 1 to 0) and superlattices of Y‐Ba‐Cu‐O/Yy‐Pr1‐y ‐Ba‐Cu‐O using pulsed laser deposition technique. The zero resistance transition temperatures of Yy‐Pr1‐y‐Ba‐Cu‐O bulk samples are reproduced in the films. The composition oscillations in the superlattices are observed by SIMS. The films and superlattices are found to have c‐axis orientations and good crystallinity.

The effect of electrochemical lithiation on physicochemical properties of RF-sputtered Sn thin films

Thin films of Sn were deposited on Pt/Si substrates by sputtering technique and subjected to electrochemical lithiation studies. Electrochemical lithiation of Sn resulted in the formation of Sn-Li alloys of different compositions. Charging of Sn-coated Pt/Si electrodes was terminated at different potentials and the electrodes were examined for physicochemical properties. The scanning electron microscopy and atomic force microscopy images suggested that the Sn films expanded on lithiation. Roughness of the film increased with an increase in the quantity of Li present in Sn-Li alloy. Electrochemical impedance data suggested that the kinetics of charging became sluggish with an increase in the quantity of Li in Sn-Li alloy.

Morphology and electrochemical performance of graphene nanosheet array for Li-ion thin film battery

Highly branched and porous graphene nanosheet synthesized over different substrates as anode for Lithium ion thin film battery. These films synthesized by microwave plasma enhanced chemical vapor deposition at temperature 700 degrees C. Scanning electron microscopy and X-ray photo electron spectroscopy are used to characterize the film surface. It is found that the graphene sheets possess a curled and flower like morphology. Electrochemical performances were evaluated in swezelock type cells versus metallic lithium. A reversible capacity of 520 mAh/g, 450 mAh/g and 637 mAh/g was obtained after 50 cycles when current rate at 23 mu A cm(2) for CuGNS, NiGNS and PtGNS electrodes, respectively. Electrochemical properties of thin film anode were measured at different current rate and gave better cycle life and rate capability. These results indicate that the prepared high quality graphene sheets possess excellent electrochemical performances for lithium storage. (C) 2013 Elsevier Ltd. All rights reserved.

Effect of radio frequency power and thickness on the electrochemical properties of Li2-x MnO3-y thin films

In the present work, Li2-x MnO3-y (LMO) thin films have been deposited by radio frequency (RF) reactive magnetron sputtering using acid-treated Li2MnO3 powder target. Systematic investigations have been carried out to study the effect of RF power on the physicochemical properties of LMO thin films deposited on platinized silicon substrates. X-ray diffraction, electron microscopy, surface chemical analysis and electrochemical studies were carried out for the LMO films after post deposition annealing treatment at 500 A degrees C for 1 h in air ambience. Galvanostatic charge discharge studies carried out using the LMO thin film electrodes, delivered a highest discharge capacity of 139 mu Ah mu m(-1) cm(-2) in the potential window 2.0-3.5 V vs. Li/Li+ at 100 W RF power and lowest discharge capacity of 80 mu Ah mu m(-1) cm(-2) at 75 W RF power. Thereafter, the physicochemical properties of LMO films deposited using optimized RF power 100 W on stainless steel substrates has been studied in the thickness range of 70 to 300 nm as a case study. From the galvanostatic charge discharge experiments, a stable discharge capacity of 68 mu Ah mu m(-1) cm(-2) was achieved in the potential window 2.0-4.2 V vs. Li/Li+ tested up to 30 cycles. As the thickness increased, the specific discharge capacity started reducing with higher magnitude of capacity fading.

Fabrication and bio-functionalization of tetrahedral amorphous carbon thin films for bio sensor applications

Tetrahedral amorphous carbon (ta-C) thin films are a promising material for use as biocompatible interfaces in applications such as in-vivo biosensors. However, the functionalization of ta-C film surface, which is a pre-requisite for biosensors, remains a big challenge due to its chemical inertness. We have investigated the bio-functionalization of ta-C films fabricated under specific physical conditions through the covalent attachment of functional biomolecular probes of peptide nucleic acid (PNA) to ta-C films, and the effect of fabrication conditions on the bio-functionalization. The study showed that the functional bimolecular probes such as protected long-chain ω-unsaturated amine (TFAAD) can be covalently attached to the ta-C surface through a well-defined structure. With the given fabrication process, electrochemical methods can be applied to the detection of biomolecular interaction, which establishes the basis for the development of stable, label-free biosensors. © 2011 Elsevier B.V. All rights reserved.

Ultrafast dynamics in ZnO thin films irradiated by femtosecond lasers

The damage morphologies, threshold fluences in ZnO films were studied with femtosecond laser pulses. Time-resolved reflectivity and transmissivity have been measured by the pump-probe technique at different pump fluences and wavelengths. The results indicate that two-phase transition is the dominant damage mechanism, which is similar to that in narrow band gap semiconductors. The estimated energy loss rate of conduction electrons is 1.5 eV/ps. (c) 2005 Elsevier Ltd. All rights reserved.

Preparation, characterization and gas sensing properties of high soluble metal (II) phthalocyanine thin films by spin-coating method

Three novel metal (II) phthalocyanine complexes were synthesized by cyclic tetramerisation reaction of a dicyano benzene component and different metal ions (Pd2+, Co2+, Zn2+). The structure of complexes was confirmed by elemental analysis, mass and IR spectrum. The excellent solubility of the complexes in benzene enabled us to obtain films by a spin-coating method. The films were characterized by IR, electronic spectral and AFM. The gas sensing properties to NO2 of the metal (II) phthalocyanine complex films were studied. In addition, the effects of different metal ions and the gas sensing temperature on the sensing properties were studied. (C) 2005 Elsevier B.V. All rights reserved.

Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation

We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge1Sb4Te7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (CAFM). This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude.

Epitaxial growth of ZnO thin films on LiGaO2 substrates by pulsed-laser deposition

Lattice-matched (Delta(a/a) = 1.8-3.4%) (001) LiGaO2 substrates have been employed for the first time to grow ZnO thin films by pulsed-laser deposition at 350-650 degrees C with oxygen partial pressure of 20Pa. XRD shows that a highly c-axis-oriented ZnO film can be deposited on (001) LiGaO2 substrate at 500 degrees C. AFM images reveal the surfaces of as-deposited ZnO films are smooth and root-mean-square values are 6.662, 5.765 and 6.834 nm at 350, 500 and 650 degrees C, respectively. PL spectra indicate only near-band-edge UV emission appears in the curve of ZnO film deposited at 500 degrees C. The deep-level emission of ZnO film deposited at 650 degrees C probably results from Li diffusion into the film. All the results illustrate substrate temperature plays a pretty important role in obtaining ZnO film with a high quality on LiGaO2 substrate by pulsed-laser deposition. (c) 2006 Elsevier B.V. All rights reserved.

Structural, morphological and optical properties of ZnO thin films grown on gamma-LiAlO2 substrate by pulsed laser deposition

ZnO thin films were deposited on the substrates of (100) gamma-LiAlO2 at 400, 550 and 700 degrees C using pulsed laser deposition (PLD) with the fixed oxygen pressure of 20 Pa, respectively. When the substrate temperature is 400 degrees C, the grain size of the film is less than 1 mu m observed by Leitz microscope and measured by X-ray diffraction (XRD). As the substrate temperature increases to 550 degrees C, highly-preferred c-orientation and high-quality ZnO film can be attained. While the substrate temperature rises to 700 degrees C, more defects appears on the surface of film and the ZnO films become polycrystalline again possibly because more Li of the substrate diffused into the ZnO film at high substrate temperature. The photoluminescence (PL) spectra of ZnO films at room temperature show the blue emission peaks centered at 430 nm. We suggest that the blue emission corresponds to the electron transition from the level of interstitial Zn to the valence band. Meanwhile, the films grown on gamma-LiAlO2 (LAO) exhibit green emission centered at 540 nm, which seemed to be ascribed to excess zinc and/or oxygen vacancy in the ZnO films caused by diffusion of Li. from the substrates into the films during the deposition.

Deposition of ZnO thin films on (100) γ-LiAlO2 substrate

Optical properties for ZnO thin films grown on (100) γ-LiAlO2 (LAO) substrate by pulsed laser deposition method were investigated. The c-axis oriented ZnO films were grown on (100) γ-LiAlO2 substrates at the substrate temperature of 550 Celsius degrees. The transmittance of the films was over 85%. Peaks attributed to excitons were shown in absorption spectra, which indicated that thin films had high crystallinity. Photoluminescence spectra with the maximum peak at 540 nm were observed at room temperature, which seemed to be ascribed to oxygen vacancy in the ZnO films caused by diffusion of Li from the substrates into the films during the deposition.

Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.

Dry-transfer of aligned multiwalled carbon nanotubes for flexible transparent thin films

Herein we present an inexpensive facile wet-chemistry-free approach to the transfer of chemical vapour-deposited multiwalled carbon nanotubes to flexible transparent polymer substrates in a single-step process. By controlling the nanotube length, we demonstrate accurate control over the electrical conductivity and optical transparency of the transferred thin films. Uniaxial strains of up to 140% induced only minor reductions in sample conductivity, opening up a number of applications in stretchable electronics. Nanotube alignment offers enhanced functionality for applications such as polarisation selective electrodes and flexible supercapacitor substrates. A capacitance of 17F/g was determined for supercapacitors fabricated from the reported dry-transferred MWCNTs with the corresponding cyclic voltagrams showing a clear dependence on nanotube length. © 2012 Matthew Cole et al.

Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane

This paper reports the mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates. Using bulge testing combined with a refined load-deflection model of long rectangular membranes, which takes into account the bending stiffness and prestress of the membrane material, the Young's modulus, prestress, and fracture strength for the 3C-SiC thin films with thicknesses of 0.40 and 1.42 mu m were extracted. The stress distribution in the membranes under a load was calculated analytically. The prestresses for the two films were 322 +/- 47 and 201 +/- 34 MPa, respectively. The thinner 3C-SiC film with a strong (111) orientation has a plane-gstrain moduli of 415 +/- 61 GPa, whereas the thicker film with a mixture of both (111) and (110) orientations exhibited a plane-strain moduli of 329 +/- 49 GPa. The corresponding fracture strengths for the two kinds of SiC films were 6.49 +/- 0.88 and 3.16 +/- 0.38 GPa, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over edge, surface, and volume of the specimens and were fitted with Weibull distribution function. For the 0.40-mu m-thick membranes, the surface integration has a better agreement between the data and the model, implying that the surface flaws are the dominant fracture origin. For the 1.42-mu m-thick membranes, the surface integration presented only a slightly better fitting quality than the other two, and therefore, it is difficult to rule out unambiguously the effects of the volume and edge flaws.