A current-mode interface circuit for a piezoresistive pressure sensor

An interfacing circuit for piezoresistive pressure sensors based on CMOS current conveyors is presented. The main advantages of the proposed interfacing circuit include the use of a single piezoresistor, the capability of offset compensation, and a versatile current-mode configuration, with current output and current or voltage input. Experimental tests confirm linear relation of output voltage versus piezoresistance variation.

Design of boundary-scan testing in CMOS image sensors for industrial applications: internship repor

Tests on printed circuit boards and integrated circuits are widely used in industry,resulting in reduced design time and cost of a project. The functional and connectivity tests in this type of circuits soon began to be a concern for the manufacturers, leading to research for solutions that would allow a reliable, quick, cheap and universal solution. Initially, using test schemes were based on a set of needles that was connected to inputs and outputs of the integrated circuit board (bed-of-nails), to which signals were applied, in order to verify whether the circuit was according to the specifications and could be assembled in the production line. With the development of projects, circuit miniaturization, improvement of the production processes, improvement of the materials used, as well as the increase in the number of circuits, it was necessary to search for another solution. Thus Boundary-Scan Testing was developed which operates on the border of integrated circuits and allows testing the connectivity of the input and the output ports of a circuit. The Boundary-Scan Testing method was converted into a standard, in 1990, by the IEEE organization, being known as the IEEE 1149.1 Standard. Since then a large number of manufacturers have adopted this standard in their products. This master thesis has, as main objective: the design of Boundary-Scan Testing in an image sensor in CMOS technology, analyzing the standard requirements, the process used in the prototype production, developing the design and layout of Boundary-Scan and analyzing obtained results after production. Chapter 1 presents briefly the evolution of testing procedures used in industry, developments and applications of image sensors and the motivation for the use of architecture Boundary-Scan Testing. Chapter 2 explores the fundamentals of Boundary-Scan Testing and image sensors, starting with the Boundary-Scan architecture defined in the Standard, where functional blocks are analyzed. This understanding is necessary to implement the design on an image sensor. It also explains the architecture of image sensors currently used, focusing on sensors with a large number of inputs and outputs.Chapter 3 describes the design of the Boundary-Scan implemented and starts to analyse the design and functions of the prototype, the used software, the designs and simulations of the functional blocks of the Boundary-Scan implemented. Chapter 4 presents the layout process used based on the design developed on chapter 3, describing the software used for this purpose, the planning of the layout location (floorplan) and its dimensions, the layout of individual blocks, checks in terms of layout rules, the comparison with the final design and finally the simulation. Chapter 5 describes how the functional tests were performed to verify the design compliancy with the specifications of Standard IEEE 1149.1. These tests were focused on the application of signals to input and output ports of the produced prototype. Chapter 6 presents the conclusions that were taken throughout the execution of the work.

Methodology analysis of a computational tool used in electronic circuit design

This paper considers the importance of using a top-down methodology and suitable CAD tools in the development of electronic circuits. The paper presents an evaluation of the methodology used in a computational tool created to support the synthesis of digital to analog converter models by translating between different tools used in a wide variety of applications. This tool is named MS 2SV and works directly with the following two commercial tools: MATLAB/Simulink and SystemVision. Model translation of an electronic circuit is achieved by translating a mixed-signal block diagram developed in Simulink into a lower level of abstraction in VHDL-AMS and the simulation project support structure in SystemVision. The method validation was performed by analyzing the power spectral of the signal obtained by the discrete Fourier transform of a digital to analog converter simulation model. © 2011 IEEE.

Feasible Dose Reduction in Routine Chest Computed Tomography Maintaining Constant Image Quality Using the Last Three Scanner Generations: From Filtered Back Projection to Sinogram-affirmed Iterative Reconstruction and Impact of the Novel Fully Integrated Detector Design Minimizing Electronic Noise

OBJECTIVE The aim of the present study was to evaluate a dose reduction in contrast-enhanced chest computed tomography (CT) by comparing the three latest generations of Siemens CT scanners used in clinical practice. We analyzed the amount of radiation used with filtered back projection (FBP) and an iterative reconstruction (IR) algorithm to yield the same image quality. Furthermore, the influence on the radiation dose of the most recent integrated circuit detector (ICD; Stellar detector, Siemens Healthcare, Erlangen, Germany) was investigated. MATERIALS AND METHODS 136 Patients were included. Scan parameters were set to a thorax routine: SOMATOM Sensation 64 (FBP), SOMATOM Definition Flash (IR), and SOMATOM Definition Edge (ICD and IR). Tube current was set constantly to the reference level of 100 mA automated tube current modulation using reference milliamperes. Care kV was used on the Flash and Edge scanner, while tube potential was individually selected between 100 and 140 kVp by the medical technologists at the SOMATOM Sensation. Quality assessment was performed on soft-tissue kernel reconstruction. Dose was represented by the dose length product. RESULTS Dose-length product (DLP) with FBP for the average chest CT was 308 mGy*cm ± 99.6. In contrast, the DLP for the chest CT with IR algorithm was 196.8 mGy*cm ± 68.8 (P = 0.0001). Further decline in dose can be noted with IR and the ICD: DLP: 166.4 mGy*cm ± 54.5 (P = 0.033). The dose reduction compared to FBP was 36.1% with IR and 45.6% with IR/ICD. Signal-to-noise ratio (SNR) was favorable in the aorta, bone, and soft tissue for IR/ICD in combination compared to FBP (the P values ranged from 0.003 to 0.048). Overall contrast-to-noise ratio (CNR) improved with declining DLP. CONCLUSION The most recent technical developments, namely IR in combination with integrated circuit detectors, can significantly lower radiation dose in chest CT examinations.

Design and Simulation of Deep Nanometer SRAM Cells under Energy, Mismatch, and Radiation Constraints

La fiabilidad está pasando a ser el principal problema de los circuitos integrados según la tecnología desciende por debajo de los 22nm. Pequeñas imperfecciones en la fabricación de los dispositivos dan lugar ahora a importantes diferencias aleatorias en sus características eléctricas, que han de ser tenidas en cuenta durante la fase de diseño. Los nuevos procesos y materiales requeridos para la fabricación de dispositivos de dimensiones tan reducidas están dando lugar a diferentes efectos que resultan finalmente en un incremento del consumo estático, o una mayor vulnerabilidad frente a radiación. Las memorias SRAM son ya la parte más vulnerable de un sistema electrónico, no solo por representar más de la mitad del área de los SoCs y microprocesadores actuales, sino también porque las variaciones de proceso les afectan de forma crítica, donde el fallo de una única célula afecta a la memoria entera. Esta tesis aborda los diferentes retos que presenta el diseño de memorias SRAM en las tecnologías más pequeñas. En un escenario de aumento de la variabilidad, se consideran problemas como el consumo de energía, el diseño teniendo en cuenta efectos de la tecnología a bajo nivel o el endurecimiento frente a radiación. En primer lugar, dado el aumento de la variabilidad de los dispositivos pertenecientes a los nodos tecnológicos más pequeños, así como a la aparición de nuevas fuentes de variabilidad por la inclusión de nuevos dispositivos y la reducción de sus dimensiones, la precisión del modelado de dicha variabilidad es crucial. Se propone en la tesis extender el método de inyectores, que modela la variabilidad a nivel de circuito, abstrayendo sus causas físicas, añadiendo dos nuevas fuentes para modelar la pendiente sub-umbral y el DIBL, de creciente importancia en la tecnología FinFET. Los dos nuevos inyectores propuestos incrementan la exactitud de figuras de mérito a diferentes niveles de abstracción del diseño electrónico: a nivel de transistor, de puerta y de circuito. El error cuadrático medio al simular métricas de estabilidad y prestaciones de células SRAM se reduce un mínimo de 1,5 veces y hasta un máximo de 7,5 a la vez que la estimación de la probabilidad de fallo se mejora en varios ordenes de magnitud. El diseño para bajo consumo es una de las principales aplicaciones actuales dada la creciente importancia de los dispositivos móviles dependientes de baterías. Es igualmente necesario debido a las importantes densidades de potencia en los sistemas actuales, con el fin de reducir su disipación térmica y sus consecuencias en cuanto al envejecimiento. El método tradicional de reducir la tensión de alimentación para reducir el consumo es problemático en el caso de las memorias SRAM dado el creciente impacto de la variabilidad a bajas tensiones. Se propone el diseño de una célula que usa valores negativos en la bit-line para reducir los fallos de escritura según se reduce la tensión de alimentación principal. A pesar de usar una segunda fuente de alimentación para la tensión negativa en la bit-line, el diseño propuesto consigue reducir el consumo hasta en un 20 % comparado con una célula convencional. Una nueva métrica, el hold trip point se ha propuesto para prevenir nuevos tipos de fallo debidos al uso de tensiones negativas, así como un método alternativo para estimar la velocidad de lectura, reduciendo el número de simulaciones necesarias. Según continúa la reducción del tamaño de los dispositivos electrónicos, se incluyen nuevos mecanismos que permiten facilitar el proceso de fabricación, o alcanzar las prestaciones requeridas para cada nueva generación tecnológica. Se puede citar como ejemplo el estrés compresivo o extensivo aplicado a los fins en tecnologías FinFET, que altera la movilidad de los transistores fabricados a partir de dichos fins. Los efectos de estos mecanismos dependen mucho del layout, la posición de unos transistores afecta a los transistores colindantes y pudiendo ser el efecto diferente en diferentes tipos de transistores. Se propone el uso de una célula SRAM complementaria que utiliza dispositivos pMOS en los transistores de paso, así reduciendo la longitud de los fins de los transistores nMOS y alargando los de los pMOS, extendiéndolos a las células vecinas y hasta los límites de la matriz de células. Considerando los efectos del STI y estresores de SiGe, el diseño propuesto mejora los dos tipos de transistores, mejorando las prestaciones de la célula SRAM complementaria en más de un 10% para una misma probabilidad de fallo y un mismo consumo estático, sin que se requiera aumentar el área. Finalmente, la radiación ha sido un problema recurrente en la electrónica para aplicaciones espaciales, pero la reducción de las corrientes y tensiones de los dispositivos actuales los está volviendo vulnerables al ruido generado por radiación, incluso a nivel de suelo. Pese a que tecnologías como SOI o FinFET reducen la cantidad de energía colectada por el circuito durante el impacto de una partícula, las importantes variaciones de proceso en los nodos más pequeños va a afectar su inmunidad frente a la radiación. Se demuestra que los errores inducidos por radiación pueden aumentar hasta en un 40 % en el nodo de 7nm cuando se consideran las variaciones de proceso, comparado con el caso nominal. Este incremento es de una magnitud mayor que la mejora obtenida mediante el diseño de células de memoria específicamente endurecidas frente a radiación, sugiriendo que la reducción de la variabilidad representaría una mayor mejora. ABSTRACT Reliability is becoming the main concern on integrated circuit as the technology goes beyond 22nm. Small imperfections in the device manufacturing result now in important random differences of the devices at electrical level which must be dealt with during the design. New processes and materials, required to allow the fabrication of the extremely short devices, are making new effects appear resulting ultimately on increased static power consumption, or higher vulnerability to radiation SRAMs have become the most vulnerable part of electronic systems, not only they account for more than half of the chip area of nowadays SoCs and microprocessors, but they are critical as soon as different variation sources are regarded, with failures in a single cell making the whole memory fail. This thesis addresses the different challenges that SRAM design has in the smallest technologies. In a common scenario of increasing variability, issues like energy consumption, design aware of the technology and radiation hardening are considered. First, given the increasing magnitude of device variability in the smallest nodes, as well as new sources of variability appearing as a consequence of new devices and shortened lengths, an accurate modeling of the variability is crucial. We propose to extend the injectors method that models variability at circuit level, abstracting its physical sources, to better model sub-threshold slope and drain induced barrier lowering that are gaining importance in FinFET technology. The two new proposed injectors bring an increased accuracy of figures of merit at different abstraction levels of electronic design, at transistor, gate and circuit levels. The mean square error estimating performance and stability metrics of SRAM cells is reduced by at least 1.5 and up to 7.5 while the yield estimation is improved by orders of magnitude. Low power design is a major constraint given the high-growing market of mobile devices that run on battery. It is also relevant because of the increased power densities of nowadays systems, in order to reduce the thermal dissipation and its impact on aging. The traditional approach of reducing the voltage to lower the energy consumption if challenging in the case of SRAMs given the increased impact of process variations at low voltage supplies. We propose a cell design that makes use of negative bit-line write-assist to overcome write failures as the main supply voltage is lowered. Despite using a second power source for the negative bit-line, the design achieves an energy reduction up to 20% compared to a conventional cell. A new metric, the hold trip point has been introduced to deal with new sources of failures to cells using a negative bit-line voltage, as well as an alternative method to estimate cell speed, requiring less simulations. With the continuous reduction of device sizes, new mechanisms need to be included to ease the fabrication process and to meet the performance targets of the successive nodes. As example we can consider the compressive or tensile strains included in FinFET technology, that alter the mobility of the transistors made out of the concerned fins. The effects of these mechanisms are very dependent on the layout, with transistor being affected by their neighbors, and different types of transistors being affected in a different way. We propose to use complementary SRAM cells with pMOS pass-gates in order to reduce the fin length of nMOS devices and achieve long uncut fins for the pMOS devices when the cell is included in its corresponding array. Once Shallow Trench isolation and SiGe stressors are considered the proposed design improves both kinds of transistor, boosting the performance of complementary SRAM cells by more than 10% for a same failure probability and static power consumption, with no area overhead. While radiation has been a traditional concern in space electronics, the small currents and voltages used in the latest nodes are making them more vulnerable to radiation-induced transient noise, even at ground level. Even if SOI or FinFET technologies reduce the amount of energy transferred from the striking particle to the circuit, the important process variation that the smallest nodes will present will affect their radiation hardening capabilities. We demonstrate that process variations can increase the radiation-induced error rate by up to 40% in the 7nm node compared to the nominal case. This increase is higher than the improvement achieved by radiation-hardened cells suggesting that the reduction of process variations would bring a higher improvement.

Telemetría de vehículos FSAE con microcontrolador PIC32 y transceptor de radio CC1101

Quizás el campo de las telecomunicaciones sea uno de los campos en el que más se ha progresado en este último siglo y medio, con la ayuda de otros campos de la ciencia y la técnica tales como la computación, la física electrónica, y un gran número de disciplinas, que se han utilizado estos últimos 150 años en conjunción para mejorarse unas con la ayuda de otras. Por ejemplo, la química ayuda a comprender y mejorar campos como la medicina, que también a su vez se ve mejorada por los progresos en la electrónica creados por los físicos y químicos, que poseen herramientas más potentes para calcular y simular debido a los progresos computacionales. Otro de los campos que ha sufrido un gran avance en este último siglo es el de la automoción, aunque estancados en el motor de combustión, los vehículos han sufrido enormes cambios debido a la irrupción de los avances en la electrónica del automóvil con multitud de sistemas ya ampliamente integrados en los vehículos actuales. La Formula SAE® o Formula Student es una competición de diseño, organizada por la SAE International (Society of Automotive Engineers) para estudiantes de universidades de todo el mundo que promueve la ingeniería a través de una competición donde los miembros del equipo diseñan, construyen, desarrollan y compiten en un pequeño y potente monoplaza. En el ámbito educativo, evitando el sistema tradicional de clases magistrales, se introducen cambios en las metodologías de enseñanza y surge el proyecto de la Fórmula Student para lograr una mejora en las acciones formativas, que permitan ir incorporando nuevos objetivos y diseñar nuevas situaciones de aprendizaje que supongan una oportunidad para el desarrollo de competencias de los alumnos, mejorar su formación como ingenieros y contrastar sus progresos compitiendo con las mejores universidades del mundo. En este proyecto se pretende dotar a los alumnos de las escuelas de ingeniería de la UPM que desarrollan el vehículo de FSAE de una herramienta de telemetría con la que evaluar y probar comportamiento del vehículo de FSAE junto con sus subsistemas que ellos mismos diseñan, con el objetivo de evaluar el comportamiento, introducir mejoras, analizar resultados de una manera más rápida y cómoda, con el objetivo de poder progresar más rápidamente en su desarrollo, recibiendo y almacenando una realimentación directa e instantánea del funcionamiento mediante la lectura de los datos que circulan por el bus CAN del vehículo. También ofrece la posibilidad de inyectar datos a los sistemas conectados al bus CAN de manera remota. Se engloba en el conjunto de proyectos de la FSAE, más concretamente en los basados en la plataforma PIC32 y propone una solución conjunta con otros proyectos o también por sí sola. Para la ejecución del proyecto se fabricó una placa compuesta de dos placas de circuito impreso, la de la estación base que envía comandos, instrucciones y datos para inyectar en el bus CAN del vehículo mediante radiofrecuencia y la placa que incorpora el vehículo que envía las tramas que circulan por el bus CAN del vehículo con los identificadores deseados, ejecuta los comandos recibidos por radiofrecuencia y salva las tramas CAN en una memoria USB o SD Card. Las dos PCBs constituyen el hardware del proyecto. El software se compone de dos programas. Un programa para la PCB del vehículo que emite los datos a la estación base, codificado en lenguaje C con ayuda del entorno de desarrollo MPLAB de Microchip. El otro programa hecho con LabView para la PCB de la estación base que recibe los datos provenientes del vehículo y los interpreta. Se propone un hardware y una capa o funciones de software para los microcontroladores PIC32 (similar al de otros proyectos del FSAE) para la transmisión de las tramas del bus CAN del vehículo de manera inalámbrica a una estación base, capaz de insertar tramas en el bus CAN del vehículo enviadas desde la estación base. También almacena estas tramas CAN en un dispositivo USB o SD Card situado en el vehículo. Para la transmisión de los datos se hizo un estudio de las frecuencias de transmisión, la legislación aplicable y los tipos de transceptores. Se optó por utilizar la banda de radiofrecuencia de uso común ISM de 433MHz mediante el transceptor integrado CC110L de Texas Instruments altamente configurable y con interfaz SPI. Se adquirieron dos parejas de módulos compatibles, con amplificador de potencia o sin él. LabView controla la estación que recoge las tramas CAN vía RF y está dotada del mismo transceptor de radio junto con un puente de comunicaciones SPI-USB, al que se puede acceder de dos diferentes maneras, mediante librerías dll, o mediante NI-VISA con transferencias RAW-USB. La aplicación desarrollada posee una interfaz configurable por el usuario para la muestra de los futuros sensores o actuadores que se incorporen en el vehículo y es capaz de interpretar las tramas CAN, mostrarlas, gráfica, numéricamente y almacenar esta información, como si fuera el cuadro de instrumentos del vehículo. Existe una limitación de la velocidad global del sistema en forma de cuello de botella que se crea debido a las limitaciones del transceptor CC110L por lo que si no se desea filtrar los datos que se crean necesarios, sería necesario aumentar el número de canales de radio para altas ocupaciones del bus CAN. Debido a la pérdida de relaciones con el INSIA, no se pudo probar de manera real en el propio vehículo, pero se hicieron pruebas satisfactorias (hasta 1,6 km) con una configuración de tramas CAN estándar a una velocidad de transmisión de 1 Mbit/s y un tiempo de bit de 1 microsegundo. El periférico CAN del PIC32 se programará para cumplir con estas especificaciones de la ECU del vehículo, que se presupone que es la MS3 Sport de Bosch, de la que LabView interpretará las tramas CAN recibidas de manera inalámbrica. Para poder probar el sistema, ha sido necesario reutilizar el hardware y adaptar el software del primer prototipo creado, que emite tramas CAN preprogramadas con una latencia también programable y que simulará al bus CAN proporcionando los datos a transmitir por el sistema que incorpora el vehículo. Durante el desarrollo de este proyecto, en las etapas finales, el fabricante del puente de comunicaciones SPI-USB MCP2210 liberó una librería (dll) compatible y sin errores, por lo que se nos ofrecía una oportunidad interesante para la comparación de las velocidades de acceso al transceptor de radio, que se presuponía y se comprobó más eficiente que la solución ya hecha mediante NI-VISA. ABSTRACT. The Formula SAE competition is an international university applied to technological innovation in vehicles racing type formula, in which each team, made up of students, should design, construct and test a prototype each year within certain rules. The challenge of FSAE is that it is an educational project farther away than a master class. The goal of the present project is to make a tool for other students to use it in his projects related to FSAE to test and improve the vehicle, and, the improvements that can be provided by the electronics could be materialized in a victory and win the competition with this competitive advantage. A telemetry system was developed. It sends the data provided by the car’s CAN bus through a radio frequency transceiver and receive commands to execute on the system, it provides by a base station on the ground. Moreover, constant verification in real time of the status of the car or data parameters like the revolutions per minute, pressure from collectors, water temperature, and so on, can be accessed from the base station on the ground, so that, it could be possible to study the behaviour of the vehicle in early phases of the car development. A printed circuit board, composed of two boards, and two software programs in two different languages, have been developed, and built for the project implementation. The software utilized to design the PCB is Orcad10.5/Layout. The base station PCB on a PC receives data from the PCB connected to the vehicle’s CAN bus and sends commands like set CAN filters or masks, activate data logger or inject CAN frames. This PCB is connected to a PC via USB and contains a bridge USB-SPI to communicate with a similar transceiver on the vehicle PCB. LabView controls this part of the system. A special virtual Instrument (VI) had been created in order to add future new elements to the vehicle, is a dashboard, which reads the data passed from the main VI and represents them graphically to studying the behaviour of the car on track. In this special VI other alums can make modifications to accommodate the data provided from the vehicle CAN’s bus to new elements on the vehicle, show or save the CAN frames in the form or format they want. Two methods to access to SPI bus of CC110l RF transceiver over LabView have been developed with minimum changes between them. Access through NI-VISA (Virtual Instrument Software Architecture) which is a standard for configuring, programming, USB interfaces or other devices in National Instruments LabView. And access through DLL (dynamic link library) supplied by the manufacturer of the bridge USB-SPI, Microchip. Then the work is done in two forms, but the dll solution developed shows better behaviour, and increase the speed of the system because has less overload of the USB bus due to a better efficiency of the dll solution versus VISA solution. The PCB connected to the vehicle’s CAN bus receives commands from the base station PCB on a PC, and, acts in function of the command or execute actions like to inject packets into CAN bus or activate data logger. Also sends over RF the CAN frames present on the bus, which can be filtered, to avoid unnecessary radio emissions or overflowing the RF transceiver. This PCB consists of two basic pieces: A microcontroller with 32 bit architecture PIC32MX795F512L from Microchip and the radio transceiver integrated circuit CC110l from Texas Instruments. The PIC32MX795F512L has an integrated CAN and several peripherals like SPI controllers that are utilized to communicate with RF transceiver and SD Card. The USB controller on the PIC32 is utilized to store CAN data on a USB memory, and change notification peripheral is utilized like an external interrupt. Hardware for other peripherals is accessible. The software part of this PCB is coded in C with MPLAB from Microchip, and programming over PICkit 3 Programmer, also from Microchip. Some of his libraries have been modified to work properly with this project and other was created specifically for this project. In the phase for RF selection and design is made a study to clarify the general aspects of regulations for the this project in order to understand it and select the proper band, frequency, and radio transceiver for the activities developed in the project. From the different options available it selects a common use band ICM, with less regulation and free to emit with restrictions and disadvantages like high occupation. The transceiver utilized to transmit and receive the data CC110l is an integrated circuit which needs fewer components from Texas Instruments and it can be accessed through SPI bus. Basically is a state machine which changes his state whit commands received over an SPI bus or internal events. The transceiver has several programmable general purpose Inputs and outputs. These GPIOs are connected to PIC32 change notification input to generate an interrupt or connected to GPIO to MCP2210 USB-SPI bridge to inform to the base station for a packet received. A two pair of modules of CC110l radio module kit from different output power has been purchased which includes an antenna. This is to keep away from fabrication mistakes in RF hardware part or designs, although reference design and gerbers files are available on the webpage of the chip manufacturer. A neck bottle is present on the complete system, because the maximum data rate of CC110l transceiver is a half than CAN bus data rate, hence for high occupation of CAN bus is recommendable to filter the data or add more radio channels, because the buffers can’t sustain this load along the time. Unfortunately, during the development of the project, the relations with the INSIA, who develops the vehicle, was lost, for this reason, will be made impossible to test the final phases of the project like integration on the car, final test of integration, place of the antenna, enclosure of the electronics, connectors selection, etc. To test or evaluate the system, it was necessary to simulate the CAN bus with a hardware to feed the system with entry data. An early hardware prototype was adapted his software to send programed CAN frames at a fixed data rate and certain timing who simulate several levels of occupation of the CAN Bus. This CAN frames emulates the Bosch ECU MS3 Sport.

Especificações e concepções de front-end UHF integrado e multipadrão em tecnologia CMOS 130nm

The Brazilian Environmental Data Collecting System (SBCDA) collects and broadcasts meteorological and environmental data, to be handled by dozens of institutions and organizations. The system space segment, composed by the data collecting satellites, plays an important role for the system operation. To ensure the continuity and quality of these services, efforts are being made to the development of new satellite architectures. Aiming a reduction of size and power consumption, the design of an integrated circuit containing a receiver front-end is proposed, to be embedded in the next SBCDA satellite generations. The circuit will also operate under the requirements of the international data collecting standard ARGOS. This work focuses on the design of an UHF low noise amplifier and mixers in a CMOS standard technology. The specifi- cations are firstly described and the circuit topologies presented. Then the circuit conception is discussed and the design variables derived. Finally, the layout is designed and the final results are commented. The chip will be fabricated in a 130 nm technology from ST Microelectronics.

High-Performance WSe2 CMOS Technology and Integrated Circuits.

Because of their extraordinary structural and electrical properties, two dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (~38) and small static power (Pico-Watts), paving the way for low power electronic system in 2D materials.

A Functional Verification Methodology Based on Parameter Domains for Efficient Input Stimuli Generation and Coverage Modeling

Modern Integrated Circuit (IC) design is characterized by a strong trend of Intellectual Property (IP) core integration into complex system-on-chip (SOC) architectures. These cores require thorough verification of their functionality to avoid erroneous behavior in the final device. Formal verification methods are capable of detecting any design bug. However, due to state explosion, their use remains limited to small circuits. Alternatively, simulation-based verification can explore hardware descriptions of any size, although the corresponding stimulus generation, as well as functional coverage definition, must be carefully planned to guarantee its efficacy. In general, static input space optimization methodologies have shown better efficiency and results than, for instance, Coverage Directed Verification (CDV) techniques, although they act on different facets of the monitored system and are not exclusive. This work presents a constrained-random simulation-based functional verification methodology where, on the basis of the Parameter Domains (PD) formalism, irrelevant and invalid test case scenarios are removed from the input space. To this purpose, a tool to automatically generate PD-based stimuli sources was developed. Additionally, we have developed a second tool to generate functional coverage models that fit exactly to the PD-based input space. Both the input stimuli and coverage model enhancements, resulted in a notable testbench efficiency increase, if compared to testbenches with traditional stimulation and coverage scenarios: 22% simulation time reduction when generating stimuli with our PD-based stimuli sources (still with a conventional coverage model), and 56% simulation time reduction when combining our stimuli sources with their corresponding, automatically generated, coverage models.

Micropatterning of single-walled carbon nanotube forest

In this work, high-aligned single-walled carbon nanotube (SWCNT) forest have been grown using a high-density plasma chemical vapor deposition technique (at room temperature) and patterned into micro-structures by photolithographic techniques, that are commonly used for silicon integrated circuit fabrication. The SWCNTs were obtained using pure methane plasma and iron as precursor material (seed). For the growth carbon SWCNT forest the process pressure was 15 mTorr, the RF power was 250W and the total time of the deposition process was 3 h. The micropatterning processes of the SWCNT forest included conventional photolithography and magnetron sputtering for growing an iron layer (precursor material). In this situation, the iron layer is patterned and high-aligned SWCNTs are grown in the where iron is present, and DLC is formed in the regions where the iron precursor is not present. The results can be proven by Scanning Electronic Microscopy and Raman Spectroscopy. Thus, it is possible to fabricate SWCNT forest-based electronic and optoelectronic devices. (C) 2010 Elsevier B.V. All rights reserved.

The effects of silica fillers on the gelation and vitrification of highly filled epoxy-amine thermosets

Highly filled thermosets are used in applications such as integrated circuit (IC) packaging. However, a detailed understanding of the effects of the fillers on the macroscopic cure properties is limited by the complex cure of such systems. This work systematically quantifies the effects of filler content on the kinetics, gelation and vitrification of a model silica-filled epoxy/amine system in order to begin to understand the role of the filler in IC packaging cure. At high cure temperatures (100 degreesC and above) there appears to be no effect of fillers on cure kinetics and gelation and vitrification times. However, a decrease in the gelation and vitrification times and increase the reaction rate is seen with increasing filler content at low cure temperatures (60-90 degreesC). An explanation for these results is given in terms of catalysation of the epoxy amine reaction by hydrogen donor species present on the silica surface and interfacial effects.

Projecto e implementação de um sistema de alimentação para um transformador de alta tensão

Neste trabalho pretende-se estudar, dimensionar e implementar experimentalmente de um sistema de alimentação para transformadores de alta tensão a alta frequência. Este sistema será constituído por dois elementos principais, um rectificador monofásico em ponte totalmente controlado e por um inversor de tensão. Inicialmente realizou-se um estudo sobre as diferentes topologias possíveis para o rectificador considerando diferentes tipos de carga. Realizou-se, também, um estudo sobre o circuito de geração dos impulsos de disparo dos tiristores, executado com base num circuito integrado TCA 785, dimensionou-se os elementos constituintes do circuito de disparo, e de um sistema de controlo da tensão de saída do rectificador. Posteriormente estudou-se o funcionamento do inversor de tensão, definindo-se os modos de operação e dimensionou-se um circuito ressonante tendo em conta os parâmetros construtivos do transformador que se pretende utilizar. Finalmente procedeu-se à implementação prática dos sistemas previamente dimensionados e simulados e à apresentação dos respectivos resultados.

Projecto de um conversor redutor CC-CC comutado para SoC

A evolução da tecnologia CMOS tem possibilitado uma maior densidade de integração de circuitos tornando possível o aumento da complexidade dos sistemas. No entanto, a integração de circuitos de gestão de potência continua ainda em estudo devido à dificuldade de integrar todos os componentes. Esta solução apresenta elevadas vantagens, especialmente em aplicações electrónicas portáteis alimentadas a baterias, onde a autonomia é das principais características. No âmbito dos conversores redutores existem várias topologias de circuitos que são estudadas na área de integração. Na categoria dos conversores lineares utiliza-se o LDO (Low Dropout Regulator), apresentando no entanto baixa eficiência para relações de conversão elevadas. Os conversores comutados são elaborados através do recurso a circuitos de comutação abrupta, em que a eficiência deste tipo de conversores não depende do rácio de transformação entre a tensão de entrada e a de saída. A diminuição física dos processos CMOS tem como consequência a redução da tensão máxima que os transístores suportam, impondo o estudo de soluções tolerantes a “altatensão”, com o intuito de manter compatibilidade com tensões superiores que existam na placa onde o circuito é incluído. Os sistemas de gestão de energia são os primeiros a acompanhar esta evolução, tendo de estar aptos a fornecer a tensão que os restantes circuitos requerem. Neste trabalho é abordada uma metodologia de projecto para conversores redutores CCCC comutados em tecnologia CMOS, tendo-se maximizado a frequência com vista à integração dos componentes de filtragem em circuito integrado. A metodologia incide sobre a optimização das perdas totais inerentes à comutação e condução, dos transístores de potência e respectivos circuitos auxiliares. É apresentada uma nova metodologia para o desenvolvimento de conversores tolerantes a “alta-tensão”.

Melhoria da eficiência de amplificadores de potência para sinais RF com envolvente variável

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia Electrónica e Telecomunicações

Trends Of CPU, GPU and FPGA for high-performance computing

Floating-point computing with more than one TFLOP of peak performance is already a reality in recent Field-Programmable Gate Arrays (FPGA). General-Purpose Graphics Processing Units (GPGPU) and recent many-core CPUs have also taken advantage of the recent technological innovations in integrated circuit (IC) design and had also dramatically improved their peak performances. In this paper, we compare the trends of these computing architectures for high-performance computing and survey these platforms in the execution of algorithms belonging to different scientific application domains. Trends in peak performance, power consumption and sustained performances, for particular applications, show that FPGAs are increasing the gap to GPUs and many-core CPUs moving them away from high-performance computing with intensive floating-point calculations. FPGAs become competitive for custom floating-point or fixed-point representations, for smaller input sizes of certain algorithms, for combinational logic problems and parallel map-reduce problems. © 2014 Technical University of Munich (TUM).