893 resultados para High Power Semiconductor Laser Arrays
Radio over free space optical link using a directly modulated two-electrode high power tapered laser
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The analog modulation performance of a high-power two-electrode tapered laser is investigated. A 25dB dynamic range for 2.4GHz 802.11g signals is achieved with a 26dB loss budget, showing a >1km free space range is possible. © 2010 Optical Society of America.
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Based on the high frequency techniques such as frequency response measurement, equivalent circuit modeling and packaging parasitics compensation, a comprehensive optimization method for packaging high-speed semiconductor laser module is presented in this paper. The experiments show that the small-signal magnitude frequency response of the TO packaged laser module is superior to that of laser diode in frequencies, and the in-band flatness and the phase-frequency linearity are also improved significantly.
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A high-power AlGaInP laser diode with current-injection-free region near the facet is successfully fabricated by metaorganic chemical vapor deposition (MOCVD) using the (100) direction n-GaAs substrates with a misorientation of 15 deg toward the (011) direction. The maximum continuous wave output power is about 90 mW for the traditional structure. In comparison, the maximum output power is enhanced by about 67%, and achieves 150 mW for LDs with current-infection-free regions. The fundamental transverse-mode operation is obtained up to 70 mW. Output characteristics at high temperatures are also improved greatly for an LD with a current-injection-free region, and the highest operation temperature is 70 C at 50 mW without kink. The threshold current is about 33 mA, the operation current and the slope efficiency at 100 mW are 120 mA and 0.9 mW/mA, respectively. The lasing wavelength is 658.4 nm at room-temperature 50 mW. (c) 2006 Society of Photo-Optical Instrumentation Engineers.
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The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/AlGaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm.
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于2010-11-23批量导入
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The spatiotemporal pulse dynamics of a high-power relativistic laser pulse interacting with an electron-positron-ion plasmas is investigated theoretically and numerically. The occurrence of pulse compression is studied. The dependence of the mechanism on the concentration of the background ions in electron positron plasma is emphasized.
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A high power Nz laser of the double-Blumlein type having a modified gas flow system, electrode configuration, and discharge geometry with minimum inductance is described. By incorporating a triggere’d-pressurized spark gap switch, arc-free operation was achieved for a wide E/P range. The device gives a peak power in excess of 700 kW with a FWHM of 3 ns and an efficiency of 0.51%, which is remarkably high for a pulsed nitrogen laser system. The dependence of output power on parameters such as operating pressure, voltage, and repetition rate are discussed.
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Objective. The objective of this study was to evaluate the disinfection degree of dentine caused by the use of diode laser after biomechanical procedures. Study design. Thirty teeth were sectioned and roots were autoclaved and incubated for 4 weeks with a suspension of Enterococcus faecalis. The specimens were randomly divided into 3 groups (n = 10): G1, instrumented with rotary files, irrigated with 0.5% sodium hypochlorite and 17% EDTA-T, and then irradiated by 830-nm diode laser at 3 W; G2, the same procedures as G1 but without laser irradiation; and G3, irrigation with saline solution (control). Dentin samples of each third were collected with carbide burs and aliquots were sowed to count viable cells. Results. The disinfection degree achieved was 100% in G1 and 98.39% in G2, when compared to the control group (G3). Conclusion. Diode laser irradiation provided increased disinfection of the deep radicular dentin in the parameters and samples tested.
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半导体激光器阵列的应用已基本覆盖了整个光电子领域,成为当今光电子科学的重要技术。本文介绍了半导体激光器阵列的发展及其应用。着重阐述了半导体激光器阵列的封装技术——热沉材料的选择及其结构优化、热沉与半导体激光器阵列之间的焊接技术、半导体激光器阵列的冷却技术、与光纤的耦合技术等。
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GaAs/AIGaAs two-dimensional quantum-well wire laser arrays fabricated by metal-organic chemical vapour deposition on nonplanar substrates have realised a linear light pulse output Fewer of over 100mW. This is the highest figure reported to date for all kinds of quantum-well wire lasers.
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By using quite uniformly nine-stacks side-around arranged compact pumping system, a high power Nd:YAG ceramic quasi-CW laser with high slope efficiency of 62% has been demonstrated. With 450 W quasi-CW stacked laser diode bars pumping at 808 nm, performance of the Nd: YAG ceramic laser with different output coupling mirrors has been investigated. Optimum output power of 236 W at 1064 nm was obtained and corresponding optical-to-optical conversion efficiency was as high as 52.5%. The laser system operated quite stably and no saturation phenomena have been observed, which means higher output laser power could be obtained if injecting higher pumping power. The still-evolving Nd: YAG ceramics are potential super excellent media for high power practical laser applications. (c) 2005 Optical Society of America.
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A novel AIN monolithic microchannel cooled heatsink for high power laser diode array is introduced.The high power stack laser diode array with an AIN monolithic microchannel heatsink is fabricated and tested.The thermal impedance of a 10 stack laser diode array is 0.121℃/W.The pitch between two adjacent bars is 1.17mm.The power level of 611W is achieved under the 20% duty factor condition at an emission wavelength around 808nm.
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The high intensity diode laser has been studied in periodontics for the reduction of subgingival bacteria in non-surgical treatment. Our study evaluated the bacterial effect as well as changes in periodontal clinical parameters promoted by root scaling and planing associated with this wavelength. Twenty-seven patients randomly assigned in two groups underwent root scaling and planing on the tested sites, and only the experimental group received the diode laser irradiation. Among the clinical parameters studied, the clinical probing depth (CPD) and the clinical attachment level (CAL) resulted in significant enhancement in the control group when compared with the experimental group (P = 0.014 and P = 0.039, respectively). The results were similar for both groups regarding the plaque index (PI) and bleeding on probing (BP). No significant difference in the microbiological parameters was observed between the control and experimental groups. It was possible to conclude that the high power diode laser adjunct to the non-surgical periodontal treatment did not promote additional effects to the conventional periodontal treatment.