Growth and characterization of semi-insulating GaN films grown by MOCVD

High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arc-min, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 degrees C was measured to be approximate 10(9) and 10(6) Omega(.)cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.

Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)

We have grown MnxGe1-x films (x=0, 0.06, 0.1) on Si (001) substrates by magnetron cosputtering, and have explored the resulting structural, morphological, electrical and magnetic properties. X-ray diffraction results show there is no secondary phase except Ge in the Mn0.06Ge0.94 film while new phase appears in the Mn0.1Ge0.9 film. Nanocrystals are formed in the Mn0.06Ge0.94 film, determined by field-emission scanning electron microscopy. Hall measurement indicates that the Mn0.06Ge0.94 film is p-type semiconductor and hole carrier concentration is 6.07 X 10(19) cm(-3) while the MnxGe1-x films with x=0 has n-type carriers. The field dependence of magnetization was measured using alternating gradient magnetometer, and it has been indicated that the Mn0.06Ge0.94 film is ferromagnetic at room temperature. (c) 2005 Elsevier Ltd. All rights reserved.

AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD

A novel AlGaN/GaN/GaN/GaN double heterojunction high electron mobility transistors (DH-HEMTS) structure with an AlN interlayer on sapphire substrate has been grown by MOCVD. The structure featured a 6-10 nm In0.1Ga0.9N layer inserted between the GaN channel and GaN buffer. And wer also inserted one ultrathin. AlN interlayer into the Al/GaN/GaN interface, which significantly enhanced the mobility of two-dimensional electron gas (2DEG) existed in the GaN channel. AFM result of this structure shows a good surface morphology and a low dislocation density, with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu m x 5 mu m. Temperature dependent Hall measurement was performed on this sample, and a mobility as high as 1950 cm(2)/Vs at room temperature (RT) was obtained. The sheet carrier density was 9.89 x10(12) cm(2), and average sheet resistance of 327 Omega/sq was achieved. The mobility obtained in this paper is about 50% higher than other results of similar structures which have been reported. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth and characterization of semi-insulating GaN films grown by MOCVD

High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arc-min, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 degrees C was measured to be approximate 10(9) and 10(6) Omega(.)cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.

Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO

Wurtzite ZnO has many potential applications in optoelectronic devices, and the hydrogenated ZnO exhibits excellent photoelectronic properties compared to undoped ZnO; however, the structure of H-related defects is still unclear. In this article, the effects of hydrogen-plasma treatment and subsequent annealing on the electrical and optical properties of ZnO films were investigated by a combination of Hall measurement, Raman scattering, and photoluminescence. It is found that two types of hydrogen-related defects, namely, the interstitial hydrogen located at the bond-centered (H-BC) and the hydrogen trapped at a O vacancy (H-O), are responsible for the n-type background conductivity of ZnO films. Besides introducing two hydrogen-related donor states, the incorporated hydrogen passivates defects at grain boundaries. With increasing annealing temperatures, the unstable H-BC atoms gradually diffuse out of the ZnO films and part of them are converted into H-O, which gives rise to two anomalous Raman peaks at 275 and 510 cm(-1). These results help to clarify the relationship between the hydrogen-related defects in ZnO described in various studies and the free carriers that are produced by the introduction of hydrogen.

PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS/SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER

Recently, we reported successful growth of high-quality GaAs/Si epilayers by using a very thin amorphous Si film as buffer layer. In this paper, the impurity properties of this kind of GaAs/Si epilayers have been studied by using PL spectrum, SIMS and Hall measurement. Compared to a typical PL spectrum of the GaAs/Si epilayers grown by conventional two-step method, a new peak was observed in our PL spectrum at the energy of 1.462 eV, which is assigned to the band-to-silicon acceptor recombination. The SIMS analysis indicates that the silicon concentration in this kind of GaAs/Si epilayers is about 10(18) cm(-3). But its carrier concentration (about 4 x 10(17) cm(-3)) is lower than the silicon concentration. The lower carrier concentration in this kind of GaAs/Si epilayer can be interpreted both as the result of higher compensation and as the result of the formation of the donor-defect complex. We also found that the high-quality and low-Si-concentration GaAs/Si epilayers can be regrown by using this kind of GaAs/Si epilayer as substrate. The FWHM of the X-ray (004) rocking curve from this regrowth GaAs epilayer is 118 '', it is much less than that of the first growth GaAs epilayer (160 '') and other reports for the GaAs/Si epilayer grown by using conventional two-step method (similar to 200 '').

RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content

A Si doped AlGaN/GaN HEMT structure with high Al content (x= 44%) in the barrier layer is grown on sapphire substrate by RF-MBE. The structural and electrical properties of the heterostructure are investigated by the triple axis X-ray diffraction and Van der Pauw-Hall measurement, respectively. The observed prominent Bragg peaks of the GaN and AlGaN and the Hall results show that the structure is of high quality with smooth interface.fabricated and characterized. Better DC characteristics, maximum drain current of 1.0A/mm and extrinsic transconductance of 218mS/mm are obtained when compared with HEMTs fabricated using structures with lower Al mole fraction in the AlGaN barrier layer. The results suggest that the high Al content in the AlGaN barrier layer is promising in improving material electrical properties and device performance.

Hall thruster sequencer using Intel-8051 microcontroller for ion thrust measurement

Hall thrusters, such as Stationary Plasma Thruster (SPT), have been widely used on board modern satellites placed in geo-synchronows orbits for reasons such as orbit maintenance, repositioning and attitude control. In order to study the performance of the stationary plasma thruster, the thrust produced by it has been measured, using a thrust balance with strain gauge sensors under vacuum conditions, by activating the thruster. This activation of thruster has been carried out by switching ON and switching OFF of the necessary power supplies and control of other feed system such as the propellant flow in a particular sequence. Hitherto, these operations were done manually in the required sequence. This paper reports the attempt made to automate the sequential operation of the power supplies and the necessary control valves of the feed system using Intel 8051 microcontroller. This automation has made thrust measurements easier and more sophisticated.

Measurement of single electron spin with submicron Hall magnetometer

Submicron Hall magnetometry has been demonstrated as an efficient technique to probe extremely weak magnetic fields. In this letter, we analyze the possibility of employing it to detect single electron spin. Signal strength and readout time are estimated and discussed with respect to a number of practical issues. (C) 2005 American Institute of Physics.

Compensator Design for Closed Loop Hall-Effect Current Sensors

Closed loop current sensors used in power electronics applications are expected to have high bandwidth and minimal measurement transients. In this paper, a closed loop compensated Hall-effect current sensor is modeled. The model is used to tune the sensor's compensator. Analytical expression of step response is used to evaluate the performance of the PI compensator in the current sensor. This analysis is used to devise a procedure to design parameters of the PI compensator for fast dynamic response and for small dynamic error. A prototype current sensor is built in the laboratory. Simulations using the model are compared with experimental results to validate the model and to study the variation in performance with compensator parameters. The performance of the designed PI compensator for the sensor is compared with a commercial current sensor. The measured bandwidth of the designed current sensor is above 200 kHz, which is comparable to commercial standards. Implementation issues of PI compensator using operational amplifiers are also addressed.

Measurement of the neutron (^3He) spin structure function at low Q^2 : a connection between the Bjorken and Drell-Hearn-Gerasimov sum rules

The spin dependent cross sections, σT_1/2 and σT_3/2 , and asymmetries, A_∥ and A_⊥ for ³He have been measured at the Jefferson Lab's Hall A facility. The inclusive scattering process ³He(e,e)X was performed for initial beam energies ranging from 0.86 to 5.1 GeV, at a scattering angle of 15.5°. Data includes measurements from the quasielastic peak, resonance region, and the deep inelastic regime. An approximation for the extended Gerasimov-Drell-Hearn integral is presented at a 4-momentum transfer Q² of 0.2-1.0 GeV².

Also presented are results on the performance of the polarized ³He target. Polarization of ³He was achieved by the process of spin-exchange collisions with optically pumped rubidium vapor. The ³He polarization was monitored using the NMR technique of adiabatic fast passage (AFP). The average target polarization was approximately 35% and was determined to have a systematic uncertainty of roughly ±4% relative.

Direct measurement of the vortex migration caused by traveling magnetic wave

We studied the magnetisation of a 2 in. diameter YBCO thin film in the presence of traveling magnetic waves with six hall sensors. Simulation based on finite element method was conducted to reproduce the process of magnetisation. We discovered that the magnetisation of YBCO thin film based on traveling waves does not follow the constant current density assumption as used in the standing wave condition. We have shown that the traveling wave is more efficient in transporting the flux into the YBCO thin film, which suggests the potential of a flux injection device for high temperature superconducting coils. © 2014 AIP Publishing LLC.

Measurement of the differential cross section for the reaction gamman-->pi- p from deuterium.

We report a measurement of the differential cross section for the gamman-->pi- p process from the CLAS detector at Jefferson Laboratory in Hall B for photon energies between 1.0 and 3.5 GeV and pion center-of-mass (c.m.) angles (thetac.m.) between 50 degrees and 115 degrees. We confirm a previous indication of a broad enhancement around a c.m. energy ([sqrt]s) of 2.1 GeV at thetac.m.=90 degrees in the scaled differential cross section s7dsigma/dt and a rapid falloff in a center-of-mass energy region of about 400 MeV following the enhancement. Our data show an angular dependence of this enhancement as the suggested scaling region is approached for thetac.m. from 70 degrees to 105 degrees.

Receipt from E. Priddle for measurement of slate roof

Receipt from E. Priddle for measurement of slate roof, June 24, 1876.