990 resultados para Degenerate elliptic equations


Relevância:

100.00% 100.00%

Publicador:

Resumo:

2000 Mathematics Subject Classification: 35J70, 35P15.

Relevância:

100.00% 100.00%

Publicador:

Resumo:

This Note aims at presenting a simple and efficient procedure to derive the structure of high-order corrector estimates for the homogenization limit applied to a semi-linear elliptic equation posed in perforated domains. Our working technique relies on monotone iterations combined with formal two-scale homogenization asymptotics. It can be adapted to handle more complex scenarios including for instance nonlinearities posed at the boundary of perforations and the vectorial case, when the model equations are coupled only through the nonlinear production terms.

Relevância:

100.00% 100.00%

Publicador:

Resumo:

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Relevância:

100.00% 100.00%

Publicador:

Resumo:

2010 Mathematics Subject Classification: 35B65, 35S05, 35A20.

Relevância:

90.00% 90.00%

Publicador:

Resumo:

We present a Galerkin method with piecewise polynomial continuous elements for fully nonlinear elliptic equations. A key tool is the discretization proposed in Lakkis and Pryer, 2011, allowing us to work directly on the strong form of a linear PDE. An added benefit to making use of this discretization method is that a recovered (finite element) Hessian is a byproduct of the solution process. We build on the linear method and ultimately construct two different methodologies for the solution of second order fully nonlinear PDEs. Benchmark numerical results illustrate the convergence properties of the scheme for some test problems as well as the Monge–Amp`ere equation and the Pucci equation.

Relevância:

90.00% 90.00%

Publicador:

Resumo:

In this paper we establish the existence of standing wave solutions for quasilinear Schrodinger equations involving critical growth. By using a change of variables, the quasilinear equations are reduced to semilinear one. whose associated functionals are well defined in the usual Sobolev space and satisfy the geometric conditions of the mountain pass theorem. Using this fact, we obtain a Cerami sequence converging weakly to a solution v. In the proof that v is nontrivial, the main tool is the concentration-compactness principle due to P.L. Lions together with some classical arguments used by H. Brezis and L. Nirenberg (1983) in [9]. (C) 2009 Elsevier Inc. All rights reserved.

Relevância:

90.00% 90.00%

Publicador:

Resumo:

We consider the Dirichlet problem for the equation -Delta u = lambda u +/- (x, u) + h(x) in a bounded domain, where f has a sublinear growth and h is an element of L-2. We find suitable conditions on f and It in order to have at least two solutions for X near to an eigenvalue of -Delta. A typical example to which our results apply is when f (x, u) behaves at infinity like a(x)vertical bar u vertical bar(q-2)u, with M > a(x) > delta > 0, and I < q < 2. (C) 2007 Elsevier Inc. All rights reserved.

Relevância:

90.00% 90.00%

Publicador:

Resumo:

We analyze the behavior of solutions of nonlinear elliptic equations with nonlinear boundary conditions of type partial derivative u/partial derivative n + g( x, u) = 0 when the boundary of the domain varies very rapidly. We show that the limit boundary condition is given by partial derivative u/partial derivative n+gamma(x) g(x, u) = 0, where gamma(x) is a factor related to the oscillations of the boundary at point x. For the case where we have a Lipschitz deformation of the boundary,. is a bounded function and we show the convergence of the solutions in H-1 and C-alpha norms and the convergence of the eigenvalues and eigenfunctions of the linearization around the solutions. If, moreover, a solution of the limit problem is hyperbolic, then we show that the perturbed equation has one and only one solution nearby.

Relevância:

90.00% 90.00%

Publicador:

Resumo:

Some superlinear fourth order elliptic equations are considered. A family of solutions is proved to exist and to concentrate at a point in the limit. The proof relies on variational methods and makes use of a weak version of the Ambrosetti-Rabinowitz condition. The existence and concentration of solutions are related to a suitable truncated equation. (C) 2012 Elsevier Inc. All rights reserved.

Relevância:

90.00% 90.00%

Publicador:

Resumo:

In this paper, we establish the existence of many rotationally non-equivalent and nonradial solutions for the following class of quasilinear problems (p) {-Delta(N)u = lambda f(vertical bar x vertical bar, u) x is an element of Omega(r), u > 0 x is an element of Omega(r), u = 0 x is an element of Omega(r), where Omega(r) = {x is an element of R-N : r < vertical bar x vertical bar < r + 1}, N >= 2, N not equal 3, r >0, lambda > 0, Delta(N)u = div(vertical bar del u vertical bar(N-2)del u) is the N-Laplacian operator and f is a continuous function with exponential critical growth.

Relevância:

90.00% 90.00%

Publicador:

Resumo:

In this paper, we investigate the behavior of a family of steady-state solutions of a nonlinear reaction diffusion equation when some reaction and potential terms are concentrated in a e-neighborhood of a portion G of the boundary. We assume that this e-neighborhood shrinks to G as the small parameter e goes to zero. Also, we suppose the upper boundary of this e-strip presents a highly oscillatory behavior. Our main goal here was to show that this family of solutions converges to the solutions of a limit problem, a nonlinear elliptic equation that captures the oscillatory behavior. Indeed, the reaction term and concentrating potential are transformed into a flux condition and a potential on G, which depends on the oscillating neighborhood. Copyright (C) 2012 John Wiley & Sons, Ltd.

Relevância:

90.00% 90.00%

Publicador:

Resumo:

This paper is concerned with the existence of multi-bump solutions to a class of quasilinear Schrodinger equations in R. The proof relies on variational methods and combines some arguments given by del Pino and Felmer, Ding and Tanaka, and Sere.

Relevância:

90.00% 90.00%

Publicador:

Resumo:

In this thesis a mathematical model was derived that describes the charge and energy transport in semiconductor devices like transistors. Moreover, numerical simulations of these physical processes are performed. In order to accomplish this, methods of theoretical physics, functional analysis, numerical mathematics and computer programming are applied. After an introduction to the status quo of semiconductor device simulation methods and a brief review of historical facts up to now, the attention is shifted to the construction of a model, which serves as the basis of the subsequent derivations in the thesis. Thereby the starting point is an important equation of the theory of dilute gases. From this equation the model equations are derived and specified by means of a series expansion method. This is done in a multi-stage derivation process, which is mainly taken from a scientific paper and which does not constitute the focus of this thesis. In the following phase we specify the mathematical setting and make precise the model assumptions. Thereby we make use of methods of functional analysis. Since the equations we deal with are coupled, we are concerned with a nonstandard problem. In contrary, the theory of scalar elliptic equations is established meanwhile. Subsequently, we are preoccupied with the numerical discretization of the equations. A special finite-element method is used for the discretization. This special approach has to be done in order to make the numerical results appropriate for practical application. By a series of transformations from the discrete model we derive a system of algebraic equations that are eligible for numerical evaluation. Using self-made computer programs we solve the equations to get approximate solutions. These programs are based on new and specialized iteration procedures that are developed and thoroughly tested within the frame of this research work. Due to their importance and their novel status, they are explained and demonstrated in detail. We compare these new iterations with a standard method that is complemented by a feature to fit in the current context. A further innovation is the computation of solutions in three-dimensional domains, which are still rare. Special attention is paid to applicability of the 3D simulation tools. The programs are designed to have justifiable working complexity. The simulation results of some models of contemporary semiconductor devices are shown and detailed comments on the results are given. Eventually, we make a prospect on future development and enhancements of the models and of the algorithms that we used.

Relevância:

90.00% 90.00%

Publicador:

Resumo:

"Only the material on elliptic equations will appear in these notes."