Estimation of Series Capacitance of a Transformer Winding Based on Frequency-Response Data: An Indirect Measurement Approach

A novel procedure to determine the series capacitance of a transformer winding, based on frequency-response measurements, is reported. It is based on converting the measured driving-point impedance magnitude response into a rational function and thereafter exploiting the ratio of a specific coefficient in the numerator and denominator polynomial, which leads to the direct estimation of series capacitance. The theoretical formulations are derived for a mutually coupled ladder-network model, followed by sample calculations. The results obtained are accurate and its feasibility is demonstrated by experiments on model-coil and on actual, single, isolated transformer windings (layered, continuous disc, and interleaved disc). The authors believe that the proposed method is the closest one can get to indirectly measuring series capacitance.

Quantum capacitance in bilayer graphene nanoribbon

We address a physically based analytical model of quantum capacitance (C-Q) in a bilayer graphene nanoribbon (BGN) under the application of an external longitudinal static bias. We demonstrate that as the gap (Delta) about the Dirac point increases, a phenomenological population inversion of the carriers in the two sets of subbands occurs. This results in a periodic and composite oscillatory behavior in the C-Q with the channel potential, which also decreases with increase in Delta. We also study the quantum size effects on the C-Q, which signatures heavy spatial oscillations due to the occurrence of van Hove singularities in the total density-of-states function of both the sets of subbands. All the mathematical results as derived in this paper converge to the corresponding well-known solution of graphene under certain limiting conditions and this compatibility is an indirect test of our theoretical formalism. (C) 2012 Elsevier By. All rights reserved.

Calibration and linearity verification of capacitance type cryo level indicators using cryogenically multiplexed diode array

In space application the precision level measurement of cryogenic liquids in the storage tanks is done using triple redundant capacitance level sensor, for control and safety point of view. The linearity of each sensor element depends upon the cylindricity and concentricity of the internal and external electrodes. The complexity of calibrating all sensors together has been addressed by two step calibration methodology which has been developed and used for the calibration of six capacitance sensors. All calibrations are done using Liquid Nitrogen (LN2) as a cryogenic fluid. In the first step of calibration, one of the elements of Liquid Hydrogen (LH2) level sensor is calibrated using 700mm eleven point discrete diode array. Four wire method has been used for the diode array. Thus a linearity curve for a single element of LH2 is obtained. In second step of calibration, using the equation thus obtained for the above sensor, it is considered as a reference for calibrating remaining elements of the same LH2 sensor and other level sensor (either Liquid Oxygen (LOX) or LH2). The elimination of stray capacitance for the capacitance level probes has been attempted. The automatic data logging of capacitance values through GPIB is done using LabVIEW 8.5.

An EQCM investigation of capacitance of MnO2 in electrolytes containing multivalent cations

MnO2 is electrochemically deposited on Au coated quartz crystal to study the electrochemical capacitance properties and to monitor the mass variations that accompany reversible adsorption/desorption of Na+, Mg2+ and La3+ ions during discharge/charge cycling. There is an increase in the values of specific capacitance of MnO2 with increase in charge of the cation in the electrolyte. Also, there is an increase in mass during discharge due to adsorption of cations from the electrolyte resulting from reduction of MnO2. Mass decreases during charging process due to desorption of cations. The magnitude of mass variation is approximately proportional to the atomic weight of the cationic element. (C) 2012 Elsevier B.V. All rights reserved.

Estimation of Series Capacitance for a Three-Phase Transformer Winding From Its Measured Frequency Response

Recently, authors published a method to indirectly measure series capacitance (C-s) of a single, isolated, uniformly wound transformer winding, from its measured frequency response. The next step was to implement it on an actual three-phase transformer. This task is not as straightforward as it might appear at first glance, since the measured frequency response on a three-phase transformer is influenced by nontested windings and their terminal connections, core, tank, etc. To extract the correct value of C-s from this composite frequency response, the formulation has to be reworked to first identify all significant influences and then include their effects. Initially, the modified method and experimental results on a three-phase transformer (4 MVA, 33 kV/433 V) are presented along with results on the winding considered in isolation (for cross validation). Later, the method is directly implemented on another three-phase unit (3.5 MVA, 13.8 kV/765 V) to show repeatability.

Time-Domain Approach to Estimate Series Capacitance of an Isolated Phase Winding of a Transformer

Information available in frequency response data is equivalently available in the time domain as a response due to an impulse excitation. The idea to pursue this equivalence to estimate series capacitance is linked to the well-known fact that under impulse excitation, the line/neutral current in a transformer has three distinct components, of which, the initial capacitive component is the first to manifest, followed by the oscillatory and inductive components. Of these, the capacitive component is temporally well separated from the rest-a crucial feature permitting its direct access and analysis. Further, the winding initially behaves as a pure capacitive network, so the initial component must obviously originate from only the (series and shunt) capacitances. With this logic, it should therefore be possible to estimate series capacitance, just by measuring the initial capacitive component of line current and the total shunt capacitance. The principle of the method and details of its implementation on two actual isolated transformerwindings (uniformly wound) are presented. For implementation, a low-voltage recurrent surge generator, a current probe, and a digital oscilloscope are all that is needed. The method is simple and requires no programming and needs least user intervention, thus paving the way for its widespread use.

Probing 2D black phosphorus by quantum capacitance measurements

Two-dimensional materials and their heterostructures have emerged as a new class of materials, not only for fundamental physics but also for electronic and optoelectronic applications. Black phosphorus (BP) is a relatively new addition to this class of materials. Its strong in-plane anisotropy makes BP a unique material for making conceptually new types of electronic devices. However, the global density of states (DOS) of BP in device geometry has not been measured experimentally. Here, we report the quantum capacitance measurements together with the conductance measurements on an hBN-protected few-layer BP (similar to six layers) in a dual-gated field effect transistor (FET) geometry. The measured DOS from our quantum capacitance is compared with density functional theory (DFT). Our results reveal that the transport gap for quantum capacitance is smaller than that in conductance measurements due to the presence of localized states near the band edge. The presence of localized states is confirmed by the variable range hopping seen in our temperature dependence conductivity. A large asymmetry is observed between the electron and hole side. This asymmetric nature is attributed to the anisotropic band dispersion of BP. Our measurements establish the uniqueness of quantum capacitance in probing the localized states near the band edge, hitherto not seen in conductance measurements.

Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler

Depth profiles of carrier concentrations in GaMnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).