Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode

A novel composite InxGa1-xAs/GaAs/GaAs/AlxGa1-xAs multiple quantum well material with different well widths was studied as a new kind of photoelectrode in a photoelectrochemical cell. The photocurrent spectrum and photocurrent-electrode potential curve were measured in ferrocene nonaqueous solution. Pronounced quantization effects and strong exciton absorption were observed in the photocurrent spectrum. The effects of surface states and interfacial states on the photocurrent-electrode potential curve are discussed. (C) 2000 Elsevier Science S.A. All rights reserved.

Photoluminescence studies of type-II self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on (311)A GaAs substrate

We investigated the photoluminescence (PL) of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots (QDs) grown on (311)A GaAs substrate. The PL peak at 10 K shifts to lower energy by about 30 meV when the excitation power decreases by two orders of magnitude. It has a red-shift under pressure, that is the character of X-like transition. Moreover, its peak energy is smaller than the indirect gap of bulk Al0.5Ga0.5As and In0.55Al0.45As. We then attribute that peak to the type-II transition between electrons in X valley of Al0.5Ga0.5As and heavy holes in In0.55Al0.45As QDs. A new peak appears at the higher energy when temperature is increased above 70 K. It shifts to higher energy with increasing pressure, corresponding to the transition from conduction Gamma band to valence band in QDs. The measurements demonstrate that our In0.55Al0.45As/Al0.5Ga0.5As quantum dots are type-II QDs with X-like conduction-band minimum. To interpret the second X-related peak emerged under pressure, we discuss the X-valley split in QDs briefly. (C) 2000 American Institute of Physics. [S0003-6951(00)04622-2].

Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size

The pressure behaviour of In0.55Al0.45As/Al0.5Ga0.5As self-assembled quantum dots (QDs) has been studied at 15 K in the pressure range of 0-1.3 GPa. The atomic force microscopy image shows that the QDs have a multi-modal distribution in size. Three emission peaks were observed in the photoluminescence (PL) spectra, corresponding to the different QD families. The measured pressure coefficients are 82, 93 and 98 meV GPa(-1) for QDs with average lateral size of 26, 52 and 62 nm, respectively. The pressure coefficient of small QDs is about 17% smaller than that of bulk In0.55Al0.45As An envelope-function calculation was used to analyse the effect of pressure-induced change of barrier height, effective mass and dot size on the pressure coefficients of QDs. The Gamma-X state mixing was also included in the evaluation of the reduction of the pressure coefficients. The results indicate that both the pressure-induced increase of effective mass and Gamma-X mixing respond to the decrease of pressure coefficients, and the Gamma-X mixing is more important for small dots. The calculated Gamma-X interaction potentials are 15 and 10 meV for QDs with lateral size of 26 and 52 nm, respectively. A type-II alignment for the X conduction band is suggested according to the pressure dependence of the PL intensities. The valence-band offset was then estimated as 0.15 +/- 0.02.

Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers

We have investigated the temperature and excitation power dependence of photoluminescence properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As quantum wells. The temperature evolutions of the lower-and higher-energy transition in the photoluminescence spectra have been observed. The striking result is that a higher-energy peak appears at 105 K and its relative intensity increases with temperature in the 105-291 K range. We demonstrate that the higher-energy peak corresponds to the excited-state transition involving the bound-electron state of quantum dots and the two-dimensional hole continuum of wetting layer. At higher temperature, the carrier transition associated with the wetting layer dominates the photoluminescence spectra. A thermalization model is given to explain the process of hole thermal transfer between wetting layer and quantum dots. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

Photoluminescence study of multilayer In0.55Al0.45As/Al0.5Ga0.5As quantum dot at various temperature

The photoluminescence of self-assembled multilayer In0.55Al0.45As/Al0.5Ga0.5As quantum dot (QD) was measured at various temperatures. Strong photoluminescence of wetting layer (WL) and quantum dots were observed at the same time. Furthermore, direct excitons thermal transfer process between the wetting layer and quantum dots was observed. In the study of temperature dependence of PL intensity it was found that the PL peak of wetting layer contains two quenching processes: at low temperature, excitons are thermally activated from localized states to extended two-dimensional states and then trapped by QDs; at high temperature excitons quench through the X valley of barriers. Using rate equation excitons thermal transfer and quenching processes were analyzed quantitatively.

Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD

Al0.3Ga0.7N/AlN/GaN HEMT structures with significantly high mobility have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. At room temperature (RT) a Hall mobility of 2104 cm(2)/Vs and a two-dimensional electron gas (2DEG) density of 1.1x10(13) cm(-2) are achieved, corresponding to a sheet resistance of 277.8 Omega/sq. The elimination of V-shaped defects were observed on Al0.3Ga0.7N/AlN/GaN HEMT structures and correlated with the increase of 2DEG mobility. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

Micro-fabricated Al0.3Ga0.7As pyramids for potential SPM applications

A novel technique of manufacturing Al0.3Ga0.7As pyramids by liquid phase epitaxy (LPE) for scanning probe microscopy (SPM) sensors is reported Four meticulously designed conditions-partial oxidation, deficient solute, air quenching and germanium doping result in defect-free homogeneous nucleation and subsequent pyramid formation. Micrometer-sized frustums and pyramids are detected by scanning electron microscopy (SEM). The sharp end of the microtip has a radius of curvature smaller than 50 nm. It is believed that such accomplishments would contribute not only to crystal growth theory, but also to miniature fabrication technology.

RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE

The lattice damage accumulation in GaAs and Al0.3Ga0.7As/GaAs superlattices by 1 MeV Si+ irradiation at room temperature and 350-degrees-C has been studied. For irradiations at 350-degrees-C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10(15) Si/cm2 for GaAs, and is 5 x 10(15) Si/cm2 for Al0.8Ga0.7As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350-degrees-C. The damage accumulation rate for 1 MeV Si ion implantation in Al0.3Ga0.7As/GaAs superlattice is less than that in GaAs.

Optical properties of delta-doped GaAs and GaAs/Al0.1Ga0.9As superlattices

Radiative transition in delta-doped GaAs superlattices with and without Al0.1Ga0.9As barriers is investigated by using photoluminescence at low temperatures. The experimental results show that the transition mechanism of delta-doped superlattices is very different from that of ordinary superlattices. Emission intensity of the transition from the electron first excited state to hole states is obviously stronger than that from the electron ground state to hole states due to larger overlap integral between wavefunctions of electrons in the first excited state and hole states. Based on the effective mass theory we have calculated the self-consistent potentials, optical transition matrix elements and photoluminescence spectra for two different samples. By using this model we can explain the main optical characteristics measured. Moreover, after taking into account the bandgap renormalization energy, good agreement between experiment and theory is obtained.

Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots

The photoluminescence (PL) of In0.55Al0.45As/Al0.5Ga0.5As self-assembled quantum dots has been measured at 15 and 80 K under hydrostatic pressure. The lateral size of the dots ranges from 7 to 62 nm. The emissions from the dots with 26, 52 and 62 nm size have a blue shift under pressure, indicating that these quantum dots have the normal type-I structure with lowest conduction band at the Gamma -valley. However, the PL peak of dots with 7 nm diameter moves to lower energy with increasing pressure. It is a typical character for the X-related transition. Then these small dots have a type-II structure with the X-valley as the lowest conduction level. An envelope-function calculation confirms that the Gamma -like exciton transition energy will rise above the X-like transition energy in the In0.55Al0.45As/Al0.5Ga0.5As structure if the dot size is small enough.

Crystallographic and electrochemical characteristics of La0.7Mg0.3Ni3.5-x (Al0.5Mo0.5)(x) (x=0-0.8) hydrogen storage alloys

The crystal structure, hydrogen storage property and electrochemical characteristics of the La0.7Mg0.3Ni3.5-x(Al0.5Mo0.5), (x=0-0.8) alloys have been investigated systematically. It can be found that with X-ray powder diffraction and Rietveld analysis the alloys are of multiphase alloy and consisted of impurity LaNi phase and two main crystallographic phases, namely the La(La, Mg)(2)Ni-9 phase and the LaNi5 phase, and the lattice parameter and the cell volume of both the La(La, Mg)(2)Ni-9 phase and the LaNi5 phase increases with increasing A] and Mo content in the alloys. The P-C isotherms curves indicate that the hydrogen storage capacity of the alloy first increases and then decreases with increasing x, and the equilibrium pressure decreases with increasing x. The electrochemical measurements show that the maximum discharge capacity first increases from 354.2 (v = 0) to 397.6 mAh g(-1) (x = 0.6) and then decreases to 370.4 mAh g(-1) (x= 0.8). The high-rate dischargeability of the alloy electrode increases lineally from 55.7% (x=0) to 73.8% (x=0.8) at the discharge current density of 1200 mA g(-1). Moreover, the exchange current density of the alloy electrodes also increases monotonously with increasing x.

High-energy transitions of shallow magnetodonors in a GaAs/Al0.3Ga0.7As multiple quantum well

The high-energy states of a shallow donor in a GaAs/Ga0.7Al0.3As multiple-quantum-well structure subjected to a magnetic field in the growth direction are studied both theoretically and experimentally. Effects due to higher confinement subbands as well as due to the electron-phonon interaction are investigated. We show that most of the peaks in the infrared photoconductivity spectrum are due to direct transitions from the ground state to the m = +/-1 magnetodonor states associated with the first subband, but transitions to the m = +/-1 states of the third subband are also apparent. The remaining photoconductivity peaks are explained by phonon-assisted impurity transitions.

New Data on Welshite, e.g. Ca2Mg3.8Mn0.62+Fe0.12+Sb1.55+O2 [Si2.8Be1.7Fe0.653+Al0.7As0.17O18], an Aenigmatite-Group Mineral

Electron and ion microprobe data on two samples of welshite from the type locality of Langban, Sweden, gave analytical totals of 99.38-99.57 wt.% and BeO contents of 4.82-5.11 wt.%, corresponding to 1.692-1.773 Be/20 O. Mossbauer and optical spectra of one of these samples gave Fe-[iv](3+)/Sigma Fe = 0.91, Fe-[iv](2+)/Sigma Fe = 0.09, and no evidence of Mn3+. The resulting formula for this sample is Ca2Mg3.8Mn0.62+Fe0.12+Sb1.55+O2[Si2.8Be1.7Fe0.653+Al0.7As0.17O18], and that for the second sample, Ca2Mg3.8Mn0.12+Fe0.12+F0.83+Sb1.25+O2[Si2.8Be1.8F0.653+Al0.25As0.25O18], is related by the substitution involving tetrahedral and octahedral sites: 0.59([vi,iv])(Fe,Al)(3+) approximate to 0.42([vi])(Mg,Mn,Fe)(2+) + 0.21(Sb-[vi],As-[iv])(5+), i.e. 3([vi,iv]) M3+ = 2([vi])M(2+) + M-[vi,iv](5+). WelShite is distinctive among aenigmatite-group minerals in the high proportion of Fe 3+ in tetrahedral coordination and is unique in its Be content, substantially exceeding 1Be per formula unit. Given the cation distributions in other minerals related to aenigmatite, we think it is reasonable to assume that at least one tetrahedral site is >50% occupied by Be and that one octahedral site is >50% occupied by Sb, so that welshite should be retained as a distinct species with its own name in the aenigmatite group.

A vibrational spectroscopic study of the phosphate mineral zanazziite - Ca2(MgFe2+)(MgFe2+Al)4Be4(PO4)6⋅6(H2O)

Zanazziite is the magnesium member of a complex beryllium calcium phosphate mineral group named roscherite. The studied samples were collected from the Ponte do Piauí mine, located in Itinga, Minas Gerais. The mineral was studied by electron microprobe, Raman and infrared spectroscopy. The chemical formula can be expressed as Ca2.00(Mg3.15,Fe0.78,Mn0.16,Zn0.01,Al0.26,Ca0.14)Be4.00(PO4)6.09(OH)4.00⋅5.69(H2O) and shows an intermediate member of the zanazziite–greinfeinstenite series, with predominance of zanazziite member. The molecular structure of the mineral zanazziite has been determined using a combination of Raman and infrared spectroscopy. A very intense Raman band at 970 cm−1 is assigned to the phosphate symmetric stretching mode whilst the Raman bands at 1007, 1047, 1064 and 1096 cm−1 are attributed to the phosphate antisymmetric stretching mode. The infrared spectrum is broad and the antisymmetric stretching bands are prominent. Raman bands at 559, 568, 589 cm−1 are assigned to the ν4 out of plane bending modes of the PO4 and HPO4 units. The observation of multiple bands supports the concept that the symmetry of the phosphate unit in the zanazziite structure is reduced in symmetry. Raman bands at 3437 and 3447 cm−1 are attributed to the OH stretching vibrations; Raman bands at 3098 and 3256 are attributed to water stretching vibrations. The width and complexity of the infrared spectral profile in contrast to the well resolved Raman spectra, proves that the pegmatitic phosphates are better studied with Raman spectroscopy.

Assessment of the molecular structure of natrodufrénite – NaFe2+Fe3+5(PO4)4(OH)6•2(H2O), a secondary pegmatite phosphate mineral from Minas Gerais, Brazil

The mineral natrodufrénite a secondary pegmatite phosphate mineral from Minas Gerais, Brazil, has been studied by a combination of scanning electron microscopy and vibrational spectroscopic techniques. Electron probe analysis shows the formula of the studied mineral as (Na0.88Ca0.12)∑1.00(Mn0.11Mg0.08Ca0.04Zr0.01Cu0.01)∑0.97(Al0.02)∑4.91(PO4)3.96(OH6.15F0.07)6.22⋅2.05(H2O). Raman spectroscopy identifies an intense peak at 1003 cm−1 assigned to the ν1 symmetric stretching mode. Raman bands are observed at 1059 and 1118 cm−1 and are attributed to the ν3 antisymmetric stretching vibrations. A comparison is made with the spectral data of other hydrate hydroxy phosphate minerals including cyrilovite and wardite. Raman bands at 560, 582, 619 and 668 cm−1 are assigned to the ν4 bending modes and Raman bands at 425, 444, 477 and 507 cm−1 are due to the ν2 bending modes. Raman bands in the 2600–3800 cm−1 spectral range are attributed to water and OH stretching vibrations. Vibrational spectroscopy enables aspects of the molecular structure of natrodufrénite to be assessed.