Diário da Constituinte [gravação de vídeo] : [programa n. 331]

Tem início a sessão da Constituinte para discutir o novo regimento interno. No Plenário, o número de Parlamentares presentes mostrava que nenhuma proposta teria 280 votos. Na presidência da Assembleia Nacional Constituinte (ANC), o vice-presidente, o Senador Mauro Benevides (PMDB-CE), que substitui o Deputado Ulysses Guimarães (PMDB-SP), no momento ocupando a Presidência da República. O Deputado Alysson Paulinelli (PFL-MG) acredita que a votação será suficiente para ser aprovada a modificação viabilizando alguns itens que não estão compatíveis com o desejo da maioria do Congresso e do povo brasileiro. Mas o líder do PMDB, o Senador Fernando Henrique Cardoso (PMDB-SP), propôs o adiamento da sessão para conseguir um acordo. O Centrão se dividiu. O líder do PDS, o Deputado Amaral Netto (PDS-RJ), chega a disputar o microfone com outro líder do Centrão, O Deputado Roberto Cardoso Alves (PMDB-SP). Mas a palavra de conciliação surgiu através do líder do PTB, o Deputado Gastone Righi (PTB-SP). Os líderes decidem que o melhor dia para nova votação é na quarta-feira da próxima semana e com isso, a sessão foi adiada. O Deputado José Maria Eymael (PDC-SP) afirma que o momento é de entendimento, que atenda os anseios de toda sociedade representada na ANC. O Lider do PC do B, Deputado Haroldo Lima (PCdoB-BA) concordou com o adiamento para promover uma votação mais adequada. O Deputado Gastone Righi (PTB-SP) declara que para demonstrar que o centro democrático, a maioria real da Constituinte, não deseja confrontos, mas colaborar para uma Constituição nova que seja perene e coerente, o grupo concordou em adiar a votação. O Senador Fernando Henrique Cardoso (PMDB-SP) declara que após o Centrão atender ao seu pedido de adiamento da sessão, será realizado um trabalho de aprovação de medidas do regimento que viabilize uma votação mais célere e expresse realmente a vontade de todos. O Presidente Ulysses Guimarães (PMDB-SP) recebeu no Palácio do Planalto um dos líderes do Centrão, o Deputado Roberto Cardoso Alves (PMDB-SP), que encaminhava as decisões tomadas no Congresso. O Deputado José Costa (PMDB-AL) considera fundamental a constatação que nenhum grupo tem 280 votos para decidir qualquer matéria constitucional e que será através da negociação que será elaborada a Constituição, equacionando diversos temas. A Comissão Executiva do PFL se reuniu na busca de um acordo para votação da próxima semana no gabinete do presidente do partido, o Senador Marco Maciel (PFL-PE). O PFL está examinando também as propostas polêmicas que ainda serão votadas no Plenário da Constituinte. Outro tema em discussão é a proposta do Senador Carlos Chiarelli (PFL-RS), que deseja eleições gerais no país após a promulgação da Constituição.

The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates

Self-aligned InAs quantum wires (QWRs) or three-dimensional (3D) islands are fabricated on GaAs(331)A substrates by molecular beam epitaxy (MBE). InAs QWRs are selectively grown on the step edges formed by GaAs layers. The surface morphology of InAs nanostructures is carefully investigated by atomic force microscopy (AFM) measurements. Different growth conditions, such as substrate temperature, growth approaches, and InAs coverage, exert a great effect on the morphology of InAs islands. Low substrate temperatures favour the formation of wirelike nanostructures, while high substrate temperatures favour 3D islands. The shape transition is attributed to the trade-off between surface energy and strain energy. A qualitative agreement of our experimental data with the theoretical results derived from the model proposed by Tersoff and Tromp is achieved.

Surface morphology control of strained InAs/GaAs(331)A films: From nanowires to island-pit pairs

We have studied the effect of molecular beam epitaxy growth conditions on the surface morphology of strained InAs/GaAs(331)A films. Our results reveal that InAs nanowires aligned along the [1 (1) over bar0] direction are formed under As-rich conditions, which is explained by the effect of anisotropic buffer layer surface roughing. Under In-rich conditions, however, the surface morphology of the InAs layers is characterized by a feature of island-pit pairs. In this case, cooperative nucleation of islands and pits can lower the activation barrier for domain growth. These results suggest that the surface morphology of strained InAs layers is highly controllable. (C) 2005 American Institute of Physics.

Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires

Morphology evolution of high-index GaAs(331)A surfaces during molecular beam epitaxy (MBE) growth has been investigated in order to achieve regularly distributed step-array templates and fabricate spatially ordered low-dimensional nano-structures. Atomic force microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature. By using the step arrays formed on GaAs(331)A surfaces as the templates, we have fabricated highly ordered InGaAs nanowires. The improved homogeneity and the increased density of the InGaAs nanowires are attributed to the modulated strain field caused by vertical multi-stacking, as well as the effect of corrugated surface of the template. Photoluminescence (PL) tests confirmed remarkable polarization anisotropy.

Self-organized InAs quantum wires on GaAs (331)A substrates

Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs QWRs was saturated by the terrace width (i.e., 90 nm) while the size along the step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7.9 nm to 13 nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.

Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires

Morphology evolution of high-index (331)A surfaces during molecular beam epitaxy (MBE) growth have been investigated in order to uncover their unique physic properties and fabricate spatially ordered low dimensional nanostructures. Atomic Force Microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature in conventional MBE. However, this situation is reversed in atomic hydrogen-assisted MBE, indicating that step bunching is partly suppressed. We attribute this to the reduced surface migration length of Ga adatoms with atomic hydrogen. By using the step arrays formed on GaAs (331)A surfaces as the templates, we fabricated laterally ordered InGaAs self-aligned nanowires.

Surface morphology evolution of strained InAs/GaAs(331)a films

Surface morphology evolution of strained InAs/GaAs(331)A films was systematically investigated in this paper. Under As-rich conditions, InAs elongated islands aligned along [1 (1) over bar0] are formed at a substrate temperature of 510 degrees C. We explained it as a result of the anisotropic diffusion of adatoms. Under In-rich conditions, striking change has occurred with respect to the surface morphology of the InAs layers. Instead of anisotropic InAs elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. Using cooperative nucleation mechanisms proposed by Jesson et al. [Phys. Rev. Lett. 77, 1330 (1996)], we interpret the resulting surface morphology evolution.

Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)

Step like morphology of (331)A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of GaAs layers increase monotonically with increasing substrate temperatures. The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates. And, in atomic hydrogen assisted MBE, the terrace width reduces and density increases when depositing the same amount of GaAs. It attributes this to the reduced surface migration length of Ga adatoms with atomic hydrogen. Laterally ordered InAs self-aligned nano-wires were grown on GaAs (331)A surfaces and its optical polarization properties were revealed by photoluminescence measurements.

GaAs(331)A面InAs自组织纳米结构形貌演化

采用分子束外延方法在CaAs(331)A高指数衬底上制备自对齐InAs纳米线(QWRs)或者三维(3D)岛状结构.InAs纳米线(QWRs)选择性生长在CaAs层的台阶边缘.通过原子力显微镜(AfM)仔细研究了InAs纳米微结构的表面形貌,发现不同的生长条件,包括:衬底温度、生长速率、和InAs层厚度等,对InAa表面形貌有很大的影响.如,低温更容易导致线状纳米微结构的形成,而高温更利于3D岛状结构形成.表面形貌的转变归结于表面能同应变能之间的竞争.