Quantum computation with coupled quantum dots embedded in optical microcavities

Based on an idea that spatial separation of charge states can enhance quantum coherence, we propose a scheme for a quantum computation with the quantum bit (qubit) constructed from two coupled quantum dots. Quantum information is stored in the electron-hole pair state with the electron and hole located in different dots, which enables the qubit state to be very long-lived. Universal quantum gates involving any pair of qubits are realized by coupling the quantum dots through the cavity photon which is a hopeful candidate for the transfer of long-range information. The operation analysis is carried out by estimating the gate time versus the decoherence time.

Fine structure of the plasmon resonance absorption peak of Ag nanoparticles embedded in partially oxidized Si matrix

Ag/Si nanocomposite films were prepared by the radio-frequency magnetron cosputtering method. The fine structure of the plasmon resonance absorption peak was found in film samples. X-ray photoelectron spectroscopy analysis indicated that the samples were composed of a two-layer structure, which accounted for the structure of the optical absorption spectra. The peak located near 445 nm is the plasmon resonance absorption peak of Ag nanoparticles embedded in a partially oxidized Si matrix. Its intensity decreases with decreasing film thickness and disappears in a very thin sample. The peak located near 380 nm originates from the plasmon resonance absorption of the thoroughly oxidized surface layer of the sample. Its intensity does not change with increasing thickness, but it cannot be observed in the very thick sample. (C) 2001 American Institute of Physics.

Raman scattering of nanocrystalline silicon embedded in SiO2

Raman scattering of nanocrystalline silicon embedded in SiO2 matrix is systematically investigated. It is found that the Raman spectra can be well fitted by 5 Lorentzian lines in the Raman shift range of 100-600 cm(-1). The two-phonon scattering is also observed in the range of 600-1100 cm(-1) The experimental results indicate that the silicon crystallites in the films consist of nanocrystalline phase and amorphous phase; both can contribute to the Raman scattering. Besides the red-shift of the first order optical phonon modes with the decreasing size of silicon nanocrystallites, we have also found an enhancement effect on the second order Raman scattering, and the size effect on their Raman shift.

Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix

Nanocrystalline silicon (nc-Si) embedded SiO2 matrix has been formed by annealing the SiOx films fabricated by plasma-enhanced chemical vapor deposition (PECVD) technique. Absorption coefficient and photoluminescence of the films have been measured at room temperature. The experimental results show that there is an "aUrbach-like" b exponential absorption in the spectral range of 2.0-3.0 eV. The relationship of (alpha hv)(1/2) proportional to(hv - E-g) demonstrates that the luminescent nc-Si have an indirect band structure. The existence of Stokes shift between photoluminescence and absorption edge indicates that radiative combination can take place not only between electron states and hole states but also between shallow trap states of electrons and holes. (C) 2000 Elsevier Science B.V. All rights reserved.

Optical properties of nanocrystalline silicon embedded in SiO2

Nanocrystalline silicon embedded SiO2 matrix has been formed by annealing the a-SiOx films fabricated by plasma enhanced chemical vapor deposition technique. Absorption and photoluminescence spectra of, the films have been studied in conjunction with micro-Raman scattering spectra. It is found that absorption presents an exponential dependence of absorption coefficient to photon energy in the range of 1.5-3.0 eV, and a sub-band appears in the range of 1.0-1.5 eV. The exponential absorption is due to the indirect band-to-band transition of electrons in silicon nanocrystallites, while the sub-band absorption is ascribed to transitions between surfaces and/or defect states of the silicon nanocrystallites. The existence of Stokes shift between absorption and photoluminescence suggests that the phonon-assisted luminescence would he enhanced due to the quantum confinement effects.

Photoluminescence from Ge clusters embedded in porous silicon

Visible photoluminescence (PL) and Raman spectra of Ge clusters embedded in porous silicon (PS) have been studied. The as-prepared sample shows redshifted and enhanced room temperature PL relative to reference PS. This result can be explained by the quantum confinement effect on excitons in Ge clusters and tunnel of excitons from Si units of the PS skeleton to Ge clusters. One year storage in dry air results in a pronounced decrease in PL intensity but blue-shifted in contrast to reference PS. This phenomenon correlates to the size decrease of macerated Ce clusters and occurrence of "quantum depletion" in Ge clusters. Consequently, only excitons in Si units contribute to PL. (C) 1998 American Institute of Physics.

An Embedded Ultra Low Power Nonvolatile Memory in a Standard CMOS Logic Process

This paper proposes an embedded ultra low power nonvolatile memory in a standard CMOS logic process. The memory adopts a bit cell based on the differential floating gate PMOS structure and a novel operating scheme. It can greatly improve the endurance and retention characteristic and make the area/bit smaller. A new high efficiency all-PMOS charge pump is designed to reduce the power consumption and to increase the power efficiency. It eliminates the body effect and can generate higher output voltage than conventional structures for a same stage number. A 32-bit prototype chip is fabricated in a 0.18 mu m 1P4M standard CMOS logic process and the core area is 0.06 mm(2). The measured results indicate that the typical write/erase time is 10ms. With a 700 kHz clock frequency, power consumption of the whole memory is 2.3 mu A for program and 1.2 mu A for read at a 1.6V power supply.

Photoluminescence mechanism of Si nanocrystals embedded in SiO2 matrix

The interface state recombination effect from the quantum confinement effect in PL signals from the SRO material system was studied. The results show that the larger the size of Si NCs, the more beneficial for the interface state recombination process to surpass the quantum confinement process, in support of Qin's model.

Performance of an embedded optical vector matrix multiplication processor architecture

An embedded architecture of optical vector matrix multiplier (OVMM) is presented. The embedded architecture is aimed at optimising the data flow of vector matrix multiplier (VMM) to promote its performance. Data dependence is discussed when the OVMM is connected to a cluster system. A simulator is built to analyse the performance according to the architecture. According to the simulation, Amdahl's law is used to analyse the hybrid opto-electronic system. It is found that the electronic part and its interaction with optical part form the bottleneck of system.

基于Linux的USB驱动程序实现

由于Linux良好的开放性和USB总线极佳的通用性 ,USB设备在Linux操作系统中得到了广泛的应用。文中首先介绍Linux驱动程序的架构 ,然后介绍USB设备 ,重点说明USB驱动程序的实现

Linux内核的实时支持的研究与实现

目前嵌入式计算的发展对实时多任务操作系统（RTOS）的需求日益迫切，而Linux内核的实时支持研究为迎合这种需求提供了新的可能性，通过从中断控制、实时调度策略、内核抢占机制及细粒度定时器几方面深入研究与实现了Linux内核的实时支持，以使之成为一个较为完善的RTOS。通过把实时部分设计为可配置的单元，以保留Linux原有系统支持及API。另外，为扩展系统适用范围，提出了可支持多实时调度策略的二阶段调度方案，同时指出了当前方案的不足和今后的研究方向。

基于Linux的网络计算机服务器的设计与实现

由于Linux在电子政务,企业,教育等等方面的推广应用,为网络计算机(NC)提供Linux上的各种应用服务的需求日益迫切,在Linux上实现网络计算机服务器(NCS)可以满足这种需求。文章通过从用户会话管理,Linux应用服务的输入输出传输,图像像素的压缩编码方式,及对不同NC运行环境的自适应性及系统安全配置几个关键方面深入研究与实现了Linux上的网络计算机服务器,使网络服务器能够为NC提供可用的应用服务。NCS为X客户程序的X服务器,目前已有的Linux应用可以不需修改为NC提供服务。另外,为提高系统的适应范围,提出了在会话服务中加入针对NC运行环境和网络属性的反馈式(Feedback)适应策略。文章最后指出了当前方案的不足和今后的研究方向。

虚拟硬件方法实现基于Intel StrongARM SA-1110平台的Linux APM

文章讨论了在StrongARM SA－1110开发板上实现Linux APM的主要技术问题。在分析了Intel StrongARM最新处理器SA－1110及开发板（Assabet）与电源管理相关的结构和特性的基础上，提出了一种基于虚拟硬件的系统跨平台移植的方法和思路，并以实际开发过程中的经验为背景，介绍了在Linux APM基于SA－1110平台的移植工作中虚拟硬件方法的应用和虚拟硬件方法在操作系统跨平台移植开发上的优点。